TRUTH TABLE STATIC RANDOM ACCESS MEMORY SRAM Search Results

BYG-100

Abstract: IDT70P269 BYG100 7146 BY100- 70P259 BY100 70P24 70P25
Contextual Info: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM Š IDT70P269/259/249L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location Both ports configurable to standard SRAM or timemultiplexed address/data interface

qml-38535

Abstract: M38510-24502BVA as 15-f HM1-6514S8
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. 67268. 1987 OCT 23 M. A. Frye

Contextual Info: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM Š IDT70P269/259/249L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location Both ports configurable to standard SRAM or timemultiplexed address/data interface

IDT70P245

Contextual Info: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM Š IDT70P265/255/245L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location One port with dedicated time-muliplexed address/data ADM interface

BY100

Abstract: 245l A13R-A0R 70P25
Contextual Info: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM Š IDT70P265/255/245L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location One port with dedicated time-muliplexed address/data ADM interface

HT6116-7LL

Abstract: Volt, SPDM, CMOS SRAM CMOS SPDM Process HT6116-70 HT6116 -7LL HT6264-70 Holtek 0.8um, CMOS sram
Contextual Info: HT6116-70 2K x 8 Bit SRAM Features • • • • • • • Single 5V power supply Low standby and operating power – Standby: 5µW Typ. – Operating: 400mW (Typ.) 70ns (Max.) high speed access time Neither external clock nor refreshing required •

NTE2147

Contextual Info: NTE2147 Integrated Circuit 4K Static Random Access Memory SRAM Description: The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative

tD014

Abstract: CDIP2-T18 GDIP1-T18 001050b A81024
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M0-DA C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. no. 67268. 1987 OCT 23 M. A. Frye

Contextual Info: FM28V102A 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes

FPT-100P-M01

Abstract: mcl m01 94 MB82VP036
Contextual Info: February 1994 Edition 1.0 ADVANCE INFO. FUjlTSU DATASHEET MB82VP036 CMOS 32K x 36 SYNCHRONOUS SRAM CMOS 32768 WORDS BY 36-BIT SYNCHRONOUS STATIC RANDOM ACCESS MEMORY The Fujitsu MB82VP036 is a 1M bit CMOS Synchronous Static Random Access Memory SSRAM containing 1,179,648 memory cells accessible in a 36-bit

Contextual Info: FM28V102A 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: MOSEL MS6M 8512 PRELIMINARY 512K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • 4Mb SRAM module compatible with JEDEC standard pinout for 512k x 8 SRAM The Mosel MS6M8512 is a 4 Megabit 4,194,304 bits static random access memory module organized as 512K

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B81 15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM - 256K Words x 1 Bit BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B81 is a static random access memory organized as 262,144 words x 1 bit and fabricated with a CMOS silicon gate process. BiCMOS technology is used in

Contextual Info: September 2006 AS7C31025C 3.3V 128K X 8 CMOS SRAM Center power and ground Features • Industrial and commercial temperatures • Organization: 131,072 x 8 bits • High speed - 10/12 ns address access time - 5 ns output enable access time • Low power consumption via ship deselect

TS280-A89Z

Contextual Info: TS280—A89Z December 1989 FUJITSU DATA SHEET • MB82B71-15/-20 64K BIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B71 is a 65,536 words by 1 bits static random access memory fabricated with a

Contextual Info: PRELIMINARY FM28V102 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes

HT6264-70

Contextual Info: HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • • • • • Single 5V power supply Low power consumption – Operating: 200mW Typ. – Standby: 5µW (Typ.) 70ns (Max.) high speed access time Memory expansion by pin OE • Common I/O using tri-state outputs

Contextual Info: November 1989 Edition 1.0 FUJITSU DATASHEET MB85420-40/-50 256K X 8 CMOS SRAM MODULE CMOS 262,144 WORDS x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85420 is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 60-pin plastic board.

HT6264-70

Abstract: 8k8 rom
Contextual Info: HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • • Operating voltage: 5V Low power consumption – Operation: 200mW typ. – Standby: 5µW (typ.) 70ns (max.) high speed access time Memory expansion by pin OE • • • • Pin-compatible with standard 8K×8

HT62

Abstract: 32K8 32K-8-bit
Contextual Info: HT62256-7L CMOS 32Kx8-Bit SRAM Features • • • • • • • • • Single 5V power supply Low power consumption – Operating: 300mW Typ. – Standby: 5µ W (Typ.) 70ns (Max.) high speed access time Power down mode using pin CS Memory expansion using pin OE

HT6116 -7LL

Abstract: HT6116-7LL HT6116 SRAM CMOS SPDM Process Volt, SPDM, CMOS Holtek 0.8um, CMOS sram
Contextual Info: HT6116-7LL CMOS 2Kx8-Bit SRAM Features • • • • • • • • • Single 5V power supply Low power consumption – Operating: 180mW Typ. – Standby: 5µ W (Typ.) 70ns (Max.) high speed access time Power down by pin CS Memory expansion by pin OE

Contextual Info: MOSEL MS6134 4K X 8 CMOS Dual Port SRAM FEATURES DESCRIPTION • High-speed-35/45/55ns The M OSEL M S6134 is a 32,768 bit dual port static random access memory organized as 4,096 words by 8 bits allowing each port to independently access any location in memory. The M S6134 is ideal for systems that

Contextual Info: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically

Contextual Info: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically