TSOP 66 PIN PACKAGE THERMAL RESISTANCE Search Results

l74vhc1g66

Abstract: 74vHC1G66 l74vhc1g66dft1 marking code 10 sot23 sot23 marking code pp A114 A115
Contextual Info: LESHAN RADIO COMPANY, LTD. Single Supply Analog Switch L74VHC1G66 The L74VHC1G66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. Itachieves high speed propagation delays and low ON resistances while maintaining low power

sot23-5 marking xa

Abstract: 74vHC1G66
Contextual Info: MC74VHC1G66 Single Supply Analog Switch The MC74VHC1G66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This bilateral switch controls analog

TSOP-48 pcb LAYOUT

Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

A114

Abstract: A115 JESD22 MC74VHC1G66 MC74VHC4066
Contextual Info: MC74VHC1G66 Single Supply Analog Switch The MC74VHC1G66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This bilateral switch controls analog

sot23-5 marking xa

Abstract: A114 A115 JESD22 MC74VHC1G66 MC74VHC4066
Contextual Info: MC74VHC1G66 Single Supply Analog Switch The MC74VHC1G66 is an advanced high speed CMOS bilateral analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This bilateral switch controls analog

land pattern for TSOP 2-44

Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

cy7c199d

Abstract: cypress AN1064 sram system guidelines
Contextual Info: CY7C199D 256 K 32 K x 8 Static RAM 256 K (32 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ –40 °C to 85 °C ■ Pin and function compatible with CY7C199C ■ High speed ❐ tAA ■ = 10 ns Low active power ❐ ICC ■

cy7c1019dv

Contextual Info: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

Contextual Info: CY7C199D 256-Kbit 32 K x 8 Static RAM 256-Kbit (32 K × 8) Static RAM Features Functional Description • Temperature range ❐ –40 °C to 85 °C The CY7C199D is a high performance CMOS static RAM organized as 32,768 words by 8-bits. Easy memory expansion is

Contextual Info: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

EPROM retention

Abstract: EPROM retention bake eprom 24c04 sugar centrifuge 24LC65 27C256 28C64A PIC16C54 PIC16C54A PIC16C55
Contextual Info: Product Reliability OVERVIEW Microchip Technology Inc.'s products provide competitive leadership in quality and reliability, with demonstrated performance of less than 100 FITs Failures in Time operating life for most products. The designed-in reliability of Microchip's products are supported by

TSOP 66 pin Package thermal resistance

Contextual Info: CY7C1049DV33 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Pin and function compatible with CY7C1049CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 90 mA at 10 ns ■ Low CMOS standby power

Contextual Info: CY7C1010DV33 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Pin and function compatible with CY7C1010CV33 The CY7C1010DV33 is a high performance CMOS Static RAM organized as 256 K words by 8 bits. Easy memory expansion is

Contextual Info: CY7C1010DV33 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Pin and function compatible with CY7C1010CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 90 mA at 10 ns ■ Low CMOS standby power

CY62158EV30LL-45ZSXI

Contextual Info: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A

Contextual Info: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A

CY7C1059DV33

Abstract: CY7C1059DV33-10BAXI CY7C1059DV33-10ZSXI
Contextual Info: PRELIMINARY CY7C1059DV33 8-Mbit 1M x 8 Static RAM Functional Description[1] Features • High speed — tAA = 10 ns The CY7C1059DV33 is a high-performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an

t04 sot 23

Abstract: marking t04 sot23
Contextual Info: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

cy7c1019d-10

Contextual Info: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

IGBT Battery 120 watt Charger circuit diagrams

Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
Contextual Info: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .

Contextual Info: CY7C1011DV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. • Pin-and function-compatible with CY7C1011CV33 ■

Contextual Info: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Functional Description Features The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits. To write to the device, take chip enable (CE) and write enable (WE) inputs LOW. If byte low

cy7c1041dv

Abstract: 10bv CY7C1041DV33
Contextual Info: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits. To write to the device, take

Contextual Info: CY7C1041D 4-Mbit 256 K x 16 Static RAM Functional Description[1] Features The CY7C1041D is a high-performance CMOS static RAM organized as 256K words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data