TRANSISTOR ZO 109 Search Results

TRANSISTOR ZO 109 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
93425ADM/B	Rochester Electronics LLC	93425 - 1K X 1 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

TRANSISTOR ZO 109 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
yb 0d Contextual Info: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation	OCR Scan	1090-400S yb 0d	PDF
6943-3 Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications	Original	OT343 CFH800 Rn/50 6943-3	PDF
transistor Zo 105 Abstract: 6943-3 55086 HEMT marking P 05973 Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973	PDF
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor Contextual Info: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C	Original	B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor	PDF
transistor zo 607 Abstract: ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS	Original	2SC4570 transistor zo 607 ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN	PDF
data sheet 702 TRANSISTOR npn Abstract: 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571 Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.0 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.9pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS	Original	2SC4571 data sheet 702 TRANSISTOR npn 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571	PDF
2663 transistor Abstract: IC 7667 transistor 9651 data sheet 702 TRANSISTOR npn 4687 transistor transistor RF S-parameters 2746 transistor ic 744 npn transistor dc 558 pc 817 Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION •Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER	Original	2SC4260 2663 transistor IC 7667 transistor 9651 data sheet 702 TRANSISTOR npn 4687 transistor transistor RF S-parameters 2746 transistor ic 744 npn transistor dc 558 pc 817	PDF
transistor 3506 nec Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter	PDF
ZO 607 transistor Abstract: transistor zo 607 zo 607 ZO 607 MA transistor on 4408 zo 607 MA transistor TC2483 transistor ZO 607 MA 2SC5186 2SC5186-T1 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	2SC5186 ZO 607 transistor transistor zo 607 zo 607 ZO 607 MA transistor on 4408 zo 607 MA transistor TC2483 transistor ZO 607 MA 2SC5186 2SC5186-T1	PDF
transistor zo 107 Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor	PDF
transistor zo 107 Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor	PDF
transistor on 4409 Abstract: transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA 2SC5180 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain PACKAGE DIMENSIONS Units : mm S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz	Original	2SC5180 2SC5180 transistor on 4409 transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA	PDF
ic CD 4047 Abstract: NEC D 809 F transistor NEC D 586 2SC5185 2SC5185-T1 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1 .3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.	OCR Scan	2SC5185 2SC5185-T1 2SC5185-T2 ic CD 4047 NEC D 809 F transistor NEC D 586 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662	PDF
MAR 618 transistor Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz	Original	RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET	PDF

NEC 2933 Abstract: 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5183R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	2SC5183R NEC 2933 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722	PDF
motorola 352 transistor Abstract: motorola rf Power Transistor Motorola Microwave Transistor motorola 226 376C MRF10070 MRF10350 MRF10500 MOTOROLA POWER TRANSISTOR 14 transistor PD j6 Contextual Info: MOTOROLA Order this document by MRF10070/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10070 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz	Original	MRF10070/D MRF10070 MRF10070/D* motorola 352 transistor motorola rf Power Transistor Motorola Microwave Transistor motorola 226 376C MRF10070 MRF10350 MRF10500 MOTOROLA POWER TRANSISTOR 14 transistor PD j6	PDF
2SC5183 Abstract: 2SC5183-T1 2SC5183-T2 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.8 +0.2 –0.3 1.5 +0.2 –0.1 Embossed tape, 8 mm wide,	Original	2SC5183 2SC5183-T2 2SC5183-T1 SC-61 2SC5183 2SC5183-T1 2SC5183-T2	PDF
MAX3681EAG Abstract: MAX3664 MAX3675 MAX3681 Contextual Info: 2nd ecn PR .1 Tboblet 19-1091; Rev 1; 5/04 05/24/04 KIT ATION EVALU E L B AVAILA +3.3V, 622Mbps, SDH/SONET 1:4 Deserializer with LVDS Outputs _Features The MAX3681 deserializer is ideal for converting 622Mbps serial data to 4-bit-wide, 155Mbps parallel	Original	622Mbps, MAX3681 622Mbps 155Mbps MO150. MAX3681EAG MAX3664 MAX3675	PDF
nec 13772 Abstract: 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	2SC5182 2SC5182-T1 SC-59 nec 13772 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715	PDF
transistor NEC D 587 Abstract: ic nec 2701 marking 84T MARKING 452 4PIN NEC 2134 transistor 2SC5178 2SC5178R 2SC5178R-T1 2SC5178R-T2 84t MARKING Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5178R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm +0.2 2.9±0.2 (1.8) 0.95 0.85 evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)	Original	2SC5178R transistor NEC D 587 ic nec 2701 marking 84T MARKING 452 4PIN NEC 2134 transistor 2SC5178 2SC5178R 2SC5178R-T1 2SC5178R-T2 84t MARKING	PDF
mode 5 IFF Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz Contextual Info: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV1011-300 429-HVVi EG-01-DS02A EG-01-DS02A5 mode 5 IFF diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz	PDF
Nordmende Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model Contextual Info: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original		PDF
AT41500 Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586	PDF
transistor zo 607 Abstract: 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	2SC5184 2SC5184-T2 transistor zo 607 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386	PDF

TRANSISTOR ZO 109 Search Results

TRANSISTOR ZO 109 Result Highlights (5)

TRANSISTOR ZO 109 Datasheets Context Search

yb 0d

6943-3

transistor Zo 105

TRANSISTOR zo 109 ma

transistor zo 607

data sheet 702 TRANSISTOR npn

2663 transistor

transistor 3506 nec

ZO 607 transistor

transistor zo 107

transistor zo 107

transistor on 4409

ic CD 4047

MAR 618 transistor

NEC 2933

motorola 352 transistor

2SC5183

MAX3681EAG

nec 13772

transistor NEC D 587

mode 5 IFF

Nordmende

AT41500

transistor zo 607