TS8542VA Search Results
TS8542VA Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TS8542VA | Vishay Semiconductor Opto Division | Optoelectronics - Infrared, UV, Visible Emitters - IR EMITTER SMD | Original | 102.99KB |
TS8542VA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
ts8542va2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
ts8542va2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
ts8542va2011/65/eu2002/96/ec2002/95/ec+1 | |
|
Contextual Info: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
ts8542va2002/95/ec2002/96/ec11-mar-11 | |
|
Contextual Info: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
ts8542va2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare |
Original |
vmn-sg2200-1502 |