TRANSISTOR WC Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency

Contextual Info: NXP 1.4 to 1.7 GHz RF power transistor BLF7G15LS-200 RF power transistor for leading performance in 1.5 GHz LTE basestations Optimized for 1.5 GHz LTE/W-CDMA applications and built in rugged Gen7 LDMOS, this 28 V ceramic transistor delivers best-in-class efficiency in a symmetrical Doherty configuration.

sot467b

Contextual Info: BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 2 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband

sot467bpo

Contextual Info: BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 1 — 10 February 2012 Objective data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from HF to 1 GHz. The excellent ruggedness and broadband performance

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

2sa 940

Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Contextual Info: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES

Capacitor Tantal SMD

Abstract: BLF2022-30 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-30 UHF power LDMOS transistor Preliminary specification 2001 Aug 07 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-30 PINNING FEATURES • High power gain PIN DESCRIPTION

BLF2022-70

Abstract: BLF2047 ACPR10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Preliminary specification 2000 Sep 21 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-70 PINNING FEATURES • High power gain

BUX12

Abstract: sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf
Contextual Info: *B UX12 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device Dispositif recommandé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,

CBVK741B019

Abstract: F63TNR F852 FDT439N PN2222A 63a30
Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

F852 transistor

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

SOT539A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 2001 Jan 04 2003 Mar 07 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 May 17 2002 Jul 04 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 PINNING - SOT502A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Preliminary Specification 2001 Dec 04 Philips Semiconductors Preliminary Specification UHF power LDMOS transistor BLF2022-125 PINNING FEATURES • 100 % tested under single carrier 3GPP W-CDMA

CBVK741B019

Abstract: F63TNR FDD603AL FDD6680
Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This

BLF2022-70

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Nov 27 2002 May 17 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 PINNING - SOT502A

BLF2022-120

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PINNING - SOT539A FEATURES • High power gain

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 FEATURES PINNING - SOT502A

smd transistor marking C14

Abstract: TRANSISTOR SMD MARKING CODE w2 smd TRANSISTOR code marking w2 smd code marking C8 all transistor book
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING - SOT502A