TSOP-6 MARKING 100 Search Results
TSOP-6 MARKING 100 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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TSOP-6 MARKING 100 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 7SB3257 Mux / Demux Bus Switch The 7SB3257 Mux / Demux Bus Switch is an advanced high−speed line switch in ultra−small footprint. Features MARKING DIAGRAMS 6 6 1 SOT−363/SC70−6/SC−88 DF SUFFIX CASE 419B AK MG G 1 6 A 6 1 B0 1 TSOP−6 DT SUFFIX CASE 318G |
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7SB3257 7SB3257 363/SC70â 613AD 613AE 613AF 7SB3257/D | |
Contextual Info: PRELIMINARY MICRON I TECHNOLOGY, 1 6 M l n b XAM INC. FEATURES 50-Pin TSOP V cc DQ0 DQ1 V ssQ DQ2 DQ3 V ccQ DQ4 DQ5 V ssQ DQ6 DQ7 V ccQ DQ M L W E# C AS# RAS# C S# BA A10 A0 A1 A2 A3 V cc MARKING 1M16 • Plastic Package - OCPL 50-pin TSOP 400 mil TG • Timing |
OCR Scan |
50-Pin MT48LC1M16A1TG-8A | |
Contextual Info: ADVANCE MT28SF002 256K x 8 FLASH MEMORY 256K x 8 S m artV o lta g e FEATURES 40-Pin TSOP Type I FB-1 A16 A15 A14 A13 A12 A11 A9 A8 WE RP V pp WP NC A7 A6 A5 A4 A3 A2 A1 MARKING • Tim ing (5V V cr/3.3V Vcc) 60ns/90ns access -6 80ns/110ns access -8 100ns/150ns access |
OCR Scan |
MT28SF002 100ns 110ns, 150ns 40-Pin 60ns/90ns | |
NUD3048
Abstract: NUD3048MT1 FET MARKING TSOP6 Marking Code 17
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NUD3048 NUD3048 NUD3048/D NUD3048MT1 FET MARKING TSOP6 Marking Code 17 | |
Contextual Info: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it |
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NUD3048 40E-05 20E-05 00E-05 80E-05 60E-05 | |
NUD3048
Abstract: NUD3048MT1 NUD3048MT1G
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NUD3048 NUD3048 NUD3048/D NUD3048MT1 NUD3048MT1G | |
MT8LSDT1664HG-10EB1
Abstract: PC133 registered reference design
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PC100, 144pin, 128MB 096-cycle MT8LSDT1664 MT8VR12818AG 512MB MT16VR25616AG MT16VR25618AG MT8LSDT1664HG-10EB1 PC133 registered reference design | |
MT8LSDT1664HG-10EB1
Abstract: SO-DIMM 144-pin
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PC100, 144pin, 128MB 096-cycle MT8LSDT1664 MT4VR6418AG 256MB MT8VR12816AG MT8LSDT1664HG-10EB1 SO-DIMM 144-pin | |
Contextual Info: P32M648YL, P64M6416YL P32M648YLE, P64M6416YLE SDRAM MODULE 32M, 64M x 64 DIMM PIN ASSIGNMENT Front View 168-Pin DIMM Features: • • • • • • • • • Intel PC-100/PC-133 Compatible JEDEC-standard 168-pin, dual in-line memory module (DIMM) TSOP components. |
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P32M648YL, P64M6416YL P32M648YLE, P64M6416YLE 168-Pin PC-100/PC-133 168-pin, 81us/row) 32Mx8 | |
MT4LSDT464HG-10EB3Contextual Info: 4 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT4LSDT464 L H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View, 133 MHz/100 MHz) 144-Pin Small-Outline DIMM • JEDEC-standard PC66 and PC100 rev 1.0 144-pin, |
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PC100 144-pin, 096-cycle MT4LSDT464 128MB MT4VR6418AG 256MB MT8VR12816AG MT8VR12818AG MT4LSDT464HG-10EB3 | |
Contextual Info: P8M648YA4, P16M6416YA4 SDRAM MODULE P8M648YB4, P16M6416YB4 8M, 16M x 64 DIMM Features: • • • • • • • • • PC-100 and PC133 Compatible JEDEC – Standard 168-pin, dual in-line memory Module DIMM TSOP components. Single 3.3v +.3v power supply. |
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P8M648YA4, P16M6416YA4 P8M648YB4, P16M6416YB4 PC-100 PC133 168-pin, 168-Pin P8M648YA4 | |
sdram spectek
Abstract: P8M648YL P8M648YLE P16M6416YL P8M648YA4 P8M648YB4 PC-100
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P8M648YA4, P16M6416YA4 P8M648YB4, P16M6416YB4 PC-100 PC133 168-pin, P8M648YA4 P8M648YB4 sdram spectek P8M648YL P8M648YLE P16M6416YL P8M648YA4 P8M648YB4 | |
