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    TRANSISTORS IRF 830R Search Results

    TRANSISTORS IRF 830R Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTORS IRF 830R Datasheets Context Search

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    LP1800

    Abstract: Transistors IRF 830R IRF830R ltsj
    Contextual Info: m H A R R I S IR F 8 3 0 /8 3 1 /8 3 2 /8 3 3 IR F 8 3 0 R /8 3 1 R /8 3 2 R /8 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features • T 0 -2 2 0 A B 4.0 A and 4.SA, 4S 0V - 5 0 0V T O P VIEW • ro s o n = 1 .5 il and 2 .0 f i


    OCR Scan     		IRF830, IRF831, IRF832, IRF833 IRF830R, IRF831R, IRF832R IRF833R LP1800 Transistors IRF 830R IRF830R ltsj PDF