TS 114A Search Results

ic vertical la 78141

Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Contextual Info: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices

mabuchi rs-555ph-3255

Abstract: BI802-001A MDL-BDC RS-555PH-3255 MABUCHI RS-540SH Mabuchi
Contextual Info: Stellaris Brushed DC Motor Control Reference Design Kit User ’s Manual RDK-BDC-05 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.

transistor 45 f 122

Abstract: Transistor AC 51 mos 3021 TRIAC 136 tlp 122 634 transistor transistor ac 127 TRANSISTOR transistor 502 transistor f 421
Contextual Info: Page "N" : Technical Data is not included in this Data Book. 6 . D a ta S h ee ts 6-1 Recommended Devices for New Design Type 4 N 2 5 Short * 4 N 2 5 A (Short) * 4 N 2 6 (Short) * 4 N 2 7 (Short) * 4 N 2 8 (Short) 4 N 2 9 (Short) * 4 N 2 9 A (Short) * 4 N 3 0 (Short)

74AHC245

Abstract: 74AHC245D 74AHC245PW 74AHCT245 74AHCT245D
Contextual Info: P hilips S em ico n d uctors P roduct sp ecification Octal bus transceiver; 3-state IN P U TS IN P U T S /O U T P U T S OE DIR L L inputs L H inputs < ii m • ESD protection: HBM E IA /JE S D 22-A 114-A e xceeds 2 0 0 0 V MM E IA /JE S D 22-A 115-A e xceeds 200 V

TMM2114AP-15

Abstract: TMM2114AP-12 TMM2114AP12 TMM2114AP TMM2114AP15
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 1024 WORD x 4 BIT STATIC RAM T M M 2 I I 4 A P - 1 2 T M M 2 I I 4 A P - 1 5 DESCRIPTION The T M M 2 114A P is a 4 ,0 9 6 b its s ta tic ra n d o m s u ita b le f o r use in m ic r o c o m p u te r p e rip h e ra l m e m o ry access m e m o ry o rg a n iz e d as 1 0 2 4 w o rd s b y 4 b its and

BTS114A

Contextual Info: SIEMENS TEMPFET BTS114A Features • N channel • Enhancement mode • Temperature sensor with thyristor characteristic • The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type v DS /d ^DS<on Package Ordering Code TS 114A 50 V 17 A 0.10 n

WCL 209

Abstract: ltzt
Contextual Info: as DUAL JK NEGATIVE EDGE-TRIGGERED FLIP-FLOP DESCRIPTION The T54LS/T74LS114/114A offer common clock and common clear inputs and individual J, K, and set inputs. These monolithic dual flip-flops are de­ signed so that when the clock goes HIGH, the in­ puts are enabled and data will be accepted. The

MM2114

Abstract: TMM2114AP-15 TMM2114AP12 TMM2114AP TMM2114AP-12 MM2114AP-12
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS T M M 2 I I4 A P - I2 T M M 2 I I4 A P - I 5 1024 WORD x 4 BIT STATIC RAM DESCRIPTION The T M M 2 114A P is a 4 ,0 9 6 b its s ta tic ra n d o m s u ita b le f o r use in m ic r o c o m p u te r p e rip h e ra l m e m o ry access m e m o ry o rg a n iz e d as 1 0 2 4 w o rd s b y 4 b its and

BTS114

Contextual Info: SIEMENS TEMPFET BTS114 Not for new design Replacement: TS 114A • N channel • Enhancement mode • Temperature sensor with thyristor characteristic • The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints (see chapter Technical Information)

CDFP2-F10

Abstract: M38510/10101 m38510/11401 GDFP1-F10 E43 marking MIL-STD-883 method 5003 macy1-x8
Contextual Info: INCH-POUND MIL-M-38510/114B 20 August 2003 SUPERSEDING MIL-M-38510/114A 09 November 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON Reactivated after 20 August 2003 and may be used for either new or existing design acquisitions.

t114a

Abstract: 1t4a T54LS/T74LS114/114A
Contextual Info: S G K ? C m Î i S-THOnSON $ 1 ÎM 07E M D | 7^5^53? 0 UJi hü 31 4 | LOW POWER SCHOTTKY INTEGRATED CIRCUITS i l Ì T 7 4 L S t1 4 |M 67C 1 6 1 6 7 DUAL JK NEGATIVE EDGE-TRIGGERED FLIP-FLOP DESCRIPTION The T54LS/T74LS114/114A offer common clock and common clear inputs and individual J, K, and

