TSB 36 Search Results

TSB-36

Abstract: TSB36 TSB18 TSB75 TSB47
Contextual Info: •URGE TSB 6.8 THRU TSB 180 600 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMB PACKAGE BREAKDOWN VOLTAGE * SURGE PART NUMBER * V BR VOLTS NOM. IT mA WORKING PEAK REV. VOLTAGE (VRWM) VOLTS MAX. REV. LEAKAGE at VRWM dr) microamps MAX. PEAK REV. SURGE

Contextual Info: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT160 Unit : mm Weight : 22g typ. Package TSB-5PIN 1600V 45A • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 160 0264 ∼ ∼ 27 ∼ − 管理番号（例）

ecg5322

Abstract: ECG5326 ECG5344 ECG5324 ECG5313 ECG5342 ECG168 z43 diode ECG5330 ECG5328
Contextual Info: PH ILIPS E C G IN C B r id g e S4E D bbsa^sa 000720Û tsb h ec g R e c t i f i e r s silicon Single-Phase Pe ak Reverse Voltage (P R V Volts) |Q, A ve rage Rectified Forw ard Current (Am ps) 1A 100 1.5 A 2A 4A ECG166 200 ECG167 400 600 ECG5332 800 ECG5309

C14B

Abstract: PMC 1601 C128H c120h EELST PE64952 68HC11 PM4341 C04FH PM6541
Contextual Info: PMC-Sierra, Inc. PM6541 E1XC-EVBD TELECOM STANDARD PRODUCT PMC-930917 ISSUE 1 E1XC EVALUATION DAUGHTERBOARD PM6541 E1XC-EVBD E1XC EVALUATION DAUGHTERBOARD ISSUE 1: DECEMBER 1997 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000

C109H

Abstract: C03BH C13BH C125H C10BH PC834 C14AH C101h C05DH C111H
Contextual Info: PMC-Sierra, Inc. PM6541 E1XC-EVBD ENGINEERING DOCUMENT PMC-920247 ISSUE 3 E1XC EVALUATION DAUGHTERBOARD PM6541 E1XC-EVBD E1XC EVALUATION DAUGHTERBOARD ISSUE 3: DECEMBER 1997 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A

Contextual Info: Pin Descriptions Pin Assignments Bt8370 is packaged in an 80-pin Metric Quad Flat Pack MQFP . A pinout dia­ gram o f this device is illustrated in Figure I. Figure 2 details a Bt8370 Logic D ia­ gram. Pin labels, names, input/output functions, and descriptions are provided in

c12fh

Abstract: C052H C101H diode c12fh C115H c120h DUP C103 C13FH C117H C114 tsb
Contextual Info: PMC-Sierra, Inc. PM4541 T1XC-EVBD TELECOM STANDARD PRODUCT PMC-920314 ISSUE 2 T1XC EVALUATION DAUGHTERBOARD PM4541 T1XC-EVBD T1XC EVALUATION DAUGHTER BOARD ISSUE 2: DECEMBER 1997 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000

digital IIR Filter VHDL code

Abstract: verilog code for fir filter using DA vhdl code for 8-bit serial adder low pass Filter VHDL code low pass fir Filter VHDL code verilog edge detection 2d filter xilinx xilinx code for 8-bit serial adder 8 bit sequential multiplier VERILOG 8 bit fir filter vhdl code implementation of 16-tap fir filter using fpga
Contextual Info: SEMINAR SIGNAL PROCESSING with XILINX FPGAs Bruce Newgard N BITS WIDE FIR FILTER SAMPLE DATA X0 SUM X • K C0 X11 X • C1 X22 OUTPUT DATA X • C22 • • • • • • K SUMs K TAPS LONG X.D.S.P. 6OLGH1XPEHU  ;'63337 SIGNAL PROCESSING WITH XILINX FPGAs

5540a

Abstract: FPS 5038
Contextual Info: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. CX29503 Broadband Access Multiplexer BAM The CX29503 Broadband Access Multiplexer (BAM) is a highly integrated, cost-effective,

A19r

Abstract: IDT70T3509M 70T3509MS133 36MBIT PIPE 70T3509M 70T3539M
Contextual Info: HIGH-SPEED 2.5V PRELIMINARY 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access

A19R

Abstract: IDT70T3509M A19L BP-256 70T3509MS
Contextual Info: HIGH-SPEED 2.5V 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Š Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 4.2ns 133MHz (max.)

IDT70T3509M

Abstract: 70T3509MS133 A19R BP256
Contextual Info: HIGH-SPEED 2.5V 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 4.2ns 133MHz (max.)

Contextual Info: HIGH-SPEED 2.5V 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Š Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 4.2ns 133MHz (max.)

XC6200

Abstract: FIR FILTER implementation on fpga register based fifo xilinx 16X1 16X2 TMS320 XC4000 XC4000E XC7336-5 XC7354
Contextual Info: HOT APPLICATIONS: DSP & Telecommunications Data Buffer Design with RAM-based FPGAs Physical Interface Design with 5 ns EPLDs Filter Design with LUT-based FPGAs Telecommunications and DSP — 1 Copyright 1995 by Xilinx, Inc. All rights reserved. All trademarks are the property of the respective owners.

wd37c65b

Abstract: floppy controller stepper motor
Contextual Info: WD57C65 INTRODUCTION 1.0 INTRODUCTION 1.1 FEATURES 1.2 DESCRIPTION The W D57C65 Floppy Disk Subsystem Controller is an LSI device which incorporates all the func­ tional blocks that typically make up a floppy disk subsystem controller, such as the form atter/con­

A14L

Abstract: IDT70T3539M 70T3539MS133 70T3539M
Contextual Info: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Š Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.)

70V7589

Abstract: IDT70V7589 IDT70V7589S
Contextual Info: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks – 2 megabits of memory on chip

IDT70V3589

Abstract: 12864-K 70v3599
Contextual Info: Š HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS IDT70V3599/89S DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz) (max.)

A14L

Abstract: IDT70T3539M 70T3539M
Contextual Info: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.)

70V7599

Abstract: IDT70V7599 IDT70V7599S
Contextual Info: Š HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks – 4 megabits of memory on chip

A14L

Abstract: IDT70T3539M A18R 70T3539M
Contextual Info: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.)

70T3539M

Contextual Info: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.)

Contextual Info: HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS IDT70V3599/89S DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz) (max.)