TRENCH MOS SCHOTTKY RECTIFIER Search Results
TRENCH MOS SCHOTTKY RECTIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CUHS15S40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H | Datasheet | ||
| CUHS20F30 |
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Schottky Barrier Diode (SBD), 30 V, 2 A, US2H | Datasheet | ||
| CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H | Datasheet | ||
| CLS10F40 |
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Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E | Datasheet | ||
| CUHS20F60 |
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H | Datasheet |
TRENCH MOS SCHOTTKY RECTIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSP15U100S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1309033 | |
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Contextual Info: TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311020 | |
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Contextual Info: TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033 | |
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Contextual Info: TSP10U60S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1311023 | |
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Contextual Info: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401021 | |
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Contextual Info: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1310024 | |
10U45Contextual Info: TSP10U45S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 10U45 | |
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Contextual Info: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311001 | |
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Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 | |
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Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 | |
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Contextual Info: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311002 | |
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Contextual Info: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401022 | |
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Contextual Info: TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30H120C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401025 | |
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Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311017 | |
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marking b14 diodeContextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability |
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TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 marking b14 diode | |
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Contextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability |
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TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1311013 | |
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Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
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TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309049 | |
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Contextual Info: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006 | |
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Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
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TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309046 | |
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Contextual Info: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
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TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307012 | |
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Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
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TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307013 | |
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Contextual Info: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
Original |
TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309048 | |
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Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
Original |
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010 | |
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Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
Original |
TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1310028 | |