TSC DATE CODE MARKING Search Results
TSC DATE CODE MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5446/BEA |
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5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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5447/BEA |
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5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) |
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54LS42/BEA |
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54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) |
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54LS190/BEA |
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54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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TC4511BP |
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CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 | Datasheet |
TSC DATE CODE MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSN520M60 J-STD-020 2011/65/EU 2002/96/EC D1408015 | |
Contextual Info: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSN520M60 J-STD-020 2011/65/EU 2002/96/EC D1408069 | |
pciset sb82371sb
Abstract: sb82371sb CF9H SB82437FX66 intel 430FX pciset sb82437fx-66 430FX sb82371SB motherboard SB82437FX SB82438
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430FX 82437FX 82438FX 82371FB 82430FX pciset sb82371sb sb82371sb CF9H SB82437FX66 intel 430FX pciset sb82437fx-66 sb82371SB motherboard SB82437FX SB82438 | |
Contextual Info: BAV19W-G/BAV20W-G/BAV21W-G Taiwan Semiconductor CREAT BY ART Small Signal Product High Voltage Fast Switching Diode FEATURES - Fast switching device trr<50ns - Surface mount device type - Moisture sensitivity level 1 - Low reverse leakage - Pb free and RoHS compliant |
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BAV19W-G/BAV20W-G/BAV21W-G OD-123 OD-123 MIL-STD-202, C/10s S1404017 | |
Contextual Info: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 | |
Contextual Info: 2A01 thru 2A07 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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2011/65/EU 2002/96/EC DO-204AC DO-15) JESD22-B102 D1406010 | |
Contextual Info: SK20H45 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - For use as Bypass diode in Solar application. |
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SK20H45 2011/65/EU 2002/96/EC JESD22-B102 D1310005 | |
Contextual Info: 1N5408D Taiwan Semiconductor CREAT BY ART FEATURES 2000V General Purpose Rectifier - High capability DC blocking voltage - Negligble leakage sustain the high operation temperature - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
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1N5408D 2011/65/EU 2002/96/EC DO-201AD JESD22-B102 D1404012 | |
Contextual Info: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 | |
Contextual Info: BA157G thru BA159G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency |
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BA157G BA159G 2011/65/EU 2002/96/EC DO-204AL DO-41) AEC-Q101 JESD22-B102 | |
Contextual Info: 1SMC5352 Taiwan Semiconductor CREAT BY ART Surface Mount Zener Diodes FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and |
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1SMC5352 J-STD-020 2011/65/EU 2002/96/EC DO-214AB JESD22-B102 D1407001 | |
Contextual Info: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1407012 | |
Contextual Info: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on |
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1SS400 200mW, OD-523F OD-523F MIL-STD-202, C/10s S1404002 | |
SchottkyContextual Info: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate |
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RB520S-30 200mW, OD-523F OD-523F MIL-STD-202, C/10s S1404003 Schottky | |
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Contextual Info: TSF30U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and |
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TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401022 | |
d2sbContextual Info: D2SB05 thru D2SB80 Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Single-Phase Bridge Rectifier - Ideal for printed circuit board - High case dielectric strength - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and |
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D2SB05 D2SB80 E-326243 2011/65/EU 2002/96/EC JESD22-B102 D1311021 d2sb | |
HER605GContextual Info: HER601G thru HER606G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated High Efficient Rectifiers - Glass passivated chip junction - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
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HER601G HER606G 2011/65/EU 2002/96/EC JESD22-B102 D1408002 HER605G | |
Contextual Info: UG06A thru UG06D Taiwan Semiconductor CREAT BY ART Glass Passivated Ultra Fast Rectifiers FEATURES - Glass passivated chip junction - Ulterafast recovery time for high efficiency - Excellent high temperature switching - ldeally suited for use in very high frequency |
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UG06A UG06D 2011/65/EU 2002/96/EC JESD22-B102 D1407024 | |
Contextual Info: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and |
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1N4001G 1N4007G 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1310025 | |
Contextual Info: HT11G thru HT18G Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High current capability - High reliability - High surge current capability - High efficiency, Low VF - Compliant to RoHS Directive 2011/65/EU and |
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HT11G HT18G 2011/65/EU 2002/96/EC JESD22-B102 25oCd D1407005 | |
Contextual Info: 1T1G thru 1T7G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and |
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2011/65/EU 2002/96/EC JESD22-B102 D1407004 | |
1N5408Contextual Info: 1N5400 thru 1N5408 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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1N5400 1N5408 2011/65/EU 2002/96/EC DO-201AD JESD22-B102 D1406023 1N5408 | |
Contextual Info: KBP101G thru KBP107G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243 |
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KBP101G KBP107G E-326243 2011/65/EU 2002/96/EC JESD22-B102 D1311015 | |
SchottkyContextual Info: BAT54W/AW/CW/SW Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on |
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BAT54W/AW/CW/SW 200mW OT-323 OT-323 C/10s S1404009 Schottky |