TRANSISTOR W BH 212 Search Results

Contextual Info: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlingtion Power Transistor PMD16K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO(sus)= SOV(Min)

Contextual Info: J.£.is.£.u ^s-mL-C-onauctoi -I 10 duct i, Line, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP8N60 N-Channel Mosfet Transistor • FEATURES • Drain Current-ID= 7.5A@ TC=25"C • Drain Source Voltage-

Contextual Info: , L/nc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF push-pull power transistor FEATURES • Double Input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

2SA1117

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation

Contextual Info: c2\£.w J. nc. tU TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA. Silicon NPN Power Transistor BUY56 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=160V(Min.) • Low Collector Saturation Voltage:V CE (sat)=1.5V@lc=7A

Contextual Info: zSzmi-Conauctoi \P\odu.ci^, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY58 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 160V(Min.) • Low Collector Saturation Voltage:V CE (.at)=1.3V@l c =10A

Contextual Info: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA900 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO=-18V(Min) • Good Linearity of I>E • Low Collector Saturation Voltage

Contextual Info: <zEs.mL-don.au.ctot Lpioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor BDY54 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(susr 120V(Min.)

6 Pin LED PIRANHA

Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
Contextual Info: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable

Contextual Info: BSP 129 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 240 V ¡o 0.2 A ^DS on 20 £2 N channel Depletion mode High dynamic resistance Available grouped in VGS(ttl) Type Ordering Code Tape and Reel Information Pin Conf gura tion M arking

Contextual Info: POlilEREX INC m 3*1E D • 7Stm b51 000407b fl H P R X u /a u x T-l'l-lZ KR221K03 Powerex, Inc., Wills Street, Youngwood, Pennsylvania IS697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Chopper Darlington

BUK443-60A

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

TRANSISTOR bH-16

Abstract: bh16 transistor BH-16 transistor BCP53T1 BH onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

Contextual Info: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

EN5387

Abstract: VPS10S 101PC be432
Contextual Info: Ordering num ber : EN5307 Wide-Bandwidth Output Module video pack VPS10S sa/imi CRT Display Video Output Amplifier: High-Voltage, Wideband Amplification OFeatures Package Dimensions * H igh output voltage and wide b an d w id th m ake the VPS 1OS optim al for use in

Integrated Inductive Components

Abstract: TB 2929 H amplifier PHILIPS ferrite transformer cores magnetic amplifier saturable core planar transformer formula Indiana general ferrite core MeFe2O4 TRANSISTOR PHILIPS 8050 3C30 Philips KS capacitors
Contextual Info: technical note IIC Integrated Inductive Components Philips Components IIC Integrated Inductive Components Contents 1 Introduction 3 Features and Applications 4 Design example 8 Materials 9 Type Number structure 14 Environmental aspects 14 Product range 14

MOTOROLA circuit for mrf150

Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

smd transistor AFQ 36

Abstract: P-TQ220-5-1 transistor c160 type TLE4270 smd transistor 7D QK55 TRANSISTOR T0220 AEP01922 AEP02172 Q67000-A9209
Contextual Info: fi235bD5 O O l b b l ? ATT S IEM EN S T L E 427 0 5-V Low -D ro p Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms

ifm D 45128

Abstract: kd 2060 transistor
Contextual Info: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents

2N6439

Abstract: BH Rf transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.

Contextual Info: S3E D FUJITSU LTD • 374T?5b QQDEBbü 3öb H F C A J r? Jan u ary 1992 E dition 1.0 ^ FUJITSU DATA S H E ET : MB4752A SUBSCRIBER LINE INTERFACE 1C DESCRIPTION The Fujitsu MB4752A is designad for PBX Private Branch Exchange , it has battery feed, supervision and 4-wire to 2-wire conversion functions.

AGP 9805

Abstract: transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Jan 08 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1997 Oct 14 PHILIPS Philips Semiconductors Product specification

TEMPLATEA

Abstract: kd 2060 transistor
Contextual Info: .co m Original Device Manual CabinetController w.if m CR0303 Runtime system v05 ele ifm 7390669_05_UK 2014-08-19 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile CabinetController CR0303 Runtime System V05 2014-08-19 .co m Contents

BCX70

Abstract: BCX71 BCX71G BCX71H BCX71J BCX71K BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX71 series PNP general purpose transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 20 Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES