TSOP I 8MM X 13.4MM Search Results

IS61WV1288EEBLL

Contextual Info: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MARCH 2014 DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

Contextual Info: A29L004A Series 512K X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. 0.0 History Issue Date Initial issue March 9, 2005 PRELIMINARY March, 2005, Version 0.0

Contextual Info: A29L004 Series 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. History Issue Date Remark 0.0 Initial issue October 30, 2002 Preliminary 1.0 Final version release

Contextual Info: A29L004A Series 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. History Issue Date 0.0 Initial issue March 9, 2005 1.0 Final version release January 4, 2007

Contextual Info: A29L004 Series 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. History Issue Date 0.0 Initial issue October 30, 2002 Preliminary 1.0 Final version release

A29L004UW-70F

Abstract: A29L004UL-70F
Contextual Info: A29L004 Series 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. History Issue Date 0.0 Initial issue October 30, 2002 Preliminary 1.0 Final version release

Contextual Info: A29L004A Series 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. History Issue Date 0.0 Initial issue March 9, 2005 1.0 Final version release January 4, 2007

A29L004UL-70F

Abstract: A29L004UW-70F A29L004 A29L004L A29L004V A29L004X SA10
Contextual Info: A29L004 Series 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. History Issue Date 0.0 Initial issue October 30, 2002 Preliminary 1.0 Final version release

CX58

Abstract: SONY 28 pin SOP Plastic 28-pin static ram CX5 sony sony aa battery
Contextual Info: SONY» CXK58267ATM/AYM -70L L /85L L /10L L yi2L L Advance Information 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 58267A T M /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which

Contextual Info: A29L004B Series 512K X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. 0.0 History Issue Date Remark Initial issue May 28, 2013 Preliminary PRELIMINARY

CXK58257ATM

Abstract: CXK58257 SSTA14
Contextual Info: SONY» CXK58257ATM/A YM J o L u l ö L L / V o L L / l 2 L L Advance Information 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 3 2 ,768 w o rds by 8 bits, CMOS sta tic RAM. It is suitable fo r portable and ba tte ry back-up

SST30VR043

Abstract: SST30VR043-500-C-EH SST30VR043-500-C-KH SST30VR043-500-E-KH SST30VR043-500-I-KH
Contextual Info: 4 Megabit ROM + 256 Kilobit SRAM ROM/RAM Combo SST30VR043 Data Sheet FEATURES: • Organized as 512K x8 ROM + 32K x8 SRAM • ROM/RAM combo on a monolithic chip • Wide Operating Voltage Range: 2.7-3.3V • Chip Access Time – 2.7V Operation: 500 ns Max.

Contextual Info: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operating current : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation

AS6C4008

Contextual Info: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operating current : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation

AS6C4008

Abstract: AS6C4008-55PCN
Contextual Info: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operating current : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation

AS6C4008

Abstract: as6c4008-55sin AS6C4008-55PCN cmos 4008 AUG09 SRAM 32 pin
Contextual Info: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operatingcurrent : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation

Ams 1170

Abstract: SST30VR021 SST30VR021-500-C-WH SST30VR021-500-E-WH SST31LF021E
Contextual Info: 2 Megabit ROM + 1 Megabit SRAM ROM/RAM Combo SST30VR021 Data Sheet FEATURES: • Organized as 256K x8 ROM + 128K x8 SRAM • ROM/RAM combo on a monolithic chip • Equavalent ComboMemory Flash + SRAM : SST31LF021E for code development and pre-production • Wide Operating Voltage Range: 2.7-3.3V

Contextual Info: 2 Megabit ROM + 256 Kilobit SRAM ROM/RAM Combo SST30VR023 Data Sheet FEATURES: • Organized as 256K x8 ROM + 32K x8 SRAM • Low Power Dissipation: – Standby 3.0V Operation: 3 µW Typical – Operating 3.0V Operation: 10 mW (Typical) • Fully Static Operation

AS6C4008-55PCN

Contextual Info: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operatingcurrent : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All inputs and outputs TTLcompatible

Contextual Info: A29L004 Series 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Features Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications - Regulated voltage range: 3.0 to 3.6 volt read and write

a29l040l-70f

Abstract: A29L040L-70UF A29L040V-70 A29L040L-55UF A29L040V-55F A29L040V-70UF A29L040V-70F A29L040L70F A29L040-70F
Contextual Info: A29L040 Series 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue December 10, 2002 0.1 Add 32-pin DIP package type

Contextual Info: A29L040 Series 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue December 10, 2002 0.1 Add 32-pin DIP package type

Contextual Info: A29L040 Series 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Revision History History Issue Date 0.0 Initial issue December 10, 2002 0.1 Add 32-pin DIP package type

A29L040-70F

Abstract: A29L040L-70F A29L040V-70F A29L040L A29L040V-70 A29L040 IN3064
Contextual Info: A29L040 Series 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Revision History History Issue Date 0.0 Initial issue December 10, 2002 0.1 Add 32-pin DIP package type