Contextual Info: 8 MEG x 64 SDRAM SODIMM MT8LSDT864 L H SMALL-OUTLINE SDRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View, 100 MHz) 144-Pin Small-Outline DIMM • JEDEC-standard PC66 and PC100, rev 1.0, 144-pin, |
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PC100, 144-pin, 096-cycle MT8LSDT864 128MB MT4VR6418AG 256MB MT8VR12816AG MT8VR12818AG | |
P16M648YB7Contextual Info: P16M648YA7, P32M6416YA7 P16M648YB7, P32M6416YB7 SDRAM MODULE P16M648YL X 7, P32M6416YL(X)7 Features: • • • • • • • • • PC-100 and PC133 Compatible JEDEC – Standard 168-pin , dual in-line memory Module (DIMM) TSOP components. Single 3.3v +.3v power supply. |
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P16M648YA7, P32M6416YA7 P16M648YB7, P32M6416YB7 P16M648YL P32M6416YL PC-100 PC133 168-pin 16Mx8 P16M648YB7 | |
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0118-B
Abstract: simm 64MB
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184-pin 128MB MT8VR12818AG 512MB MT16VR25616AG MT16VR25618AG MT16VR25618AG-840A1 0118-B simm 64MB | |
Contextual Info: ADVANCE M T4C 10016/7 16 MEG x1 DRAM FAST PAGE MODE: MT4C10016 STATIC COLUMN: MT4C10017 FEATURES • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single power supply: +5V±10% or +3.3V±10% |
OCR Scan |
MT4C10016 MT4C10017 250mW 4096-cycle 475mil) 400mil) MT4C10016/7 | |
Contextual Info: FM28V020 256-Kbit 32 K x 8 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and |
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FM28V020 256-Kbit 256-Kbit 151-year 70-ns 140-ns | |
24C32F
Abstract: C32F marking C5t FOOTPRINT MO-229 2X3 SOLDERING c5t marking marking code C5T CAT24C32YE-G CAT24C32LE-G CAT24C32YI-GT3 CAT24C32WE-GT3
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CAT24C32 32-Kb 32-byte CAT24C32/D 24C32F C32F marking C5t FOOTPRINT MO-229 2X3 SOLDERING c5t marking marking code C5T CAT24C32YE-G CAT24C32LE-G CAT24C32YI-GT3 CAT24C32WE-GT3 | |
48-PIN
Abstract: 48-pin TSOP I flash memory marking code p18
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PD23C64340, 23C64380 64M-BIT 16-BIT PD23C64340 PD23C64380 48-pin 48-pin TSOP I flash memory marking code p18 | |
27T1
Abstract: MBRM110LT1 33t1 NCP1404 NCP1404SN19T1 NCP1404SN27T1 NCP1404SN30T1 NCP1404SN33T1 NCP1404SN50T1 19t1
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NCP1404 r14525 NCP1404/D 27T1 MBRM110LT1 33t1 NCP1404SN19T1 NCP1404SN27T1 NCP1404SN30T1 NCP1404SN33T1 NCP1404SN50T1 19t1 | |
BGA-48-0608
Abstract: BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI
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BS616UV1010 100ns x8/x16 R0201-BS616UV1010 BGA-48-0608 BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI | |
Contextual Info: Ultra Low Power CMOS SRAM 64K X 16 bit BS616UV1010 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 100ns |
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BS616UV1010 100ns x8/x16 -25oC BGA-48-0608 II-44 R0201-BS616UV1010 | |
NCV551SN50T1G
Abstract: NCP551 NCP551SN15T1G NCV551 MAY TSOP-5 NCP551SN15T1 NCP551SN18T1 NCP551SN18T1G NCP551SN25T1 NCP551SN30T1
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NCP551, NCV551 NCP551 NCP551 NCP551/D NCV551SN50T1G NCP551SN15T1G NCV551 MAY TSOP-5 NCP551SN15T1 NCP551SN18T1 NCP551SN18T1G NCP551SN25T1 NCP551SN30T1 | |
Contextual Info: FEDR27V6454G-02-03 OKI Semiconductor MR27V6454G 4M–Word x 16–Bit Page Mode Issue Date: Jun. 4, 2003 P2ROM FEATURES • 4,194,304-word × 16-bit configuration · Page size of 8-word x 16-Bit · 3.0 V to 3.6 V power supply · Random Access time 100 ns MAX |
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MR27V6454G FEDR27V6454G-02-03 304-word 16-bit 16-Bit MR27V6454G-xxxTN 48-pin 48-P-1220-0 50-1K) |