TSAL Search Results
TSAL Datasheets (19)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| TSAL0001 | Microchip Technology | Equipment - Specialty, Test and Measurement, LOGIC ANALYZER USB 8CH 24MHZ | Original | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL0002 | Microchip Technology | Equipment - Specialty, Test and Measurement, LOGIC ANALYZER USB 16CH 100MHZ | Original | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL4400 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 3 mm (T-1) Package | Original | 82.8KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5100 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 82.95KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5300 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 83.58KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5300 | Vishay Intertechnology | EMITTER, IR 950NMEMITTER, IR 950NM; Radiant intensity:45mW/Sr; Angle, half:22(degree); Case style:T - 13/4; Current, If Vf:100mA; Current, If max:200mA; Current, peak pulse:1.5mA; Current, reverse leakage max:10uA; Diameter, | Original | 208.84KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5300-FSZ | Vishay Siliconix | High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs | Original | 295.02KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5300-GSZ | Vishay Siliconix | High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs | Original | 295.02KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6100 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 83.44KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6200 | Vishay | LED, INFRARED, GAAS, T-1 3/4 (TSAL6200) | Original | 585.11KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6200 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package | Original | 113.9KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6200 | Vishay Telefunken | GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package | Original | 83.63KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6400 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 77.61KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7200 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 82.96KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7300 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in ph 5 mm (T-1.75) Package | Original | 121.62KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7300 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH POWR 950NM 5MM 2 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7300 | Vishay Telefunken | GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 3-4) Package | Original | 84.74KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7400 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 77.51KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7600 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 81.34KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSAL Price and Stock
Vishay Intertechnologies TSAL6200IR transmitter; 5mm; 940nm; blue-grey,transparent; 210mW; 17°; THT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6200 | 21,499 | 1 |
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TSAL6200 | 74,328 | 57 |
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| TSAL6200 | 21,499 | 451 |
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TSAL6200 | Bulk | 3,500 | 18 Weeks | 4,000 |
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TSAL6200 | 38,325 |
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TSAL6200 | 74,368 | 18 Weeks | 1 |
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| TSAL6200 | 2 | 18 Weeks | 1 |
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TSAL6200 | Bulk | 23,953 | 5 |
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| TSAL6200 | Bulk | 482 | 1 |
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TSAL6200 | Bulk | 4,000 |
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TSAL6200 | 110 | 1 |
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TSAL6200 | 1,186 |
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| TSAL6200 | 233 |
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| TSAL6200 | 88 |
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TSAL6200 | 10,000 |
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TSAL6200 | 20 Weeks | 4,000 |
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Vishay Intertechnologies TSAL4400IR transmitter; 3mm; 940nm; transparent,grey; 160mW; 25°; THT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL4400 | 14,101 | 1 |
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TSAL4400 | 77,168 | 56 |
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| TSAL4400 | 14,155 | 14 |
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| TSAL4400 | 14,101 | 376 |
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TSAL4400 | Bulk | 1 |
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TSAL4400 | 11,429 |
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TSAL4400 | 77,194 | 10 Weeks | 1 |
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| TSAL4400 | 14,155 | 1 |
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| TSAL4400 | 27 | 10 Weeks | 1 |
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TSAL4400 | Bulk | 73,335 | 1 |
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| TSAL4400 | Bulk | 5,000 |
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TSAL4400 | Bulk | 9,000 | 1,000 |
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TSAL4400 | 2,342 |
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TSAL4400 | 920 |
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TSAL4400 | 5,000 |
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TSAL4400 | 12 Weeks | 5,000 |
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TSAL4400 | 11 Weeks | 5,000 |
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Vishay Intertechnologies TSAL6100IR transmitter; 5mm; 940nm; blue-grey,transparent; 40mW; THT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6100 | 3,497 | 1 |
