TRENCH MOS Search Results

QS6U24

Abstract: TSMT6 QS6M4
Contextual Info: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 2.9 (6) (4) (3) (5) (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) The QS6U24 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET

FGH15T120

Contextual Info: FGH15T120SMD 1200 V, 15 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum

Contextual Info: FGH25T120SMD 1200 V, 25 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum

diode TA 20-08

Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
Contextual Info: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power

so8 footprint

Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Contextual Info: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon

ISL9N2357D3ST

Abstract: N2357 n2357d
Contextual Info: ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET UltraFET® Trench UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching

P-Channel MOSFET code 1A

Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

igbt 40a 600v

Contextual Info: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate

Schottky Diode 20V 5A

Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

Contextual Info: FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.

tea1761

Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
Contextual Info: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220

Contextual Info: SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features • Max. RDS ON = 150m at VGS = 10V, ID = 2A  Low gate charge: Qg=18nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested

TO220 package

Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
Contextual Info: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard

Contextual Info: TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

10U45

Contextual Info: TSP10U45S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSP15U100S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability