TSOP 66 PACKAGE Search Results

VCCQ15

Contextual Info: White Electronic Designs W3E64M72S-XSBX PRELIMINARY* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

W3E64M72S-XBX

Contextual Info: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply

k4h510438b

Contextual Info: 512MB, 1GB, 2GB TSOP Registered DIMM Pb-Free DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revison 1.2 Oct. 2004

DD256M

Abstract: T37Z TSOP 66 Package thermal resistance
Contextual Info: 1 GigaBit Stacked DDR1 SDRAM DD54E, DD54ER 256M x 4 Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and

T37Z

Abstract: DD128 TSOP 66 pin Package thermal resistance DD128M82U3BB6 267-Mbps
Contextual Info: 1 GigaBit Stacked DDR1 SDRAM 128M x 8 DD55E, DD55ER Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and

m 052

Contextual Info: TSOP 2 66-P-400-0.65-K Mirror finish Package material Lead frame material Pin treatment Package weight (g) Rev. No./Last Revised Epoxy resin 42 alloy Solder plating( 5 m) 0.52 TYP. 1/Sept.24,1998

Contextual Info: TSOP 2 66-P-400-0.65-K Mirror finish 5 Package material Lead frame material Pin treatment Package weight (g) Rev. No./Last Revised Epoxy resin 42 alloy Solder plating(≥5µm) 0.52 TYP. 1/Sept.24,1998

TSOP 66 Package

Abstract: tsop 66
Contextual Info: EDD2516AKTA Package Drawing 66-pin Plastic TSOP II Unit: mm 22.22 ± 0.10 *1 A 11.76 ± 0.20 34 10.16 66 PIN#1 ID 1 0.65 0.17 to 0.32 33 B 0.13 M S A B 0.80 Nom 0.91 max. 0.25 0.10 +0.08 −0.05 0.10 S 0.09 to 0.20 S 1.20 max 1.0 ± 0.05 0 to 8° 0.60 +0.15

Contextual Info: 168PIN PC66 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V1WN Description Placement The TS8MLS64V1WN is a 8M x 64bits Synchronous Dynamic RAM high density for PC-66. The TS8MLS64V1WN consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages

IC43R16320B

Abstract: DDR333 DDR400 IC43R16320B-6TL
Contextual Info: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION JUNE 2008 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)

Contextual Info: 168PIN PC66 Unbuffered DIMM 128MB with 8Mx8 CL3 TS16MLS64V1WN Description Placement The TS16MLS64V1WN is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS16MLS64V1WN consists of 16pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION AUGUST 2007 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2516AETA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant)

EDD2508AETA

Abstract: EDD2508AETA-5B-E EDD2508AETA-5C-E EDD2508AETA-6B-E EDD2508AETA-7A-E DDR333 DDR400
Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2508AETA 32M words x 8 bits Specifications Features • Density: 256M bits • Organization  8M words × 8 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply:

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2508AETA-5 32M words x 8 bits, DDR400 Specifications Pin Configurations • Density: 256M bits • Organization  8M words × 8 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant)

Contextual Info: 168PIN PC66 Unbuffered DIMM 32MB With 2M X8 CL3 TS4MLS64V1PN Description Placement The TS4MLS64V1PN is a 4M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS4MLS64V1PN consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: PRELIMINARY DATA SHEET 128M bits DDR SDRAM EDD1216AJTA 8M words x 16 bits Specifications Features • Density: 128M bits • Organization ⎯ 2M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant) • Power supply:

EDD2516AETA-5B-E

Abstract: DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E
Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2516AETA 16M words x 16 bits Specifications Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply:

Contextual Info: 184PIN DDR333Unbuffered DIMM 512MB With 32Mx8 CL2.5 TS64MLD72V3F5 Description Placement The TS64MLD72V3F5 is a 64Mx72bits Double Data Rate SDRAM high density for DDR333. The TS64MLD72V3F5 consists of 18pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048

DDR400

Contextual Info: DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-5-E 16M words x 16 bits, DDR400 Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

Contextual Info: DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-5-E 16M words x 16 bits, DDR400 Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)