TSOP05 Search Results

56-PIN

Abstract: LH28F008SA LH28F016SA
Contextual Info: LH28F016SA FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 3/5 1 56 CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.43 MB/sec Write Transfer Rate

A18E

Abstract: gsm internet modem circuit TSOP056-P-1420
Contextual Info: SHARP LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH 28F16S3-L/S3H -L flash • High performance read access time m em ories with Sm art 3 technology are high-density, low-cost,

TSOP056-P-1420

Abstract: LH28F160S5X-L70 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70
Contextual Info: LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

MN41V17405BTT

Abstract: TSOP050-P MN4SV17160T MN4SV17 MN4SV17160T-A
Contextual Info: MOS Memories •Dynamic RAMs # 16M DRAMs 3.3V version Organization (words Xbits) 4M X4 1M X 16 Type No. Access time Cycle time Refresh max (ns) min (ns) (cycles/ms) Maximum Supply Current CBR self Active refresh (mA) (/*A) Package No. Remarks MN41V17400BTT

MN4117400BSJ

Abstract: MN4117405BSJ MN4117405-BSJ 4117405BTT 4117400BTT 4117400b 4117405BSJ 4117405
Contextual Info: MOS Memories • Dynamic RAMs # 16M DRAM s 5V version Maximum Supply Current Organization Access time max (ns) Cycle time min (ns) Refresh (cycles/ms) M N4116400BTT 50/60/70 90/110/130 4096/64 80/70/60 - TSOP026-P-0300B M24 Fast page mode M N4117400BSJ 50/60/70

CSP-64

Abstract: TSOP056-P-1420 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70
Contextual Info: LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

Contextual Info: CMOS 16M 2M x 8 /1 M x 16 MROM FEATURES • 2,097,152 x 8 bit organization (Byte mode: BŸTË = V,L) 1,048,576 x 16 bit organization (Word mode: BYTE = V,H) PIN CONNECTIONS 5 6 -PIN TSO P TOP VIEW • Access time: 120 ns (MAX.) • Supply current: -O p e ra tin g : 35 mA (MAX.)

56-PIN

Abstract: LH28F400SU-NC NC6016
Contextual Info: LH28F400SU-NC FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V VPP – No Requirement for DC/DC Converter to Write/Erase • 60 ns Maximum Access Time (VCC = 5.0 V ± 0.25 V) • 80ns Maximum Access Time (VCC = 5.0 V ± 0.5 V)

CSR application

Abstract: 56-PIN LH28F400SU-LC 48-pin TSOP 28F400
Contextual Info: LH28F400SU-LC FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V VPP, 3.3 V VCC – No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) • Minimum 2.7 V Read Capability

56-PIN

Abstract: LH28F320S3TD-L10 TSOP056-P-1420
Contextual Info: SHARP LH28F320S3TD-L10 LH28F320S3TD-L10 32 M-bit 2 MB x 8/1 MB x 16 x 2-Bank Smart 3 Dual Work Flash Memory DESCRIPTION The LH28F320S3TD-L10 Dual W ork flash memory • Scalable Command Set (SCS) with Smart 3 technology is a high-density, low-cost, • High performance read access time

Contextual Info: Thin Small Outline Package TSOP DIP Adapters ACCUTEK MICROCIRCUIT CORPORATION DIP ADAPTER MODULES ELIMINATE THE NEED TO REDESIGN MOTHERBOARDS OR MAY BE USED FOR BREADBOARD PROTOTYPING DESCRIPTION This new family of Accutek DIP Adapter Modules converts surface

56-PIN

Abstract: LH28F008SA LH28F800SU TSOP056-P-1420 LH28F800SUT
Contextual Info: LH28F800SU FEATURES • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V VCC • 5 V Write/Erase Operations 5 V VPP – No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time • Minimum 2.7 V Read capability

26F004SU

Contextual Info: LH28F400SU-LC FEATURES 4M 512K x 8 ,256K x 16 Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V Vpp, 3.3 V Vcc) - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time

Contextual Info: C M O S FEATURES • 2,097,152 x 8 bit organization Byte mode: BYTE = V,L 1,048,576 x 16 bit organization (Word mode: BYTE = V,H) • Access time: 120 ns (MAX.) • Supply current: - Operating: 35 mA (MAX.) - Standby: 30 (iA (MAX.) • Three-state output

Contextual Info: LH53FV16P00A FEATURES • 2,097,152 x 8 bit organization Byte mode: BYTE = VIL 1,048,576 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 120 ns (MAX.) • Supply current: – Operating: 35 mA (MAX.) – Standby: 30 µA (MAX.) CMOS 16M (2M × 8/1M × 16) MROM

56-PIN

Abstract: LH28F008SA LH28F016SU
Contextual Info: LH28F016SU FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation 3/5 1 56 WP CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.32 MB/sec Write Transfer Rate A20 4 53 RY/BY A19

16M-DRAM

Abstract: n4217 16MDRAM TSOP050-P-04COA
Contextual Info: MOS MEMORIES • 16MDRAM 5V version, CBR self refresh operation Organi­ zation (words X bits) Type No. Access time max. (ns) Cycle time min, (ns) Refresh (cydes/ms) Supply voltage: 4.5 ~ 5 .5 V Maximum Supply Current Active (mA) Standby Package Remarks

Contextual Info: Panasonic 64Mbit Synchronous DRAM • ■ DESCRIPTIONS MN4SV64040A/MN4SV64080A/MN4SV64041A/MN4SV64081A is 64Mbit synchronous dynamic random access memory, organized as 4,194,304 word x 4 bit x 4 bank MN4SV64040A/MN4SV64041A 2,097,152 word x 8 bit x 4 bank (MN4SV64080A/MN4SV64081A)

MN4117400ASJ

Abstract: MN4118165 MN4117400 MN41174 MN411 MN4118160 SOJ026-P-0300 MN4117
Contextual Info: MOS Memories • 16MDRAM 5V version Organi­ zation (words X bits) 16M XI 4M X4 1M X16 Type No. Supply voltage: 4.5 ~ 5 .5 V Access time max. (ns) Cycle time min. (ns) Refresh (cycles/ms) Maximum Supply Current Active (mA) Standby Package Remarks No. (MA)

a13c

Abstract: F0006
Contextual Info: 8M 512K x 1 6 ,1M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 5 V Write/Erase Operations (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time

Contextual Info: CMOS 8M 1M X 8 MROM FEATURES • 1,048,576 x 8 bit organization (Byte mode: BYTE = V,L) 524,288 x 16 bit organization (Word mode: BYTE = V,H) • Access time: 120 ns (MAX.) • Supply current: - Operating: 35 mA (MAX.) - Standby: 30 (iA (MAX.) • Three-state output

Contextual Info: LH28F400SU-NC FEATURES 4M 512K x 8, 256K x 16 Flash Memory 56-PIN TSOP • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 60 ns Maximum Access Time (Vcc = 5.0 V ±0.25 V)

gsm internet modem circuit

Abstract: S3H-L TSOP056-P-1420
Contextual Info: LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

A12E1

Abstract: 11DQ3 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70 TSOP056-P-1420 11DQ5
Contextual Info: SHARP LH28F160S5-L/S5H-L LH28F160S5-L7S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F160S 5-L/S5H -L flash m em ories with Sm art 5 technology are high-density, low-cost,