TRAS 36NS Search Results

KM48S2020A

Abstract: km48s2020at K/A8-A10 050S53 1994 sdram 002G5 D02g DD2054 samsung AND 1994 AND sdram
Contextual Info: PRELIMINARY * KM48S2020A CMOS SDRAM 2M X 8 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEA TU RES - JED EC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse RAS. - W CBR cycle with address key programs. •Latency Access from column address

KM44S4020AT10

Abstract: KM44S4020A
Contextual Info: PRELIMINARY KM44S4020A 4M X CMOS SDRAM 4 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES - JEDEC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse ftAS. - WCBR cycle with address key programs. • Latency Access from column address

PQ62

Contextual Info: IBM11M4720D4M x 7212/11, 5.0V, AuMMDL08DSU-011033723. IBM11M4720D 4M x 72 DRAM MODULE Features • Optimized for byte-write parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx72 Fast Page Mode DIMM

IBM01178052M

Abstract: IBM0117805B2M IBM0117805M2M IBM0117805P2M
Contextual Info: IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization

4221 transistor datasheet

Abstract: 4221
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM

HYM7V641601

Abstract: HYM7V641630
Contextual Info: 16Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V641600/ HYM7V641601/ HYM7V641630/ HYM7V641631 DESCRIPTION The HYM7V641600/ 641601/ 641630/ 641631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K

HYM7V641601

Contextual Info: 16Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V641600/ HYM7V641601/ HYM7V641630/ HYM7V641631 DESCRIPTION The HYM7V641600/ 641601/ 641630/ 641631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K

4221 transistor datasheet

Abstract: IBM01178052M IBM0117805B2M IBM0117805M2M IBM0117805P2M
Contextual Info: IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization

HYM7V641601

Abstract: HYM7V641630
Contextual Info: 16Mx64 bit SDRAM Unbuffered DIMM K-Series based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V641600/ HYM7V641601/ HYM7V641630/ HYM7V641631 DESCRIPTION The HYM7V641600/ 641601/ 641630/ 641631 K-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 16Mx4 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K

HYM7V64400

Abstract: HYM7V64401 byte24 HYM7V64431
Contextual Info: 4Mx64 bit SDRAM SO DIMM Q-Series based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64400/ HYM7V64401/ HYM7V64430/ HYM7V64431 DESCRIPTION The HYM7V64400/ 64401/ 64430/ 64431 Q-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of four 4Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit

hym7v64801

Contextual Info: 8Mx64 bit SDRAM SO DIMM Z-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 DESCRIPTION The HYM7V64800/ 64801/ 64830/ 64831 Z-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eight 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit

hym7v64801

Contextual Info: 8Mx64 bit SDRAM Unbuffered DIMM R-Series based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 DESCRIPTION The HYM7V64800/ 64801/ 64830/ 64831 R-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eight 4Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit

Contextual Info: 16Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A1600/ HYM7V72A1601/ HYM7V72A1630/ HYM7V72A1631 DESCRIPTION The HYM7V72A1600/ 72A1601/ 72A1630/ 72A1 631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin

Contextual Info: 8Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A800/ HYM7V72A801/ HYM7V72A830/ HYM7V72A831 DESCRIPTION The HYM7V72A800/ 72A801/ 72A830/ 72A831 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of nine 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit

HYM7V72A801

Abstract: HYM7V72A830
Contextual Info: 8Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A800/ HYM7V72A801/ HYM7V72A830/ HYM7V72A831 DESCRIPTION The HYM7V72A800/ 72A801/ 72A830/ 72A831 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of nine 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit

HYM7V64801

Contextual Info: 8Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 DESCRIPTION The HYM7V64800/ 64801/ 64830/ 64831 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eight 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit

Contextual Info: . IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)

IBM01161651M

Abstract: IBM0116165B1M IBM0116165M1M IBM0116165P1M
Contextual Info: IBM01161651M x 1612/8, 5.0V, EDO. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SR. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SR. IBM0116165B1M x 1612/8, 3.3V, EDO. IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization

BYTE18

Abstract: HYM7V72A1601 time-10ns tras 36ns
Contextual Info: 16Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A1600/ HYM7V72A1601/ HYM7V72A1630/ HYM7V72A1631 DESCRIPTION The HYM7V72A1600/ 72A1601/ 72A1630/ 72A1 631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin

Contextual Info: 8Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 DESCRIPTION The HYM7V64800/ 64801/ 64830/ 64831 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eight 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit

Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM01161651M x 1612/8, 5.0V, EDOMMDD61DSU-001015031. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165B1M x 1612/8, 3.3V, EDOMMDD61DSU-001015031.

IBM01181651M

Abstract: IBM0118165B1M IBM0118165M1M IBM0118165P1M ibm 9398
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM01181651M x 1610/10, 5.0V, EDOMMDD59DSU-001014332. IBM0118165P1M x 1610/10, 3.3V, EDO, LP, SRMMDD59DSU-001014332. IBM0118165M1M x 1610/10, 5.0V, EDO, LP, SRMMDD59DSU-001014332. IBM0118165B1M x 1610/10, 3.3V, EDOMMDD59DSU-001014332.

lp 1610

Abstract: IBM01181651M IBM0118165B1M IBM0118165M1M IBM0118165P1M
Contextual Info: IBM01181651M x 1610/10, 5.0V, EDO. IBM0118165P1M x 1610/10, 3.3V, EDO, LP, SR. IBM0118165M1M x 1610/10, 5.0V, EDO, LP, SR. IBM0118165B1M x 1610/10, 3.3V, EDO. IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization

Contextual Info: . IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)