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TSAL6100 | 136,695 | 65 |
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| TSAL6100 | 3,497 | 272 |
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| TSAL6100 | 3,188 | 49 |
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| TSAL6100 | 70 | 15 |
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| TSAL6100 | 65 | 48 |
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TSAL6100 | 36,022 |
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TSAL6100 | 136,722 | 18 Weeks | 1 |
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| TSAL6100 | 3,188 | 18 Weeks | 1 |
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| TSAL6100 | 70 | 1 |
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| TSAL6100 | 65 | 18 Weeks | 1 |
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TSAL6100 | Bulk | 99,795 | 1 |
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| TSAL6100 | Bulk | 4,000 |
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TSAL6100 | Bulk | 19,500 | 500 |
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TSAL6100 | 17,778 |
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TSAL6100 | 20 Weeks | 4,000 |
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TSAL6100 | 88,000 | 19 Weeks | 4,000 |
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TSAL6100 | 4,000 | 1 |
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Vishay Intertechnologies TSAL6100-AS12ZIR transmitter; 5mm; 940nm; blue-grey; 170mW; 10°; 1.35÷1.6VDC; THT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6100-AS12Z | 1,760 | 1 |
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TSAL6100-AS12Z | 1,760 | 305 |
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TSAL6100-AS12Z | 628 |
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TSAL6100-AS12Z | 4,000 | 19 Weeks | 1,000 |
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Vishay Intertechnologies TSAL6100-MS12IR transmitter; 5mm; 940nm; blue-grey; 170mW; 10°; 1.35÷1.6VDC; THT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6100-MS12 | 1,048 | 2 |
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TSAL6100-MS12 | 1,048 | 447 |
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TSAL6100-MS12 | 3,000 | 19 Weeks | 1,000 |
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TSAL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSAL6400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm |
Original |
tsal64002002/95/ec2002/96/ec2011/65/eu+1 | |
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Contextual Info: Tem ic TSAL4400 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 3 mm T -l Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
tsal4400d-7402504-mar-98 | |
TSAL5100 Vishay
Abstract: TSAL5100
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Original |
tsal5100d-7402520-may-99tsal5100 vishay | |
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Contextual Info: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal7600d-7402520-may-99 | |
TSAL7200Contextual Info: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs |
Original |
tsal7200d-7402520-may-99 | |
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Contextual Info: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm |
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tsal4400teft43002002/95/ec2002/96/ec+1 | |
TSAL6200Contextual Info: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
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tsal62002002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
tsal62002002/95/ec2002/96/ec2011/65/eu+2 | |
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Contextual Info: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal760018-jul-08 | |
TSAL7200Contextual Info: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
Original |
tsal72002002/95/ec2002/96/ec18-jul-08 | |
TSAL6100 application
Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
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Original |
tsal61002002/95/ec2002/96/ec18-jul-08+2 | |
08D diodeContextual Info: TSAL7600 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm iJ -V A Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
tsal7600d-74025ec-9808d diode | |
diode chn 940
Abstract: chn 940 CT-98
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OCR Scan |
tsal6200l6200d-74025ct-98+2 | |
TSAL5100Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package D escription TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
tsal5100d-7402521-sep-98 | |
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Contextual Info: TSAL5300 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal5300d-7402520-may-99 | |
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Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
tsal62002002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal640008-apr-05 | |
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Contextual Info: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal720008-apr-05 | |
TSAL6200Contextual Info: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal6200d-7402520-may-99 | |
81008
Abstract: TSAL5300
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Original |
tsal5300d-7402520-may-9981008 | |
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Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power |
Original |
tsal61002002/95/ec2002/96/ec2011/65/eu+1 | |
TSAL7400
Abstract: high power infrared led
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Original |
tsal74002002/95/ec2002/96/ec18-jul-08+1 | |
high power infrared led
Abstract: TSAL7600
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Original |
tsal76002002/95/ec2002/96/ec18-jul-08+1 | |
TSAL6100
Abstract: high power infrared led
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Original |
tsal61002002/95/ec2002/96/ec18-jul-08+1 | |