TRANSISTORS SUBSTITUTE Search Results

TRANSISTORS SUBSTITUTE Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTORS SUBSTITUTE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HP346A Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors	Original		PDF
yg 2025 Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532 Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors	Original	5964-3854E yg 2025 HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532	PDF
SOT143 L03 Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236 Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power	Original	5964-3854E SOT143 L03 L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236	PDF
RFD16N05 Abstract: rfp50n06 DB223B DIODE DATABOOK RFP22N10 rfp50n06 substitute AN9321 RFP3055 RFP45N06 RFP70N06 Contextual Info: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid drivers. In this type of application the device is simply used	Original		PDF
2n3773 power Amplifier circuit diagrams Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U Contextual Info: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete	OCR Scan	AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U	PDF
AN9321 Abstract: S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055 Contextual Info: Harris Semiconductor No. AN9512 Harris Power MOSFETs September 1995 Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Authors: Stan Benczkowski and Wallace Williams Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid	Original	AN9512 1-800-4-HARRIS AN9321 S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055	PDF
AN9321 Abstract: RFP50N06 AN-7517 RFP22N10 RFP3055 RFP45N06 RFP70N06 ierc heatsink Contextual Info: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N95 bt actipect f ng werOS antors ve uce ads utho eyrds ter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid	Original		PDF
transistor 2n5088 equivalent Abstract: transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet" Contextual Info: AN106 Siliconix LowĆNoise JFETs Ċ Superior Performance to Bipolars Introduction D Junction field effect transistors continue to outperform the best bipolar transistors on lowĆfrequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET	Original	AN106 transistor 2n5088 equivalent transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"	PDF
2N5088 equivalent Abstract: siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393 Contextual Info: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET	Original	AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393	PDF
transistor fn 1016 Abstract: N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92 Contextual Info: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET	Original	AN106 transistor fn 1016 N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92	PDF
N CHANNEL jfet Low Noise Audio Amplifier Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404 Contextual Info: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET	Original	AN106 N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404	PDF
MOSFET TOSHIBA 2SK Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK Contextual Info: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.	Original		PDF
transistor 2sk Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA equivalent 2sk2837 mosfet TE161 2SK2615 2SK2698 2SK2837 Contextual Info: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.	Original		PDF
AN-7514 Abstract: fark AN-7517 RFP22N10 RFP3055 RFP45N06 RFP50N06 RFP70N06 ierc heatsink PSD1-2U Contextual Info: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N75 ubct ractil pect of ing werOS an tors ive duce ads) utho ) eyords nter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid	Original		PDF

TRANSISTOR 2sC 6090 EQUIVALENT Abstract: transistor c1364 transistor c2053 C1364 transistor TRANSISTOR C3068 pcc pw3 BC 5478 transistor nec c3157 mallory vibrator WM-64PKT Contextual Info: SECTION REFERENCE INDEX Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . . . . . . . . . 20-284 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . . . . . 285-666 Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 667-701	Original	IN9765ASZ-0 423-1020-ND 423-1019-ND 423-1027-ND MD6030NSC-0 MD6030NSZ-0 MD9752NSZ-0 423-1022-ND 423-1025-ND MD6052USZ-1 TRANSISTOR 2sC 6090 EQUIVALENT transistor c1364 transistor c2053 C1364 transistor TRANSISTOR C3068 pcc pw3 BC 5478 transistor nec c3157 mallory vibrator WM-64PKT	PDF
darlington NPN 1000V 8a transistor Abstract: TRANSISTOR b 772 p darlington NPN 1000V isotop modern transistor substitute transformer ETD 34 5kW switching regulator 500v input AN361 npn high voltage dar transistor 500v Transistor AC 51 zener diode 18b 5t Contextual Info: n * 7 ij S G S - T H O M S O N # . APPLICATION NOTE M !^ I!L I© 1 il® iß © i BIPOLAR TRANSISTORS AND DARLINGTONSDESIGN FUNCTION DRIVE AND PROTECTION by K. Rischm uller 1. INTRO DUC TIO N The field of applications open to bipolar transistors and Darlingtons is wide. They are used as circuit	OCR Scan	10OkW 100kHz 380/440V AN358 L4979 AN364 AN366. darlington NPN 1000V 8a transistor TRANSISTOR b 772 p darlington NPN 1000V isotop modern transistor substitute transformer ETD 34 5kW switching regulator 500v input AN361 npn high voltage dar transistor 500v Transistor AC 51 zener diode 18b 5t	PDF
D40CI Abstract: TQ-202 D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734 Contextual Info: VERY HIGH GAIN D40C Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS .5 AMP, 6.25 WATTS Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-arnplifier, and capacitor multiplier applications. NPN COLLECTOR	OCR Scan	TQ-202 TQ-202 D40CI D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734	PDF
D41K1 Abstract: D41K3 D40K D41K D41K2 Contextual Info: VERY HIGH GAIN D41K Series PNP POWER DARLINGTON TRANSISTORS -30 - -50 VOLTS -2 AMP, 10 WATTS COMPLEMENTARY TO THE D40K SERIES Applications: • • • • • • • • • Driver Regulator Touch Switch I.C. Driver Capacitor Multiplier Audio Output Relay Substitute	OCR Scan	O-202 O-202 D41K1 D41K2 -20mA, 300ms D41K3 D40K D41K	PDF
"CHAPTER 1 Introduction to Power Semiconductors" Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor Contextual Info: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General	Original		PDF
D44E1 Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133 Contextual Info: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS	OCR Scan	04Sai4\| D44E1 D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133	PDF
CQ 4.000 crystal oscillator 4Mhz Abstract: ztb 421 CQ 13.560 ctx128 ats 4.096 18pf CTX128 diode SE271 ZTB455E CSX750PCC 7213 time base generator ic Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 16-201 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 202-402 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 403-423	Original		PDF
ctx128 Abstract: IC 8021-2 CTX128 diode SE271 CSA 20.00MX ZTT-4.00MG ZTB455E CSX750PCC ECS-327SMO ECS-10-13-1H Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 14-176 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 177-313 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 314-333	Original		PDF
D40C4 Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS Contextual Info: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and	OCR Scan	T-33-29 T0-20Î D40C4 D40C7 NPN POWER DARLINGTON TRANSISTORS	PDF
POWER BJTs Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time Contextual Info: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor	Original	AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time	PDF

TRANSISTORS SUBSTITUTE Search Results

TRANSISTORS SUBSTITUTE Result Highlights (5)

TRANSISTORS SUBSTITUTE Datasheets Context Search

HP346A

yg 2025

SOT143 L03

RFD16N05

2n3773 power Amplifier circuit diagrams

AN9321

AN9321

transistor 2n5088 equivalent

2N5088 equivalent

transistor fn 1016

N CHANNEL jfet Low Noise Audio Amplifier

MOSFET TOSHIBA 2SK

transistor 2sk

AN-7514

TRANSISTOR 2sC 6090 EQUIVALENT

darlington NPN 1000V 8a transistor

D40CI

D41K1

"CHAPTER 1 Introduction to Power Semiconductors"

D44E1

CQ 4.000 crystal oscillator 4Mhz

ctx128

D40C4

POWER BJTs