TSM2N7002ECX Search Results

TSM2N7002ECX Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TSM2N7002ECX		Taiwan Semiconductor	50V N-Channel Enhancement Mode MOSFET	Original	PDF	204.51KB	5

TSM2N7002ECX Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TSM2N7002E 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 3 @ VGS = 10V 300 4 @ VGS = 4.5V 200 Block Diagram ● Low On-Resistance: 3Ω ● Low Input and Output Leakage	Original	TSM2N7002E OT-23 OT-323 TSM2N7002ECX TSM2N7002ECU 20rty	PDF
TSM2N7002 Abstract: TSM2N7002E TSM2N7002ECU TSM2N7002ECX Contextual Info: TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS on , Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Advanced trench process technology No minority carrier storage time	Original	TSM2N7002E 250mA OT-363 TSM2N7002ECX OT-23 TSM2N7002ECU OT-323 OT-323 TSM2N7002 TSM2N7002E TSM2N7002ECU TSM2N7002ECX	PDF
marking A07 Abstract: TSM2N7002E TSM2N7002ECX Contextual Info: E TAIW AN TSM2N7002E S E M IC O N D U C T O R 60V N-Channel MOSFET pb RoHS CO M PLIANCE SO T-23 SOT-323 PRODUCT SUMMARY P in D e fin itio n : 1. Gate 2. Source 3. Drain é 1 2 1 V ds (V ) R oS (on)(Q ) lD (mA) 3 @ V CS= 1 Û V 300 4 @ V<;s z 4.5V 200 60	OCR Scan	OT-23 OT-323 TSM2N7002E TSM2N7002ECX OT-23 7002ECU OT-323 marking A07 TSM2N7002E	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: TSM2N7002E 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 3 @ VGS = 10V 300 4 @ VGS = 4.5V 200 Block Diagram ● Low On-Resistance: 3Ω ● Low Input and Output Leakage

Original

TSM2N7002E OT-23 OT-323 TSM2N7002ECX TSM2N7002ECU 20rty

PDF

TSM2N7002

Abstract: TSM2N7002E TSM2N7002ECU TSM2N7002ECX
Contextual Info: TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS on , Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Advanced trench process technology No minority carrier storage time

Original

TSM2N7002E 250mA OT-363 TSM2N7002ECX OT-23 TSM2N7002ECU OT-323 OT-323 TSM2N7002 TSM2N7002E TSM2N7002ECU TSM2N7002ECX

PDF

marking A07

Abstract: TSM2N7002E TSM2N7002ECX
Contextual Info: E TAIW AN TSM2N7002E S E M IC O N D U C T O R 60V N-Channel MOSFET pb RoHS CO M PLIANCE SO T-23 SOT-323 PRODUCT SUMMARY P in D e fin itio n : 1. Gate 2. Source 3. Drain é 1 2 1 V ds (V ) R oS (on)(Q ) lD (mA) 3 @ V CS= 1 Û V 300 4 @ V<;s z 4.5V 200 60

OCR Scan

OT-23 OT-323 TSM2N7002E TSM2N7002ECX OT-23 7002ECU OT-323 marking A07 TSM2N7002E

PDF