TSOP 338 Search Results
TSOP 338 Price and Stock
Vishay Intertechnologies TSOP57338TT1Infrared Receivers IR SENSOR IC 38KHZ AGC 3 |
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TSOP57338TT1 | 5,015 |
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Vishay Intertechnologies TSOP6338TTInfrared Receivers Panhead 38kHz AGC3 |
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TSOP6338TT | 4,359 |
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Vishay Intertechnologies TSOP34338Infrared Receivers 2.7-5.5V 38 kHz |
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TSOP34338 | 2,672 |
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Vishay Intertechnologies TSOP75338TTInfrared Receivers IR sensor IC 38kHz |
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TSOP75338TT | 2,355 |
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Vishay Intertechnologies TSOP75338WTRInfrared Receivers IR Receiver Module |
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TSOP75338WTR | 2,331 |
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TSOP 338 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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viking pc100
Abstract: tsop 338 dtx 360
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PC100/PC133 VR8ARxx7238xTx 128MB 16Mx72 VR8AR167238CTD PC100 VR8AR167238CTC PC133 VR8AR167238CTE viking pc100 tsop 338 dtx 360 | |
Contextual Info: HYM7V73AC801BTHGC 8Mx72, 8Mx8 based, PC133 DESCRIPTION The Hynix HYM7V73AC801B H-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in 56pln TSSOP |
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HYM7V73AC801BTHGC 8Mx72, PC133 HYM7V73AC801B 8Mx72bits 400mil 54pin 18bits 56pln 24pin | |
Contextual Info: HYM7V75AC801BTHG 8Mx72, 8Mx8 based, PC100 DESCRIPTION The Hynix HYM7V75AS801B H-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bit CMOS Synchronous DRAMs In 400mil 54pin TSOP-II package, two 18bits driver ICs in 56pin TSSOP |
OCR Scan |
HYM7V75AC801BTHG 8Mx72, PC100 HYM7V75AS801B 8Mx72bits 400mil 54pin 18bits 56pin 24pin | |
am29ma16
Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
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S29JL064H
Abstract: S29PL064J
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Am29DL640D S29JL064H S29PL064J | |
KJ004
Abstract: kj 004
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HYM72V32C736AT8 32Mx72, 32Mx8 PC133 HYM72V32C736AT8 32Mx72bits 32Mx8bits 400mil 64pin 168pin KJ004 kj 004 | |
Contextual Info: MGSF2P02HD Product Preview Power MOSFET 2 Amps, 20 Volts P–Channel TSOP–6 This device represents a series of Power MOSFETs which are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low |
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MGSF2P02HD | |
Contextual Info: Am29DL640G Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640G and is the factory-recommended migration path. Please refer to the S29JL064H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640G and is the |
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Am29DL640G S29JL064H S29PL064J | |
amd part marking
Abstract: S29JL064H S29PL064J
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Am29DL640D S29JL064H S29PL064J amd part marking | |
A Listing and Cross Reference of Available Technical Literature from ON Semiconductor
Abstract: MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual
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SG385/D Jul-2000 OT-223, OT-23, SC-70/SOT-323, MTP75N06HD r14525 A Listing and Cross Reference of Available Technical Literature from ON Semiconductor MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual | |
Contextual Info: Features • Fast Read Access Tim e - 45 ns • Low-Power CMOS Operation - 100 jiA max. Standby - 20 mA max. Active at 5 MHz • JEDEC Standard Packages - 28-Lead 600-mii PDIP - 32-Lead PLCC - 28-Lead TSOP and SOIC • 5 V ± 10% Supply • High-Reliability CMOS Technology |
OCR Scan |
28-Lead 600-mii 32-Lead AT27C512R AT27C512R 288-bit org008( 28-Lead, | |
Contextual Info: Features • Fast Read Access Tim e - 45 ns • Low-Power CMOS Operation - 100 jiA max. Standby - 20 mA max. Active at 5 MHz • JEDEC Standard Packages - 28-Lead 600-mii PDIP - 32-Lead PLCC - 28-Lead TSOP and SOIC • 5 V ± 10% Supply • High Reliability CMOS Technology |
OCR Scan |
28-Lead 600-mii 32-Lead AT27C256R AT27C256R 144-bit | |
AN1064Contextual Info: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS) |
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CY14B104LA, CY14B104NA 44-/54-pin 48-ball CY14B104LA) CY14B104NA) AN1064 | |
BT 1840 PA
Abstract: G563 MSM44256BJ TH256 MSM44256 M5M442568J TIM-01 M5M442S6BJ
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MH256328J-7, 8388608-BIT 282144-WORD 32-BIT 256Kx W25632BJ-7 WZ5632BJ-B W25632BJ-10 72-pins MH25632BJ-7, BT 1840 PA G563 MSM44256BJ TH256 MSM44256 M5M442568J TIM-01 M5M442S6BJ | |
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Contextual Info: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS) |
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CY14B104LA, CY14B104NA CY14B104LA) CY14B104NA) 44-/54-pin 48-ball | |
Contextual Info: 16Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V73C1601 H-Series DESCRIPTION The Hyundai HYM71V73C1601 H-Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 16Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in |
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16Mx72 PC133 16Mx8 HYM71V73C1601 16Mx72bits 16Mx8bit 400mil 54pin 18bits | |
Contextual Info: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS) |
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CY14B104LA, CY14B104NA 44-/54-pin 48-ball CY14B104LA) CY14B104NA) | |
Contextual Info: 16Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V75S1601 H-Series DESCRIPTION The Hyundai HYM71V75S1601 H-Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 16Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in |
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16Mx72 PC100 16Mx8 HYM71V75S1601 16Mx72bits 16Mx8bit 400mil 54pin 18bits | |
Contextual Info: 16Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V75S1601 H-Series DESCRIPTION The Hyundai HYM71V75S1601 H-Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 16Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in |
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16Mx72 PC100 16Mx8 HYM71V75S1601 16Mx72bits 16Mx8bit 400mil 54pin 18bits | |
Contextual Info: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS) |
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CY14B104LA, CY14B104NA CY14B104LA) CY14B104NA) 44-/54-pin 48-ball | |
HYM7V75AC801BTHG-10P
Abstract: HYM7V75AC801BTHG-10S HYM7V75AC801BTHG-8
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8Mx72 PC100 HYM7V75AC801B HYM7V75AS801B 8Mx72bits 400mil 54pin 18bits 56pin 24pin HYM7V75AC801BTHG-10P HYM7V75AC801BTHG-10S HYM7V75AC801BTHG-8 | |
HYM72V32C736T8
Abstract: HYM72V32C736T8-H RA12
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32Mx72 PC133 32Mx8 HYM72V32C736T8 32Mx72bits 32Mx8bits 400mil 54pin 168pin HYM72V32C736T8-H RA12 | |
Contextual Info: 8Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V75AC801B H-Series DESCRIPTION The Hyundai’ s HYM7V75AS801B H-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in 56pin |
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8Mx72 PC100 HYM7V75AC801B HYM7V75AS801B 8Mx72bits 400mil 54pin 18bits 56pin 24pin | |
Contextual Info: 16Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16C755HCT8 Series DESCRIPTION The Hynix HYM71V16C755HCT8 Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin |
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16Mx72 PC100 16Mx8 HYM71V16C755HCT8 16Mx72bits 16Mx8bits 400mil 54pin 168pin |