TSM35N03CP Search Results

Contextual Info: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V Pin assignment: 1. Gate 2. Drain 3. Source ID = 35A RDS on , Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Features    High Density Cell Design for Ultra Low On-Resistance 

Contextual Info: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features   ID (A) 8.5 @ VGS = 10V 30 13 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

SOT-252

Abstract: TO-252 MOSFET marking A07 "N-Channel MOSFET" 100V single n-channel n-channel mosfet transistor power 1A 25V MOSFET SOT-252 20v 18BSC TSM35N03
Contextual Info: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 8.5 @ VGS = 10V 30 13 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

SOT-252

Abstract: TSM35N03CP 18BSC TSM35N03
Contextual Info: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 13 @ VGS = 10V 30 8.5 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

TSM35N03

Abstract: TSM35N03CP 50a 30v 8.5m MOSFET
Contextual Info: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS on , Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Pin assignment: 1. Gate 2. Drain 3. Source Features — — — High Density Cell Design for Ultra Low On-Resistance —