TRANSISTORS MBI Search Results

30c53

Abstract: 2SA1784 2SC4644 ITR04653
Contextual Info: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .

ITR04653

Abstract: 2SA1784 2SC4644
Contextual Info: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .

2SA1784

Abstract: 2SC4644 ITR04653
Contextual Info: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .

smd marking BG

Abstract: 2SB1124 br 39 SMD Bg marking
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1124 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Absolute Maximum Ratings Ta = 25 Parameter

smd marking BJ

Abstract: 2SB1302 BJ SMD IC
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity,

2SB1121

Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1121 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,

2SB1205

Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.

NPN POWER TRANSISTOR 2SD1878

Abstract: transistor 2sD1880 D1879 sd1878
Contextual Info: SAXYO TRANSISTO RS FOR CRT DISPLAY VIDEO O U TPUT A P PLICATIONS Transistors for High~Definition Monitor TV Applications Transistors for Video Output Applications The use of new technology, FBET Fold-Back Electrode Transistor and MBIT (Multi-Base Island Transistor), that are

Diode 1525

Abstract: 2SC4769 to220ml
Contextual Info: s tu m Transistors for Very H igh~Definition CRT Display Horizontal Deflection Output Use 1 Transistors for CRT horizontal deflection output use must be of high-breakdown voltage, high-current, high-speed switching type to provide higher frequency. We have the following lineup of transistors for various uses.

wt smd

Abstract: vebo Transistors marking WT SMD MARKING 2SC4694 WT SMD MARKING
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

2SC5310

Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC5310 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Large current capacitance. 0.55 Adoption of FBET, MBIT processes. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-to-emitter saturation voltage.

Contextual Info: SAMtYO TRANSISTORS FOR CRT DISPLAY VIDEO OUTPUT APPLICATIONS Transistors for High-Definition Monitor TV Applications Transistors for V i d e o O u t p u t A p p l i c a t i o n s Th e use of n e w te ch nology, e n t i r e l y or ig in al This makes FB ET

SL2364

Abstract: SL2364C 6 "transistor arrays" ic transistor package- max ratings of T05 Monolithic Transistor Pair CM10 SL2363C dilmon
Contextual Info: SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail transistors, They are monolithic integrated circuits manufactured on a very high speed bipolar process which

SL2363C

Abstract: dilmon CM10 SL2364 SL2364C 6 "transistor arrays" ic transistor package- max ratings of T05
Contextual Info: SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail transistors. They are monolithic integrated circuits manufactured on a very high speed bipolar process which

SL2364

Abstract: Monolithic Transistor Pair
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a

Monolithic Transistor Pair

Abstract: dilmon mp14 SL2364 SL2364C Dual Long-Tailed Pair Transistor Array 6 "transistor arrays" ic
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a

SL2364C

Abstract: Dual Long-Tailed Pair Transistor Array Monolithic Transistor Pair SL2364 MP14
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS 3305 -2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

dilmon

Contextual Info: GEC P L E S S E Y S i S I M I < <> \ I < l 1 l> H ADVANCE INFORMATION S DS 3305-2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a

2SB1123

Abstract: 2sd1623
Contextual Info: Ordering number: EN 1727B 2SB1123/2SD1623 N0.1727B PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBET, MBIT processes.

Contextual Info: Ordering number:EN 1030E _ 2SB926/2SD1246 PNP/ NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes

2SC6043

Contextual Info: 2SC6043 Ordering number : ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.

Contextual Info: 2SC6043 Ordering number : ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.