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Catalog Datasheet	Type	Document Tags	PDF
IS3015 Abstract: 18BSC TSM20N06CP SOT252 SOT-252 Contextual Info: TSM20N06 Preliminary 60V N-Channel MOSFET TO-252 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ● ● ID (A) 78 @ VGS = 10V 10 90 @ VGS = 4.5V 5 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance	Original	TSM20N06 O-252 TSM20N06CP IS3015 18BSC SOT252 SOT-252	PDF

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IS3015

Abstract: 18BSC TSM20N06CP SOT252 SOT-252
Contextual Info: TSM20N06 Preliminary 60V N-Channel MOSFET TO-252 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ● ● ID (A) 78 @ VGS = 10V 10 90 @ VGS = 4.5V 5 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

Original

TSM20N06 O-252 TSM20N06CP IS3015 18BSC SOT252 SOT-252

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