TRANSISTOR XM Search Results

Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

Contextual Info: m 2N5943 \ \ NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 S V M DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. DIMENSIONS ! MIN. MAX. MIN. MAX. 4>a 0.190 0.210 4.83 533 6.60 INCHES MILLIMETERS

RN1710JE

Abstract: RN1711JE RN2710JE RN2711JE
Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)

nec 0882

Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

2SJ625

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 0.4 +0.1 –0.05 +0.1 0.65–0.15 3 0 to 0.1 1 • 1.8 V drive available • Low on-state resistance RDS(on)1 = 113 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)

DTA143

Abstract: transistor XM MARKING A12 SOT-23
Contextual Info: DTA143 XM/XE/XUA/XCA/XSA PNP Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

transistor XM

Abstract: diode marking code xm transistor marking code 43 TO92S package
Contextual Info: DTC143 XM/XE/XUA/XCA/XSA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

Contextual Info: MHW7292AN Rev. 4, 3/2006 Freescale Semiconductor Technical Data Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications

Contextual Info: Document Number MHW7222BN Rev. 6, 5/2006 Freescale Semiconductor Technical Data Features • Specified for 77 - and 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions

Contextual Info: Document Number: MHW9146N Rev. 4, 5/2006 Freescale Semiconductor Technical Data MHW9146N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology

gummel poon model parameter HBT

Abstract: 726-BFP640FESDH6327 Germanium Transistor
Contextual Info: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC2815D/L EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. M ILLIM ETERS FEATURES • Low Collector Saturation Voltage : VCE sat =0.5V(Max. ) (IC=1A) • High Speed Switching Time : tstg=1.0/jS(Typ.)

Contextual Info: Document Number: MMG2001NT1 Rev. 6, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology

Contextual Info: TOSHIBA RN1710,RN1711 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1710, RN1711 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (Ultra Super Mini Type with 5 leads) With Built-in Bias Resistors

transistor NEC D 582

Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: firn The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom

VPT09051

Abstract: transistor ag qs VPT09050
Contextual Info: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A

Contextual Info: T O S H IB A RN1610,RN1611 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1610, RN1611 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND Unit in mm DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads) With Built-in Bias Resistors

CGD942C

Contextual Info: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

CGD944C

Contextual Info: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

ic-vn

Contextual Info: Temic BFP67/BFP67R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. jk Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain

CGD1042H

Abstract: BV 1 150
Contextual Info: CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 3 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

60N03

Abstract: 60N035
Contextual Info: KF17117A-5 6 0 N 0 3 5 N -Channel Field Effect Transistor Preliminary June 2001 General Description These n-channel power field effect transistors are produced using high cell density D M O S technology. These devices are particularly suited for low voltage applications such as automotive and other battery

PN channel MOSFET 10A

Abstract: 1S71 1S74 C035 STD20N06 TJ50D NMOS depletion pspice model diode 935 lg
Contextual Info: S G S -T H O M S O N HUSCTIiMOÛS STD20N06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V dss RDS on Id STD20N06 60 V < 0.03 n 20 A (*) . . • . . . . ■ TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: CGD985LC 1 GHz, 25 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.