Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRAY FBGA 84 Search Results

    TRAY FBGA 84 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    U77A11282021
    		Amphenol Communications Solutions 1X1 CAGE FOR H/S NI TRAY PDF
    10067847-001TLF
    		Amphenol Communications Solutions 10067847-001TLF-SD CARD TRAY PACKAGING PDF
    U77A11282001
    		Amphenol Communications Solutions 1X1 CAGE FOR H/S NI TRAY PDF
    U77A11181001
    		Amphenol Communications Solutions SFP CAGE 1X1 TIN TRAY PDF
    U77A61042001
    		Amphenol Communications Solutions SFP 1X6 CAGE NI TRAY PDF

    TRAY FBGA 84 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    daewon tray

    Abstract: Daewon T0809050 daewon tray 1F1-1717-AXX strapack s-669 DAEWON tray 48 DAEWON JEDEC TRAY DAEWON FBGA KS-88085 1F1-1717-AXX tray bga
    Contextual Info: Guidelines for Handling J-Lead, QFP, BGA, FBGA, and Lidless FBGA Devices AN-071-5.0 Application Note This application note provides guidelines for handling J-Lead, Quad Flat Pack QFP , and Ball-Grid Array (BGA, including FineLine BGA [FBGA] and lidless FBGA


    Original     		AN-071-5 Hand-0444 daewon tray Daewon T0809050 daewon tray 1F1-1717-AXX strapack s-669 DAEWON tray 48 DAEWON JEDEC TRAY DAEWON FBGA KS-88085 1F1-1717-AXX tray bga PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    TSG 3255

    Abstract: ALLOY leadframe C7025 leadframe C7025 tsg 271 C7025 certificate c7025
    Contextual Info: ‹ Index INDEX A alloy 42 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10 B boxes intermediate see Q-PACK boxes outer (see outer container boxes) tubes, protection from . . . . . . . . . . . . . . . . . . . . . . . . . . 7-2


    Original     		PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    K4S161622H-UC60

    Contextual Info: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History


    Original     		K4S161622H 183MHz 166MHz K4S161622H-UC60 PDF

    circuit diagram of bluetooth headphone

    Abstract: IC Speakerphone philips stereo amplifier 384 CS42L73 JEDEC JESD51-8 JESD51-9 CS42L73-CRZR dac 3440 CS42L73-CWZ
    Contextual Info: CS42L73 Ultra Low Power Mobile Audio and Telephony CODEC Product Overview For the full datasheet, visit System Features  Native no PLL required Support for 6/12/24 www.cirrus.com/codec-datasheets/CS42L73  Stereo ADC  Dual Analog or Digital MIC Support


    Original     		CS42L73 com/codec-datasheets/CS42L73 circuit diagram of bluetooth headphone IC Speakerphone philips stereo amplifier 384 CS42L73 JEDEC JESD51-8 JESD51-9 CS42L73-CRZR dac 3440 CS42L73-CWZ PDF

    national semiconductor pb-free suffix

    Abstract: SB70A SQA40b TS5B-24 LM431ACM3X IEC 384 14 250 volts LM2734XMK UFBGA 176 datasheet M08A M14A
    Contextual Info: Surface Mount - Tape & Reel • General Description Tape-and-Reel is one of the primary methods for shipping surface mount devices. This system simplifies the handling of semiconductors for automated circuit board assembly systems. Tape-and-Reel holds hundreds-to-thousands of surface mount devices so that pick-and-place machines have to


    Original     		EIA-481 national semiconductor pb-free suffix SB70A SQA40b TS5B-24 LM431ACM3X IEC 384 14 250 volts LM2734XMK UFBGA 176 datasheet M08A M14A PDF

    tsop-ii 66 JEDEC TRAY

    Contextual Info: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K4D261638F 128Mbit 183MHz 166MHz tsop-ii 66 JEDEC TRAY PDF

    MTfc8g

    Abstract: MTFC32GJTED regulator 2gb smd MTFC4GMTEAWT MTFC4GMTEA-WT MTFC16
    Contextual Info: Micron Confidential and Proprietary 2GB, 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC2GMTEA-WT, MTFC4GMTEA-WT, MTFC8GLTEA-WT, MTFC16GLTAM-WT, MTFC16GLTDV-WT, MTFC16GJTEC-WT, MTFC32GLTDM-WT, MTFC32GLTDI-WT, MTFC32GJTED-WT, MTFC64GJTEF-WT


    Original     		MTFC16GLTAM-WT, MTFC16GLTDV-WT, MTFC16GJTEC-WT, MTFC32GLTDM-WT, MTFC32GLTDI-WT, MTFC32GJTED-WT, MTFC64GJTEF-WT 169-ball 09005aef8495885a n2m400 MTfc8g MTFC32GJTED regulator 2gb smd MTFC4GMTEAWT MTFC4GMTEA-WT MTFC16 PDF

    "MATERIAL DECLARATION SHEET"

    Abstract: K7I321882M-FC16 marking 6J reset 7KB NC
    Contextual Info: K7I323682M K7I321882M 1Mx36 & 2Mx18 DDRII CIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V.


