TSOP-6 S22 Search Results

Si3483DV

Contextual Info: Si3483DV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = -10 V -6.2 0.053 @ VGS = -4.5 V - 5.0 APPLICATIONS D Load Switch -30 TSOP-6 Top View 1 (4) S 6 (3) G

Si3433BVD

Contextual Info: Si3433BVD New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.042 @ VGS = -4.5 V -5.6 0.057 @ VGS = -2.5 V - 4.8 0.080 @ VGS = -1.8 V - 4.1 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm

IRLTS6342TRPBF

Abstract: IRLTS6342 m4570 irlts6342tr irf5850
Contextual Info: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits

Contextual Info: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits

MD300-10A

Abstract: QFN tray tray datasheet bga SIP 400B TSOP TRAY 40 PIN BGA package tray 64 NEC A39A 240 TSOP package tray 6-tsop TRAY DIMENSIONS 132 PGA
Contextual Info: CHAPTER 4 CHAPTER 4 4.1 PACKING STYLES AND NOTES 4.1.1 Packing Styles 4.1.2 Notes on Handling 4.2 PACKING OF IC PACKAGES 4.2.1 List of Packing 1 DIP (2) SIP, V-DIP, ZIP (3) QUIP, Piggyback (4) PGA (5) SOP, SSOP (6) TSOP (I) (II) (7) QFP, QFP (FP) (8) SVP

CY62256V

Abstract: CY62256V-55RZC CY62256V-55SNC CY62256VL-55RZC CY62256VL-55SNC CY62256VLL-55SNC
Contextual Info: p n n CY62256V PRELIMINARY 32K x 8 Static RAM Features LO W output enable OE and thre e -sta te drivers. T his device has an au tom atic pow er-dow n feature, reducing the pow er con sum p tion by 98% w hen de selected. T he C Y 6 22 56V is in th e standard 4 5 0 -m il-w id e (300-m il body w idth) SO IC, TSOP,

C62256-4

Abstract: CY62256 CY62256-55 CY62256-55SNC CY62256-55ZRC CY62256-70 CY62256L-55SNC CY62256L-55ZRC CY62256LL-55SNC ZR28
Contextual Info: fax id: 1068 CY62256 32Kx8 Static RAM Features ou tput enable OE and three -state drivers. T his device has an au to m a tic pow er-dow n feature, reducing th e po w e r co n su m p ­ tion by 99 .9% w hen deselected. The C Y 6 22 56 is in the sta n ­ dard 4 5 0 -m il-w id e (300-m il body w idth) SO IC, TSOP, and

NEC A39A

Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Contextual Info: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES

21x21

Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
Contextual Info: 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］のダイアログ・ボックスが表示されます。 3. 検索したいパッケージのNECコードを入力して， 検索 F をクリックしてください。

MD300-10A

Abstract: P32C-100-600A p20d100 C-PGA176-S15U-2 CDIP28 LA-0543A tray bga P-TQFP100-14X20-0 0x20010 P14DH-100-300A2-1
Contextual Info: Find tool 1. Click button in the Toolbar. 2. Search dialog box is displayed. 3. Enter a NEC code to be searched and click Find . Caution Don't use the wild card *) when entering a NEC code. Ex.) Find Find What P22C-100-300A-1 Match Whole Word Only Match Case

4216100

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT r/iPD42S16100 ,4 2 1 6 1 0 0 ,4 2 S 1 7 1 0 0 ,4217100 16M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The juPD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the ¿¿PD42S16100, 42S17100 can execute CAS before RAS self refresh. They

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT riuPD42S16800L#4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION * The iiPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.

nec 28 pin

Abstract: 4217400-60 DGS22
Contextual Info: MOS INTEGRATED CIRCUIT f/¿PD42S16400 ,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T he ¿iPD42S 16400, 4216400, 42S17400, 4217400 are 4 194 304 w o rd s by 4 bits d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and the ¿¿PD42S16400, 42S17400 can execute CAS before RAS se lf refresh and

Cristal Controls

Abstract: STF202 STF202-22T1G 22T1G
Contextual Info: STF202-22T1G USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a

Analog devices marking Information

Abstract: computer mouse circuit diagram 2.4 WIRELESS USB on line ups circuit diagrams PC keyboard CIRCUIT diagram XTAL1 marking code ma 10 lead package analog devices keyboard ic DM1 marking code diode diode cross reference
Contextual Info: STF202-22 USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a

Contextual Info: bM27525 0042205 O ti HNECE MOS INTEGRATED CIR CU IT ¿ ¿ P D 4 2 S 1 6 8 0 0 ,4 2 S 1 7 8 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M ODE PRELIMINARY DESCRIPTION The NEC ¿¿PD42S16800 and /¿PD42S17800 are 2 097 152 words by 8 b it s dynamic CMOS RAM w ith o p tio n a l fa s t page mode.

Contextual Info: STF202-22T1G USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a

computer Network Types diagram file free down

Abstract: D2D marking code STF202 STF202-22
Contextual Info: STF202-22 USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a

computer Network Types diagram file free down

Abstract: STF202 STF202-22
Contextual Info: STF202-22 USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a

marking s22

Abstract: TSOP-6 S22
Contextual Info: STF202-22 USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a

Contextual Info: STF202-22T1G USB Filter with ESD Protection This device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a

Contextual Info: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N

PD42S

Contextual Info: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s