TRANSISTOR WP 128 Search Results

ISL45041IRZ-T

Abstract: TB347 AN1207 ISL45041 ISL45041EVAL1Z ISL45041IRZ 2wire
Contextual Info: ISL45041 Data Sheet August 29, 2006 TFT-LCD I2C Programmable VCOM Calibrator Features • 128-Step Adjustable Sink Current Output The VCOM voltage of an LCD panel needs to be adjusted to remove flicker. This part provides a digital interface to control

transistor wp 128

Abstract: 041Z intersil standard part marking AN1275 ISL45041 ISL45041EVAL1Z ISL45041IRZ TB347 TB363 JESD22-A114E
Contextual Info: ISL45041 Data Sheet December 17, 2010 TFT-LCD I2C Programmable VCOM Calibrator Features • 128-Step Adjustable Sink Current Output The VCOM voltage of an LCD panel needs to be adjusted to remove flicker. This part provides a digital interface to control

Contextual Info: ISL45041 Data Sheet December 17, 2010 TFT-LCD I2C Programmable VCOM Calibrator Features • 128-Step Adjustable Sink Current Output The VCOM voltage of an LCD panel needs to be adjusted to remove flicker. This part provides a digital interface to control

flash hamming ecc

Abstract: 29F0408RP radiation solid state recorder
Contextual Info: SPACE ELECTRONICS INC. FLASH MEMORY S PACE PRODUCTS 29F0408RP DESCRIPTION: • Single 5.0V supply • Organization: - Memory cell array: 4M + 128k bit x 8bit - Data register: (512 + 16)bit x 8bit • Automatic program and erase - Page program: (512 + 16)Byte

TC5816AFT

Abstract: tc5816ft TC5816 toshiba NAND ID code TSOP44-P-400B nv16 NAND memory nand toshiba reference
Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816AFT PRELIMINARY 16Mbit 2M x 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a 264 byte static register which allows

24C04B

Abstract: 24C02B S-24C04B S-24C01B S-24C01BFJ S-24C01BMFN S-24C02B S-24C02BFJ S-24C02BMFN S-24C04BFJ
Contextual Info: Rev. 2.2 S-24C01B/02B/04B CMOS 2-WIRE SERIAL EEPROM The S-24C01B/02B/04B are series of 2-wire, low power 1K/2K/4K-bit EEPROMs with a wide operating range. They are organized as 128wordx8-bit, 256-word×8-bit, and 512-word×8-bit, respectively. Each is capable of page write, and sequential read.

S-24C04B1

Abstract: 24C04B 2952 8pin 72RA 24C02bdp-1a
Contextual Info: Rev. 2.1 S-24C01B/02B/04B CMOS 2-WIRED SERIAL EEPROM The S-24C01B/02B/04B are series of 2-wired, low power 1K/2K/4K-bit EEPROMs with a wide operating range. They are organized as 128wordx ×8-bit, 256-word× ×8-bit, and 512-word× ×8-bit, respectively. Each is

IC 24C04A equivalent ic

Abstract: S-24C0XA S24C04A
Contextual Info: Rev. 2.1 S-24C01A/02A/04A Series CMOS 2-WIRED SERIAL EEPROM The S-24C0XA is a series of 2-wired, low power 1K/2K/4K-bit EEPROMs with a wide operating range. They are organized as 128word x 8-bit, 256-word × 8-bit, and 512-word × 8-bit, respectively. Each

Contextual Info: Rev. 2.2_20 S-24C01B/02B/04B CMOS 2-WIRE SERIAL EEPROM The S-24C01B/02B/04B are series of 2-wire, low power 1K/2K/4K-bit EEPROMs with a wide operating range. They are organized as 128x8-bit, 256-word× ×8-bit, and 512-word× ×8-bit, respectively. Each is

24C04B

Abstract: 24c02b 24C01* serial eeprom S-24C04B
Contextual Info: Rev. 2.0 S-24C01B/02B/04B CMOS 2-WIRED SERIAL EEPROM The S-24C01B/02B/04B are series of 2-wired, low power 1K/2K/4K-bit EEPROMs with a wide operating range. They are organized as 128wordx8-bit, 256-word×8-bit, and 512-word×8-bit, respectively. Each is capable of page write, and sequential read.

10-15V

Abstract: X55060
Contextual Info: X55060 64K Data Sheet PRELIMINARY March 28, 2005 Dual Voltage Monitor with Integrated System Battery Switch and EEPROM FN8133.0 —In circuit programmable ROM mode • Minimize EEPROM programming time —64 byte page write mode —Self-timed write cycle

EEPROM 256 bytes 24c

Abstract: IC 24C04A equivalent ic S-24C01A S-24C02A S-24C04A S-24C0XA
Contextual Info: Rev. 2.2 S-24C01A/02A/04A CMOS 2-WIRE SERIAL EEPROM The S-24C0XA is a series of 2-wired, low power 1K/2K/4K-bit EEPROMs with a wide operating range. They are organized as 128-word x 8-bit, 256-word × 8-bit, and 512-word × 8-bit, respectively. Each is capable of

Contextual Info: Ordering number : ENA1706B CMOS IC LE24LB1283 Two Wire Serial Interface EEPROM 128k EEPROM Overview The LE24LB1283 is a 2-wire serial interface EEPROM. It realizes high speed and a high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. This device is compatible with I2C memory

intel 28F256 flash

Abstract: 80C196NP 2172 P-Channel MOSFET 12V SOT 23 si9405dy 28F001BX 28F010 28F016 28F020 28F256
Contextual Info: E AP-617 APPLICATION NOTE Additional Flash Data Protection Using VPP, RP#, and WP# MICHAEL CASTILLO MCD MARKETING APPLICATIONS November 1995 Order Number: 292172-001 1/30/96 10:43 AM 292172_1.DOC Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including

a1706

Abstract: USP6947325 D4D3
Contextual Info: Ordering number : ENA1706 CMOS IC LE24LB1283 Two Wire Serial Interface EEPROM 128k EEPROM Overview The LE24LB1283 is a 2-wire serial interface EEPROM. It realizes high speed and a high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. This device is compatible with I2C memory

S-24C01A

Abstract: S-24C02A S-24C04A S-24C0XA 24C01A IC 24C04A equivalent ic
Contextual Info: Rev. 2.2_30 S-24C01A/02A/04A CMOS 2-WIRE SERIAL EEPROM The S-24C0XA is a series of 2-wired, low power 1K/2K/4K-bit EEPROMs with a wide operating range. They are organized as 128-word x 8-bit, 256-word × 8-bit, and 512-word × 8-bit, respectively. Each is capable of

24C01 msop

Abstract: 24C02B S-24C01/02B 24C01 pin configuration S-24C01B S-24C02B S-24C04B
Contextual Info: Rev.3.1_00 S-24C01B/02B/04B 2-WIRE CMOS SERIAL E2PROM The S-24C01B/02B/04B is a 2-wired, low power and 2 wide range operation 1k bit, 2k bit, 4k bit E PROM organized as 128 words x 8 bits, 256 words × 8 bits, and 512 words × 8 bits in each. Page write and sequential read are available.

SAMSUNG MCP

Abstract: MCP Electronics 128M NAND Flash Memory MCP NAND MCP MEMORY 4MX16* sram UtRAM Density NAND FLASH SAMSUNG M/BVS mcp ohm
Contextual Info: Preliminary MCP MEMORY KBC00A6A0M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.

EIGHT p-channel MOSFET ARRAY

Abstract: mosfet price AP-617 28f800b5 28F320 2172 28F001BX 28F008S3 28F010 28F016
Contextual Info: E AP-617 APPLICATION NOTE Additional Flash Data Protection Using VPP, RP#, and WP# December 1998 Order Number: 292172-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

S-24G02B

Abstract: 24G02 24C0x 24C02B S-24C01
Contextual Info: Rev. 2.0 S-24C01B/02B/04B CMOS 2-WIRED SERIAL EEPROM The S-24C01B/02B/04B are series of 2-wired, low power 1 K/2K/4K-bit EEPROMs with a wide operating range. They are organized as 128wordx8-bit, 256-wordx8-bit, and 512-wordx8-bit, respectively. Each is capable of page write, and sequential read.

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816ADC PRELIMINARY 16Mbit 2M X 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as

10-15V

Abstract: X55060 X55060V20 X55060V20I
Contextual Info: Preliminary Information 64K X55060 Dual Voltage Monitor with Integrated System Battery Switch and EEPROM FEATURES DESCRIPTION • • • • • This device combines power-on reset control, battery switch circuit, watchdog timer, supply voltage supervision, secondary voltage supervision, and 64Kbit serial

Contextual Info: Preliminary Information 64K X55060 Dual Voltage Monitor with Integrated System Battery Switch and EEPROM FEATURES DESCRIPTION • • • • • This device combines power-on reset control, battery switch circuit, watchdog timer, supply voltage supervision, secondary voltage supervision, and 64Kb serial

KC06

Abstract: TC58V16BFT
Contextual Info: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X