TSM3424 Search Results

TSM3424 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TSM3424		Taiwan Semiconductor	30V N-Channel MOSFET	Original	PDF	350.83KB	6
TSM3424CX6RF		Taiwan Semiconductor	30V N-Channel MOSFET	Original	PDF	350.83KB	6

TSM3424 Price and Stock

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TSC Electronics Ltd


TSC Electronics Ltd TSM3424CX6 RF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TSM3424CX6 RF		5,969			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TSC Electronics Ltd TSM3424CX6RF 30 V N-CHANNEL MOSFET Power Field-Effect Transistor, 6.7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TSM3424CX6RF		9,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TSM3424 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TSM3424 30V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ●	Original	TSM3424 OT-26 TSM3424CX6	PDF
Contextual Info: TAIW AN s TSM3424 SEMICONDUCTOR 30V N-Channei MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCTS ÜMMARY P in D e fin itio n : VDS{V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on){lTlÛ) Id (A) 30 @ VGS= 10V 6.7 42 @ V gs = 4.5V 5.7 30 1 23 Features	OCR Scan	TSM3424 3424C	PDF
marking code 67a sot23 6 Abstract: mosfet 452 TSM3424 MARKING SO SOT26 Contextual Info: TSM3424 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ●	Original	TSM3424 OT-23 TSM3424CX6 OT-26 marking code 67a sot23 6 mosfet 452 TSM3424 MARKING SO SOT26	PDF
MARKING SO SOT26 Contextual Info: TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS V RDS(on)(mΩ) 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ●	Original	TSM3424 OT-26 TSM3424CX6 OT-26 MARKING SO SOT26	PDF
MOSFET MARKING 3g Abstract: 67A SOT 23 6 3G MOSFET M3424 Contextual Info: E TAIWAN TSM3424 S E M IC O N D U C T O R 30V N-Channei MOSFET pb RoHS CO M PLIANCE SO T-26 854 PR O D U C TS ÜMMARY P in D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V D S{V ) 30 1 23 Features R D S (o n ){ lT lÛ ) Id ( A ) 30 @ VGS= 10V	OCR Scan	M3424 OT-26 TSM3424CX6 OT-26 MOSFET MARKING 3g 67A SOT 23 6 3G MOSFET M3424	PDF