TSMC 0.35 Search Results

SY68730ZC

Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
Contextual Info: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18

Contextual Info: RELIABILITY REPORT DATE : 2/18/05 QUALITY ENG : PART NUMBER : Dinh Pham MIC3001 PROJECT # : PACKAGE TYPE : ASSEMBLY LOC D/C # LOT # FAB # M/C PROCESS 23119-3 MIC3001 4x4 MLF-24L AMKOR 0342 GR61294.8 TSMC G700 TSMC 0.35 24016-1 (MIC3001) 4x4 MLF-24L AMKOR

PCN9805

Abstract: tsmc 0.35 EPF10K100A EPF10K50V C42-43
Contextual Info: PROCESS CHANGE NOTIFICATION FLEX 10K AND FLEX 6000 ADDITIONAL SOURCE OF SUPPLY Altera is adding WaferTech as an additional source of supply for FLEX 10K and FLEX 6000 products currently run at TSMC. WaferTech is a joint venture with TSMC, Altera and other

ISSI

Abstract: TSMC embedded Flash TSMC Flash memory 0.18 motorola tsmc flash Integrated Silicon Solution Inc "embedded dram" tsmc memory issi tsmc 0.18 flash TSMC embedded EEPROM
Contextual Info: Memory Based Solutions ISSI ¨ Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI198_11/98 ¨ Integrated Silicon Solution, Inc. Over Ten Years of High-Performance Memories ISSI Milestones Incorporated - 1988 u First Foundry Partnership TSMC - 1990

TSMC 0.35Um

Contextual Info: RELIABILITY REPORT DATE: 11/16/11 QUALITY ENG : PRODUCT : Micrel Rel/QA MIC3003GFL QUAL VEHICLES PACKAGE TYPE : ASSEMBLY LOC. FAB LOC. PROCESS 24L FC-MLF 3mmx3mm UNISEM TSMC TMSC 0.35 um MIC3003GFL ESD RATINGS LATCH-UP RATING FIT +/- 3000V HBM (Human Body Model)

TSMC embedded Flash

Abstract: TSMC Flash memory 0.18 ISSI Integrated Silicon Solution Inc
Contextual Info: Over Ten Years of High-Performance Memories ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI198_11/98 ® Integrated Silicon Solution, Inc. Over Ten Years of High-Performance Memories ISSI Milestones Incorporated - 1988 u First Foundry Partnership TSMC - 1990

tristate buffer cmos

Abstract: TSMC 0.18 um CMOS "embedded dram" tsmc tsmc cmos 0.13 um TSMC 0.18um tsmc cmos 0.13 MOSAID Technologies TSMC cmos 0.18um
Contextual Info: SoC-RAMTM PL Memory Core 0.18µm 4.97Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank

ADV0202

Abstract: MAX7000AE epm3032 EPM7032AE EPM3128A ALTERA EPM3256A EPM3032A EPM3064A EPM3128A EPM7064AE
Contextual Info: Page 1 of 2 CUSTOMER ADVISORY ADV0202 MAX7000AE AND MAX3000A PROCESS TRANSITION UPDATE Change Description: Updated transition schedule for PCN0008 and PCN0010 published in 2000, for the MAX7000AE and MAX3000A transition to a 0.30-micron process at TSMC, Taiwan.

roadmap ISSI

Abstract: IS61C1024 IS61C64AH IS61C64B IS62C64 IS89C52 IS25M080A5T2R IS80C32 flash memory 5v 16M-bit 48 TSOP ISSI
Contextual Info: Memory Based Solutions ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI_498 04/09/98 ® Integrated Silicon Solution, Inc. Memory Based Solutions ISSI Milestones • • • • • • • Incorporated - 1988 First Foundry Partnership TSMC - 1990

tsmc cmos 0.13 um

Abstract: "embedded dram" tsmc
Contextual Info: SoC-RAMTM PL Memory Core 0.18µm 3Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank

TSMC embedded Flash

Abstract: NT410 tsmc 0.18 flash TSMC Flash cmos tsmc 0.18 TSMC Flash memory 0.18 TSMC Flash IP tsmc cmos NT1208 NT1115
Contextual Info: Taiwan Semiconductor Manufacturing Company Ltd. January 27, 2000 Page 1 FOR IMMEDIATE RELEASE CONTACT IN TAIWAN CONTACT IN NEW YORK Derek Tien or Julie Chan Finance Division TSMC invest@tsmc.com.tw 886/3/567-2664 Mami Ogawa Thomson Financial Investor Relations

tsmc cmos 0.13 um

Abstract: "embedded dram" tsmc D1270 TSMC cmos 0.18um TSMC 0.18Um MOSAID Technologies
Contextual Info: SoC-RAMTM PL Memory Core 0.18µm 8Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank

JESD22-A114F

Abstract: JESD47 JESD-47 JEDEC JESD22-B116 free download JESD22-A102C JESD22-A108B JESD22-B116A JESD22-A114-F JESD78B JESD22-A102-C
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: W-1002-01(R4) DATE: October 4, 2010 Affected Products: Refer to the attached list of products transferring from IDT Fab 4 to TSMC

PCN0010

Abstract: epm3032 EPM3032A EPM3064A EPM3128A EPM3256A linear date code
Contextual Info: PROCESS CHANGE NOTIFICATION MAX 3000A DEVICE PROCESS TRANSITION Altera’s MAX 3000A devices will be transitioned to a 0.30-micron quad metal layer process at TSMC, Taiwan. This process is a linear shrink of the existing 0.35-micron quad metal layer process using the same equipment and process flow. These devices will

PCN9903

Abstract: altera date code EPF6010A EPF6016A EPF6024A
Contextual Info: PROCESS CHANGE NOTIFICATION FLEX 6000 DEVICES Overview Altera’s FLEX 6000 devices will be manufactured on a 0.30-µ process at WaferTech, a TSMC and Altera joint venture. This process is a linear shrink of the existing 0.35-µ process, using the same equipment and process flow. The new products will be pin-,

PCN0008

Abstract: EPM7064AE programming codes EPM7032AE EPM7128AE EPM7256AE EPM7512AE altera date code
Contextual Info: PROCESS CHANGE NOTIFICATION MAX 7000AE DEVICE PROCESS TRANSITION Altera’s MAX 7000AE devices will be transitioned to a 0.30-micron quad metal layer process at TSMC, Taiwan. This process is a linear shrink of the existing 0.35-micron quad metal layer process using the same equipment and process flow. These devices will

cmos tsmc 0.18

Abstract: tsmc eeprom ram tsmc 0.18 tsmc cmos 0.35 0.35 tsmc cmos 16V8 20V8
Contextual Info: PRESS RELEASE CYPRESS AND TSMC TEAMING UP ON 0.18-MICRON CPLD FAMILY Six-Layer Metal Process will Deliver Very High Density and Performance with Low Power SAN JOSE, Calif., September 14, 1998 - Cypress Semiconductor Corp. NYSE:CY and Taiwan Semiconductor Manufacturing Company (NYSE:TSM) today announced that they have entered

70241k

Abstract: d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P
Contextual Info: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Reliability Report 1997-1998 An ISO 9001 Company 1997 Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. • 2231 Lawson Lane • Santa Clara, CA 95054

c9013

Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
Contextual Info: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.

TSMC 0.18Um

Contextual Info: Nomenclature Guide TW Types TW aaaa bb - c d e f g# - h j k l PREFIX DEVICE NUMBER AT: Auto Wafer EP: Epi Wafer l - OPTIONS S = SLT B = Burn-in H = High Temp. Testing I = Industrial V = High Volt Testing T = Tape & Reel Packing c - PROCESS This character is included in the

TSMC 0.35um

Abstract: tsmc 0.18um Intersil marking code TSMC 0.25Um vanguard 0.35Um tsmc 0.18-um utac qfn TSMC 90nm TW6818-LA1-GR
Contextual Info: Nomenclature Guide TW Types TW aaaa bb - c d e f g# - h j k l PREFIX DEVICE NUMBER AT: Auto Wafer EP: Epi Wafer l - OPTIONS S = SLT B = Burn-in H = High Temp. Testing I = Industrial V = High Volt Testing T = Tape & Reel Packing c - PROCESS This character is included in the

018U

Abstract: Nordic Semiconductor ADC Verilog Implementation TSMC 0.18Um
Contextual Info: PhysicalExpress H HA AN ND DO OFFFF A AN ND DM MA AN NU UFFA AC CTTU UR RIIN NG GS SE ER RV VIIC CE E What is PhysicalExpress? Through several years of experience with Handoff projects, Nordic Semiconductor is able to present customers with a well-proven methodology and a simple, streamlined interface. Combining this methodology with state-of-the-art EDA tools and silicon proven IP, we

sy10s897jc

Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
Contextual Info: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2

ATML

Abstract: ATML U 0420g MIC5205M5 ATML H Unisem 0116E ATML 28 SPN860003 MIC2211
Contextual Info: High Temp Bias Moisture Life Test TA = 85C / 85%RH at rated voltage or Highly Accelerated Stress Test HAST +131C / 85%RH MSL Pkg Lds Device D/C Process L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 6 6 6 10 10 10 10