TRANSISTOR XM Search Results

transistor XM

Abstract: transistor power transistor k 30 transistor TRANSISTOR P 3 transistor mesfet transistor l 2 xmfp1-m3
Contextual Info: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor r •■ i m cd (3l (2 ) '~'B - (4) m -m l XMFS2-M1 Pm M arking (1) So urce 12V. G a te (3): Source (4) : Dram A : Part No. B . Lo i No. in mm Gain (dB) Minimum Noise Figure

Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

Contextual Info: m 2N5943 \ \ NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 S V M DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. DIMENSIONS ! MIN. MAX. MIN. MAX. 4>a 0.190 0.210 4.83 533 6.60 INCHES MILLIMETERS

RN1710JE

Abstract: RN1711JE RN2710JE RN2711JE
Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)

Contextual Info: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)

1671B

Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
Contextual Info: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point

Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

RN1110FT

Abstract: RN1111FT RN2110FT RN2111FT
Contextual Info: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)

2N5943

Contextual Info: 2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 s Y M s DESCRIPTION: ? The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. DIMENSIONS INCHES MIN. MAX. MILLIMETERS MIN. MAX. <pa 0 190 0.210 4 83 5 33 A 0 240

MEL82

Abstract: MI38T
Contextual Info: NPN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 M EL82 is NPN silicon p lanar ph o to ­ transistor. It is encapsulated in a 3m m diam eter, low profile and r 4*1 • (0.16) flangeless water clear transparent epoxy package. It features sensitivity,

Contextual Info: Philips Semiconductors Product Specification BUK542-1OOA/B PowerMOS transistor J - o g ic J te v e lF E T ^ ^ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

MEL78

Abstract: MIB31T
Contextual Info: IVI I KU NPN SILICON PHOTO TRANSISTOR DESCRIPTION M EL78 is NPN silicon planar photo­ transistor. It features illumination sensitivity, ultra fast high 03.15 0.124 response time. All dimension in mm(inch) No Scale Toi. : +/-0.3mm 5.3 M EL78 is spectrally and mechanically

2SD1614

Abstract: IEI-1213 MEI-1202 MF-1134 TC-5811A C5811 PJ 1209
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2 S D 1 6 1 4 is designed fo r audio frequency power am plifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • W orld Standard M iniature Package

SD1006

Contextual Info: SD1006 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI SD1006 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCEO 30 V VCBO 50 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5943

Contextual Info: 2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 1.0 W @ TA = 25 C O 3.5 W @ TC = 25 C O O O O O TJ

Contextual Info: /T T SGS-THOMSON *7M, HD i[L[l gìrMD(g@ TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI­ TATION

nec 0882

Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

Contextual Info: DATA SHEET NEC / / 2 SD1614 SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2 S D 1 6 1 4 1$ designed fo r a ud io fre qu e ncy pow er a m p lifie r and sw itch ing a p p lica tio n , especiafiy in H y b rid Integrated C ircu its.

J6 transistor

Abstract: 2SD1513 PA33 2sb1068 2sb10681
Contextual Info: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o

D 1413 transistor

Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Contextual Info: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249

transistor ITT 2907

Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
Contextual Info: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz