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    Infineon Technologies AG

    Infineon Technologies AG BTS121A

    TEMPFET Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA BTS121A 1,202
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    Chip 1 Exchange BTS121A 339
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    Infineon Technologies AG BTS121A TO220-3

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    Chip 1 Exchange BTS121A TO220-3 171
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    Infineon Technologies AG BTS121ANKSA1

    Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian BTS121ANKSA1 8,468
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    TS121A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    100TFD

    Abstract: bts121a
    Contextual Info: SIEMENS TEMPFET BTS 121A Features • N channel • Logic level • Enhancement mode • Temperature sensor with thyristor characteristic • The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type v DS h ^DS on Package Ordering Code BTS 121A


    OCR Scan     		o-220abc67078-s5010-a2ts121a100tfd+1bts121a PDF