TRANSISTOR ZR Search Results

TRANSISTOR ZR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

TRANSISTOR ZR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	buk581-100a ot223 buk581 -100a	PDF
smd transistor marking n3 Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55 Contextual Info: DISCRETE SEMICONDUCTORS 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J	OCR Scan	2pc4617j sc-89 ot490 sca63 +85002/00/02/pp8 smd transistor marking n3 marking smd pnp transistor zr transistor smd zr marking smd pnp transistor ec n3 smd transistor transistor smd marking le transistor smd zr 55	PDF
transistor smd ZR Abstract: SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr 2PC4617JR TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE SP 2108 npn transistor 2PC4617J 2PC4617JS Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING	Original	m3d425 2pc4617j sca63 115002/00/02/pp8 +9transistor smd zr smd marking code transistor 501 marking smd pnp transistor zr smd transistor marking zr 2pc4617jr transistor smd marking code al transistor smd marking code sp 2108 npn transistor 2pc4617js	PDF
bf 194 pin configuration Abstract: BA12004B BA12001 BA12001B BA12003B BA12003BF Seven Transistor Array PNP cmos open collector array 7ch pnp DARLINGTON TRANSISTOR ARRAY Contextual Info: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor	Original	ba12001b ba12003b ba12003bf ba12004b +5bf 194 pin configuration ba12001 seven transistor array pnp cmos open collector array 7ch pnp darlington transistor array	PDF
2P transistor Abstract: l43 transistor Contextual Info: DISCRETE SEMICONDUCTORS a ffi SHEET 2PC4617J NPN general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING	OCR Scan	2pc4617j sc-89 sca60 115104/00/01/pp8 +22p transistor l43 transistor	PDF
2PD601A Abstract: 2PB709A 2PD601AQ 2PD601AR 2PD601AS BP317 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES PINNING	Original	m3d114 2pd601a sc-59 2pb709a +62pd601aq 2pd601as mam321 2pd601ar sca63 bp317	PDF
2SC738 Abstract: 2SC7 FT440 Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor	OCR Scan	2sc738 100mhz 440mhztyp sc-43 +22sc7 ft440	PDF
23 sot346 Abstract: SC59 philips transistor number code book FREE 2PD601A Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor Product specification Supersedes data of 1999 Apr 23 2001 Nov 19 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES PINNING	Original	m3d114 2pd601a sc-59 ot346 +82pb709a 2pd601aq 2pd60mail sca73 613514/05/pp8 23 sot346 sc59 philips transistor number code book free	PDF
BUK455-100A Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	buk455-100a/b buk455 -100a -100b +2t0220ab buk455-100a	PDF
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended fcr use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	buk455-600b t0220ab	PDF
YBs transistor Abstract: transistor AC 307 Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	buk453-500b t0220ab ybs transistor transistor ac 307	PDF
700 v power transistor Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device	OCR Scan	buk7635-55 sqt404 700 v power transistor	PDF
Zr 1100 Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	buk444-2o0a/b buk444 -200a -200b +2pinning-sot186 zr 1100	PDF
TRANSISTOR C 460 Abstract: 2SB709A 2SC2404 XN4683 Contextual Info: Composite Transistors XN4683 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol	Original	xn4683 transistor c 460 2sb709a 2sc2404	PDF

2SB0709A Abstract: 2SB709A 2SC2404 XN04683 XN4683 Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C)	Original	xn04683 xn4683 2sb0709a 2sb709a +12sc2404	PDF
2108 npn transistor Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 2PC4617 NPN general purpose transistor Product specification Supersedes data of 1998 Jul 21 1999 May 21 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617 FEATURES PINNING • Low current max. 100 mA	Original	m3d173 2pc4617 sc-75 2pa1774 +3mam348 115002/00/03/pp8 2108 npn transistor	PDF
transistor smd ZR Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23	Original	m3d425 2pc4617j sca73 613514/03/pp8 +10transistor smd zr marking smd pnp transistor zr transistor smd zr npn transistor smd marking code ua transistor smd bp smd transistor marking zr smd code marking sot23 philips transistor smd code transistor smd marking code transistor zr 08	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon General Purpose Amplifier Transistor MSD1819A-RT1 Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package	OCR Scan	msd1819a-rt1 sc-70/sot-323 7-inch/3000	PDF
transistor power 5w Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170 Contextual Info: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original	ph2323-5 transistor power 5w transistor 5503 transistor 1271 +7silicon npn power transistor c 869 d 595 transistor transistor j17 2052-5636-02 transistor c 1344 transistor common base configuration j170	PDF
2SB1301 Contextual Info: SILICON TRANSISTOR 2S B 1 30 1 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLO DESCRIPTION 2S813Û1 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package	OCR Scan	2s813 2sd1952 2sb1301	PDF
2SB1301 Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134 Contextual Info: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS	OCR Scan	2sb1301 2sd1952 marking z.r marking zr +3iei-1213 mei-1202 mf-1134	PDF
transistor 1gs Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,	OCR Scan	buk453-60a/b buk473-60a/b buk473 pinning-sot186a +41e-03 ie-05 1e-06 transistor 1gs	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,	OCR Scan	buk453-100a/b buk473-100a/b buk473 -100a +2-100b pinning-sot186a	PDF
cd 1191 cb Abstract: CD 1691 CB Contextual Info: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per	OCR Scan	bfp67/bfp67r/bfp67w bfp67 bfp67r bfp67w +320-jan-99 cd 1191 cb cd 1691 cb	PDF

TRANSISTOR ZR Search Results

TRANSISTOR ZR Result Highlights (5)

TRANSISTOR ZR Datasheets Context Search

smd transistor marking n3

transistor smd ZR

bf 194 pin configuration

2P transistor

2PD601A

2SC738

23 sot346

BUK455-100A

YBs transistor

700 v power transistor

Zr 1100

TRANSISTOR C 460

2SB0709A

2108 npn transistor

transistor smd ZR

transistor power 5w

2SB1301

2SB1301

transistor 1gs

cd 1191 cb