TRW RF TRANSISTOR Search Results

CA2850R

Abstract: trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ
Contextual Info: JL T R ü ELEK CMPNT/ R F DË| 0025054 GOOBTIO 4 | RF Devices Division TRW Electronic Components Group T CA2850R - " 7 * - 0 9 - 0 1 CA2850RThin Film RF Linear Hybrid Amplifier All Gold Monometallic) Metallization System Featuring Gold Transistor Die with Diffused Emitter

trw RF POWER TRANSISTOR

Abstract: trw rf transistor
Contextual Info: T BFP181T/BFP181TW/BFP181 TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W

TRW2001

Abstract: TRW2003 trw 2015 TRW2020 trw 2001 TRW201 TRW2010 TRW MICROWAVE trw rf transistors TRW2005
Contextual Info: M OTORCLA SC XSTRS/R F 12E D | t>Bt75Sll Ü0ÖÖ372 0 | T MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1 to 2.3 GHz frequency range.

RF2131

Abstract: TA0013 trw rf transistor HBT transistor
Contextual Info: TA0013
 TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier        RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on revolutionary HBT Heterojunction Bipolar Transistor technology.

TPV 3100

Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Contextual Info: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must

trw RF POWER TRANSISTOR

Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
Contextual Info: TA0012
 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier       
 efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key

BD291

Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22

trw RF POWER TRANSISTOR

Abstract: C33825 trw rf transistor trw 131* RF POWER TRANSISTOR TRW mmic HBT transistor RF2152 TA0032 POUT315 3.5V HBT MMIC Amplifier
Contextual Info: TA0032
 TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets      
    The RF2152 is the latest addition to a family of power amplifiers introduced by RF Micro Devices RFMD utilizing GaAs HBT technology. This commercially proven

LT 5224 diode

Abstract: lt 5224 Diode LT 5224 0PI3152 0PI3252 OPI3152 OPI3252
Contextual Info: OPTEK TECHNOLOGY INC ObE D | h7^flSÛ0 0000250 3 | 1987 Cost Saver Product! TRW for morB information! Optoelectronics Division T R W Electronic Com ponents Group # ÊXW W Ca|, Product Bulletin 5224 January 1985 ‘ Optically Coupled Isolators Types OPI3152, 0PI3252

c4231

Abstract: c4231 transistor trw RF POWER TRANSISTOR THC4231 trw rf transistor THC4231X1B THC4231X1V
Contextual Info: JH AT THC4231 ttxw w Wide Bandwidth Fast Settling Operational Amplifier 165MHz Closed Loop Bandwidth The THC4231 is a wide bandwidth fast settling opera­ tional amplifier designed specifically for high-speed, lowgain applications. The op amp design is based on current

Contextual Info: THC4231 TR Yw W ide Bandwidth Fast Settling Operational Amplifier 165M Hz Closed Loop Bandwidth The THC4231 is a wide bandwidth fast settling opera­ • 1mV Input Offset Voltage, 10^V/°C Drift tional amplifier designed specifically for high-speed, lowgain applications. The op amp design is based on current

TDC1014

Abstract: TDC1046 Tdc1016 trw TIDC1014 trw resistor TDC1016 1016B7C 1016B7 capacitor 220 microfarad R20 marking
Contextual Info: TDC1014 Use T D C 10 4 6 for N e w Designs Monolithic Video A/D Converter Features 6-Bit, 25M SPS • 6-Bit Resolution • 1/4 LSB Linearity The TRW TDC1014 is a 25 MegaSample Per Second MSPSI full- parallel (flash analog-to-digital converter, capable of

ic 7500B

Abstract: 7500B diode GG 14 TRW POWER MW131 OPI2100 QPI2100
Contextual Info: OPTEK TECHNOLOGY INC DbE D g t.7TflS00 00DD253 Optoelectronics Division 1 9 8 7 C o s t S a v e r P r o d u c t! C a ll T R W fo r m o re in fo rm a tio n ! T R W Electronic Components Group Product Bulletin 5198_ January 1985 O p tic a lly Coupled Isolators

1016B7

Abstract: 1016B7C 10 microfarad 50v capacitor TDC1016B7AX 1 microfarad tantalum capacitor
Contextual Info: TRVw TDC1016 Video Speed D/A Converter Features 10-Bit, 2 0 M s p s • 20Msps Conversion Rate The TDC1016 is a bipolar monolithic digital-to-analog • 8, 9, Or 10-Bit Linearity • Voltage Output, No Amplifier Required converter which can convert digital data into an analog

Diode 10Z

Abstract: 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 CNY17
Contextual Info: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R

4N2b

Abstract: h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY17 CNY47 H11A2 H11A3
Contextual Info: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R

TRANSISTOR ww1

Abstract: 2U72 marking code ww1 ims g171 0171N6C RS-170 impedance match Diode marking WW1 diode ww1 77 TDC4611 LM1201
Contextual Info: TMC0171, TMC0176 T R m w Color Palette with Triple 6-Bit DAC The TMC0171 and TMC0176 are triple 6-bit video DACs Features with 256 x 18 RAM look-up tables and microprocessor interfaces. The devices were designed specifically for • Pixel Rates Of 0 to 80M Hz

TDC1016

Abstract: 1016B7 yuma capacitor, 22 microfarad 50v Tdc1016 trw capacitor 220 microfarad R20 marking 1N4001 HA2539 ECL2516
Contextual Info: TDC1016 Video Speed D/A Converter 10-Bit, 20Msps l A Ü Features • 20Msps Conversion Rate The TDC1016 is a bipolar monolithic digital-to-analog converter which can convert digital data into an analog voltage at rates up to 20Msps Megasamples Per Second . The device includes an input data register and

BD561

Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223

SDT710

Abstract: DTS723 DTS708 STI660 DTS-714 DTS-723 PT8810 IR708 DTS411 dts710
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max V BR CEO (A) Of) PD ICBO Max hFE »T ON) Min (Hz) (A) '<CE)Mt Max (s) Max (Ohms) Top«r Max Package Style CO Devices 20 Watts or More, (Cont'd) I. . . .5 10 15 20 2SC3506 2SC3533

TDC1007J

Abstract: tdc1007 IC STU 404 1007J TRW tdc stu 407 siemens rs 1007 trw 1007 clifford relay TDC-1007J
Contextual Info: Harris Semiconductor No. AN548.1 Harris Linear November 1996 A Designers Guide for the HA-5033 Video Buffer Author: Carl Wolfe Introduction Harris Semiconductor is an industry leader in the high speed, wideband, monolithic operational amplifier market. Due to the high performance of Harris products, designers in

2sC2285

Abstract: Digitron 12 nec sdt411 IR665 DTS423 trw rf transistors 2SC3480 DTS-423
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) Of) hFE fT ICBO Max Max k)N Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max Package Style re) Devices 20 Watts or More, (Cont'd) 5 10 PTC411P(A) SDT411 SDT411

2N5596

Abstract: motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors
Contextual Info: Order this document by AN1033/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1033 MATCH IMPEDANCES IN MICROWAVE AMPLIFIERS and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.