TRANSISTOR ZY Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

NPN TRANSISTOR Z4

Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595
Contextual Info: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

2SC738

Abstract: 2SC7 FT440
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor

BUK545

Abstract: BUK545-60A BUK545-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in automotive and general purpose

2SB1628

Abstract: marking ZY transistor NEC 560
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension PACKAGE DRAWING UNIT: mm and is ideal for DC/DC converters and mortor drivers.

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

TRANSISTOR BC 252

Abstract: BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954
Contextual Info: 7^5gS37 P05A771 G • ^ T ' 3 3 - 3 SGS-THOMSON B U V 56 s lü iO T K s K S S G S-THOMSON 3GE D FAST SWITCHING POWER TRANSISTOR ■ SUITABLE FOR SWITCH MODE POWER SUP­ PLY, UPS, DC AND AC MOTOR CONTROL DESC RIPTIO N High voltage, high speed transistor suited for use on

induktiv

Abstract: "PNP Transistor" npn transistors,pnp transistors SS TRANSISTOR pnptransistor pnp transistor s 0601 NPOS EI0801NPCS npntransistor
Contextual Info: Näherungsschalter Induktiv Rostfreies Stahlgehäuse Typen EI, Ø 6,5, M 8 • Rostfreies Stahlgehäuse, zylindrisch • Durchmesser: Ø 6,5, M 8, • Schaltabstand: 1 bis 2 mm • Betriebsspannung: 10 bis 40 VDC • Ausgang: NPN/PNP-Transistor, Schliesser und Öffner

New Jersey Semiconductor

Contextual Info: <zy\£.uj J. , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1941 Silicon PNP Power Transistor I I \ •-< DESCRIPTION • Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @lc=- 7A

transistor pnp 3015

Abstract: transistor 1202 1204 transistor 1202 transistor ei 48 f npn 3010 NPOS EI 33 npn transistors,pnp transistors PPOSS1
Contextual Info: Näherungsschalter Induktiv Rostfreies Stahlgehäuse Typen EI, M 12, M 18, M 30 • Rostfreies Stahlgehäuse, zylindrisch • Durchmesser: M 12, M 18, M 30 • Kurzbauform oder Langbauform • Schaltabstand: 2 - 15 mm • Betriebsspannung: 10 - 40 VDC • Ausgang: NPN/PNP-Transistor, Schliesser und Öffner

zy- transistor

Abstract: qm50tb2hb
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB Collector current. 50A Collector-emitter voltage.1000V • hFE DC current gam. 750 • Insulated Type • UL Recognized

transistor smd zy

Abstract: smd transistor zy zy smd transistor transistor SMD marking ZY smd marking zx zy- transistor transistor smd zx smd transistor 560 2SB1628 smd transistor 660
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1628 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO -20 V Collector to Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTA2015 TRANSISTOR PNP FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTC4076 APPLICATIONS  General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

transistor ZY

Abstract: ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=100mW z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. KTA2015W Pb Lead-free APPLICATIONS z General purpose application and switching application.

KTD1898

Contextual Info: KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package General Purpose Application 4 1 CLASSIFICATION OF hFE 1 A Product-Rank

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTD1898 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

AN569

Abstract: 632 transistor motorola MTG15P10 AN569 in Motorola Power Applications
Contextual Info: Order this data sheet by MTG15P10/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Des/gnerfs Data Sheet MTG15PI0 Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, regulahigh speed power switching applications such as switching

Contextual Info: 2SA1225 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 3 Ç A1 11 *5 Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. 6 8 MAX. C. 6 MAX. * • High Transition Frequency : fr= 100MHz (Typ.) Complementary to 2SC2983

KTA2015

Contextual Info: KTA2015 SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Diode GP 638

Contextual Info: SIEMENS BUZ 61 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 61 400 V h 12.5 A flbsion 0.4 n Package Ordering Code TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Values Unit A Continuous drain current

Contextual Info: SIEMENS BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 20 Vbs 100 V *> ^DS on Package Ordering Code 13.5 A 0 .2 Q TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current Id 7b = 28 °C