5N 3011

Contextual Info: MIL-M—38510/114A 9 November 1979 SUPERSEDING MIL-M-38510/114 25 April 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all De­ partments and Agencies of the Department of Defense.

ts 114A

Abstract: SiEMENS PM 350 92
Contextual Info: SIEMENS TS 114A TEMPFET • • • • N channel Enhancem ent mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Inform ation Type

5N 3011

Abstract: VID 200-12 cd 4003 nasa group N15Y 1HA 104
Contextual Info: MIL—M—38510/114A 9 November 1979 SUPERSEDING MIL-M-38510/114 25 April 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all Departroents and Agencies of the Department of Defense.

p114a

Abstract: TLR113AP tlg113ap TLY113 TLR113 114AP TLG114AP TLR113A ts 114A TLG114A
Contextual Info: TOSHIBA TLD 113P.TLD 113AP .TLD 114P.TLD 114AP TOSHIBA LED LAMP TLG 113A P, TLG 114A P, T L 0 1 1 3 A P , T L 0 1 1 4 A P T L R 11 3A P , T L R 1 1 4 A P , T L S 1 1 3 P , T L S 1 1 4 P T LU R 113P, TLU R 114P, TLY 113A P, TLY 114A P PANEL CIRCUIT INDICATOR

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

Contextual Info: RI-I02-114A-01, RI-I02-114B-01 www.ti.com SCBS820 – DECEMBER 2005 Tag-it HF-I STANDARD TRANSPONDER INLAYS LARGE RECTANGLE FEATURES APPLICATIONS • • • • • • • • • • ISO/IEC 15693-2, -3; ISO/IEC 18000-3 Compliant 13.56-MHz Operating Frequency

Contextual Info: RI-I17-114A-S1 www.ti.com SCBS830 – DECEMBER 2005 Tag-it HF-I PRO STANDARD TRANSPONDER INLAYS CD FEATURES APPLICATIONS • • • • • • • • • • • ISO/IEC 15693-2, -3; ISO/IEC 18000-3 Compliant 13.56-MHz Operating Frequency 256-Bit User Memory in 8-Bit x 32-Bit Blocks

RI-I17-114A-01

Contextual Info: RI-I17-114A-01 www.ti.com SCBS819 – DECEMBER 2005 Tag-it HF-I STANDARD TRANSPONDER INLAYS CD FEATURES APPLICATIONS • • • • • • • • • • ISO/IEC 15693-2,-3; ISO/IEC 18000-3 Compliant 13.56-MHz Operating Frequency 256-Bit User Memory in 8-Bit x 32-Bit Blocks

Contextual Info: RI-I02-114A-01, RI-I02-114B-01 www.ti.com SCBS820 – DECEMBER 2005 Tag-it HF-I STANDARD TRANSPONDER INLAYS LARGE RECTANGLE FEATURES APPLICATIONS • • • • • • • • • • ISO/IEC 15693-2, -3; ISO/IEC 18000-3 Compliant 13.56-MHz Operating Frequency

Contextual Info: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage

Contextual Info: RI-I11-114A-01, RI-I11-114B-01 www.ti.com SCBS828 – DECEMBER 2005 Tag-it HF-I STANDARD TRANSPONDER INLAYS SQUARE FEATURES APPLICATIONS • • • • • • • • • • ISO/IEC 15693-2, -3; ISO/IEC 18000-3 Compliant 13.56-MHz Operating Frequency

RI-I02-114B-01

Contextual Info: RI-I02-114A-01, RI-I02-114B-01 www.ti.com SCBS820 – DECEMBER 2005 Tag-it HF-I STANDARD TRANSPONDER INLAYS LARGE RECTANGLE FEATURES APPLICATIONS • • • • • • • • • • ISO/IEC 15693-2, -3; ISO/IEC 18000-3 Compliant 13.56-MHz Operating Frequency

Contextual Info: RI-I17-114A-01 www.ti.com SCBS819A – DECEMBER 2005 – REVISED APRIL 2010 Tag-it HF-I STANDARD TRANSPONDER INLAYS CD Check for Samples: RI-I17-114A-01 FEATURES 1 • • • • • 2 ISO/IEC 15693-2,-3; ISO/IEC 18000-3 Compliant 13.56-MHz Operating Frequency