    Original     		K7I323682M K7I321882M 1Mx36-bit, 2Mx18-bit 1Mx36 2Mx18 378KB 731KB K7I321882M-FC160 K7I321882M-FC250 "MATERIAL DECLARATION SHEET" K7I321882M-FC16 marking 6J reset 7KB NC PDF

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Contextual Info: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K PDF

    S29WS256P

    Abstract: S29WS-P S73WS-P
    Contextual Info: S73WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Mobile SDRAM on Shared Bus S73WS-P based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S73WS-P S29WS256P S29WS-P PDF

    S71WS512PD0

    Abstract: S29WS512P S29WS-P S71WS512PC0 S71WS512PC0HF3 S71WS512PD0HF3 S71WS-P
    Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S71WS-P S71WS512PD0 S29WS512P S29WS-P S71WS512PC0 S71WS512PC0HF3 S71WS512PD0HF3 PDF

    S25FL256

    Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
    Contextual Info: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:


    Original     		128Mb 256Mb 512Mb 43715C S25FL256 S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K PDF

    TRAY FBGA 11X13

    Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
    Contextual Info: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S72MS-P TRAY FBGA 11X13 S72MS512PE0HF94V MCP NAND sDR BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE PDF

    L1-L10

    Abstract: MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S71WS-N S29WS128N S29WS256N S71WS128NB0
    Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		S71WS-N S71WS-N L1-L10 MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S29WS128N S29WS256N S71WS128NB0 PDF

    S29WS128N

    Abstract: S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N S71WS-N marking YJ AM
    Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S71WS-N S71WS-N S29WS128N S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N marking YJ AM PDF

    S71WS128PB0

    Abstract: S71WS256PC0HH3YR0 S71WS512PD0HF3 H-EE 32 S71WS512PD0HH3 S71WS256 TRAY FBGA 11X13
    Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S71WS-P S71WS128PB0 S71WS256PC0HH3YR0 S71WS512PD0HF3 H-EE 32 S71WS512PD0HH3 S71WS256 TRAY FBGA 11X13 PDF

    16M NtRAM samsung

    Abstract: 9p marking
    Contextual Info: K7N643645M K7N641845M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAMTM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz


    Original     		K7N643645M K7N641845M 2Mx36 4Mx18-Bit 4Mx18 200MHz) K7N6436 SG200602847 16M NtRAM samsung 9p marking PDF

    K7Q161862B-EC16

    Abstract: ntram
    Contextual Info: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		K7Q163662B K7Q161862B 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 K7Q161862B-EC16 ntram PDF

    S71WS256PC0HH3YR

    Abstract: SWM064D133S1R S71WS256Pc0 S71WS256PC0HH S71WS256PC0HH3 SWM032D S71WS256PC S71WS512PD0HH3Y S71WS256PD
    Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S71WS-P S71WS256PC0HH3YR SWM064D133S1R S71WS256Pc0 S71WS256PC0HH S71WS256PC0HH3 SWM032D S71WS256PC S71WS512PD0HH3Y S71WS256PD PDF

    s71ws512pd0hh3yr

    Abstract: SWM064D133S1R S71WS128PB0 S71WS512PD0HH3Y S71WS256Pc0 SWM032D133S1R S71WS256PC S71WS512PD0 S71WS256PC0HH3YR S29WS128P
    Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S71WS-P s71ws512pd0hh3yr SWM064D133S1R S71WS128PB0 S71WS512PD0HH3Y S71WS256Pc0 SWM032D133S1R S71WS256PC S71WS512PD0 S71WS256PC0HH3YR S29WS128P PDF

    FND pinout diagram

    Abstract: ws256n spansion FND115 S29WS-N S30MS-P S75WS256NDF S75WS256NEG S75WS-N A0-A22 NK 5-4
    Contextual Info: S75WS-N Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Flash or 1 Gb ORNAND Flash Data Sheet PRELIMINARY


    Original     		S75WS-N 16-bit) FND pinout diagram ws256n spansion FND115 S29WS-N S30MS-P S75WS256NDF S75WS256NEG A0-A22 NK 5-4 PDF

    K7Q163662B-FC16

    Abstract: date code body marking samsung
    Contextual Info: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		K7Q163662B K7Q161862B 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 K7Q163662B-FC16 date code body marking samsung PDF