TSC DATE CODE MARKING Search Results
TSC DATE CODE MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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TSC DATE CODE MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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tsn520m60j-std-0202011/65/eu2002/96/ec+1 | |
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Contextual Info: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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tsn520m60j-std-0202011/65/eu2002/96/ec+1 | |
pciset sb82371sb
Abstract: sb82371sb CF9H SB82437FX66 intel 430FX pciset sb82437fx-66 430FX sb82371SB motherboard SB82437FX SB82438
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430fx82437fx82438fx82371fb+10 | |
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Contextual Info: BAV19W-G/BAV20W-G/BAV21W-G Taiwan Semiconductor CREAT BY ART Small Signal Product High Voltage Fast Switching Diode FEATURES - Fast switching device trr<50ns - Surface mount device type - Moisture sensitivity level 1 - Low reverse leakage - Pb free and RoHS compliant |
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bav19w-g/bav20w-g/bav21w-god-123mil-std-202c/10s+1 | |
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Contextual Info: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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tssa3u45j-std-0202011/65/eu2002/96/ec+3 | |
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Contextual Info: 2A01 thru 2A07 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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2011/65/eu2002/96/ecdo-204acdo-15+2 | |
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Contextual Info: SK20H45 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - For use as Bypass diode in Solar application. |
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sk20h452011/65/eu2002/96/ecjesd22-b102+1 | |
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Contextual Info: 1N5408D Taiwan Semiconductor CREAT BY ART FEATURES 2000V General Purpose Rectifier - High capability DC blocking voltage - Negligble leakage sustain the high operation temperature - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
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1n5408d2011/65/eu2002/96/ecdo-201ad+2 | |
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Contextual Info: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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tsp10u45sj-std-0202011/65/eu2002/96/ec+3 | |
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Contextual Info: BA157G thru BA159G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency |
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ba157gba159g2011/65/eu2002/96/ec+4 | |
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Contextual Info: 1SMC5352 Taiwan Semiconductor CREAT BY ART Surface Mount Zener Diodes FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and |
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1smc5352j-std-0202011/65/eu2002/96/ec+3 | |
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Contextual Info: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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tspb15u50sj-std-0202011/65/eu2002/96/ec+1 | |
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Contextual Info: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on |
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1ss400200mwod-523fmil-std-202+2 | |
SchottkyContextual Info: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate |
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rb520s-30200mwod-523fmil-std-202+3 | |
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Contextual Info: TSF30U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and |
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tsf30u60c2011/65/eu2002/96/ecito-220ab+2 | |
d2sbContextual Info: D2SB05 thru D2SB80 Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Single-Phase Bridge Rectifier - Ideal for printed circuit board - High case dielectric strength - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and |
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d2sb05d2sb80e-3262432011/65/eu+4 | |
HER605GContextual Info: HER601G thru HER606G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated High Efficient Rectifiers - Glass passivated chip junction - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
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her601gher606g2011/65/eu2002/96/ec+3 | |
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Contextual Info: UG06A thru UG06D Taiwan Semiconductor CREAT BY ART Glass Passivated Ultra Fast Rectifiers FEATURES - Glass passivated chip junction - Ulterafast recovery time for high efficiency - Excellent high temperature switching - ldeally suited for use in very high frequency |
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ug06aug06d2011/65/eu2002/96/ec+2 | |
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Contextual Info: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and |
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1n4001g1n4007g2011/65/eu2002/96/ec+4 | |
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Contextual Info: HT11G thru HT18G Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High current capability - High reliability - High surge current capability - High efficiency, Low VF - Compliant to RoHS Directive 2011/65/EU and |
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ht11ght18g2011/65/eu2002/96/ec+3 | |
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Contextual Info: 1T1G thru 1T7G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and |
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2011/65/eu2002/96/ecjesd22-b102d1407004 | |
1N5408Contextual Info: 1N5400 thru 1N5408 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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1n54001n54082011/65/eu2002/96/ec+3 | |
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Contextual Info: KBP101G thru KBP107G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243 |
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kbp101gkbp107ge-3262432011/65/eu+3 | |
SchottkyContextual Info: BAT54W/AW/CW/SW Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on |
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bat54w/aw/cw/sw200mwot-323c/10s+2 | |