TSOP 3302 Search Results

spansion top marking

Abstract: spansion part marking spansion marking S29AL032D10FA1010 tsop package S29AL032D AMD top marking TS048 TRAY spansion tape AL032D
Contextual Info: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL032D Floating Gate Flash Memory 32 Megabit 2 M x 16-Bit / 4 M x 8-Bit Spansion Overview Spansion™, the Flash memory subsidiary of AMD and Fujitsu, is the

Spansion s29al016d

Abstract: al016d S29AL016D spansion top marking am29lv160bt spansion part marking spansion marking VBK048 TS048 TRAY S29AL016D10BA1010
Contextual Info: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL016D Floating Gate Flash Memory 16 Megabit 1 M x 16-Bit / 2 M x 8-Bit Spansion Overview Spansion™, the Flash memory subsidiary of AMD and Fujitsu, is the

VBK048

Abstract: k 2674 S29AL004D spansion top marking TS048 TRAY AL004D
Contextual Info: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL004D Floating Gate Flash Memory 4 Megabit 256 K x 16-Bit / 512 K x 8-Bit Spansion Overview

Contextual Info: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL016M MirrorBit Flash Memory TM 16 Megabit 1 M x 16-Bit / 2 M x 8-Bit Spansion Overview FEATURES AND BENEFITS

S29AL008D

Abstract: AL008 spansion part marking AL008D spansion s29al008d VBK048 spansion top marking S29AL008D10BA1010 BGA package tray 40 x 40
Contextual Info: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL008D Floating Gate Flash Memory 8 Megabit 512 K x 16-Bit / 1 M x 8-Bit Spansion Overview

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features

CY62148E

Abstract: CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVI CY62148EV30LL-45BVXI
Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ■ Pin compatible with CY62148DV30

CY62148E

Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 330281
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Abstract: CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down

CY62148E

Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down

925501

Contextual Info: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular

Contextual Info: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular

Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down

Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down

Contextual Info: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular

IJ01

Abstract: CXK581000AYM CXK581OQOATM CXKS81003ATM SCHB
Contextual Info: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

E28F008SA-120

Abstract: E28F008SA
Contextual Info: inlel 28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY Hlgh-Denslty Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time SRAM-Compatible Write Interface Extended Cycling Capability — 100,000 Block Erase Cycles

Contextual Info: SONY CXK77920TM/YM 262144-WORD by 9-BIT HIGH SPEED SYNCHRONOUS STATIC RAM -11/12/15 Preliminary Description The CXK77920TM/YM is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-word by 9-bit. This syn­ chronous SRAM integrates input registers, high