TRANSISTOR W 4 Search Results

BC450

Contextual Info: BC450 PNF SILICON TRANSISTOR « w w w w w w iw iw iw im m w w w w w n n n n n n n n n n n w iw iw iw iw iw w w w w w w w w w w w in n í^ ^ DESCRIPTION P4.68CÛ.18J BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly

Contextual Info: FF 400 R 06 KL 2 Thermal properties Therm ische Eigenschaften 0,0345°C/W DC, pro Baustein / per module 0,069 °C/W DC, pro Zweig / per Arm 0,02 °C/W pro Baustein / per module 0,04 °C/W pro Zweig / per Arm Transistor Transistor Elektrische Eigenschaften

Contextual Info: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties

1BW TRANSISTOR

Contextual Info: 7=3 4’ 3 / FF 75 R 06 KF EUPEC S5E 34035^7 Rthjc Elektrische Eigenschaften 00Q 02G 5 Thermische Eigenschaften Transistor Transistor D Electrical properties RthCK 1 b 1! MUREC Thermal properties 0,175 °C/W 0,35 °C/W 0,06 °C/W 0,12 °C/W DC, pro Baustein / per module

FF150

Contextual Info: FF 150 R 06 KF 3 Thermische Eigenschaften Transistor Transistor R th jc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 600 V 150 A 0,08 CC/W 0,16 °C/W 0,03 C/W 0,06 °C/W 150 °C - 4 0 / + 150 °C - 40 / + 125 °C

W05BE

Abstract: 2-32B1C
Contextual Info: TOSHIBA MP4507 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

Contextual Info: MP4513 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP451 3 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA MP4021 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4021 HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

Contextual Info: MP4013 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP401 3 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING.

Contextual Info: TOSHIBA MP4504 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4504 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE INDUSTRIAL APPLICATIONS Unit in mm 31.5 ±0.2 LOAD SWITCHING.

7400A

Abstract: 0200C
Contextual Info: FF 400 R 06 KF 3 Therm ische Eigenschaften Thermal properties Rthjc DC, pro B austein/p e r module 0,0345°C/W DC, pro Zweig / per am 0,0690°C/W RthCK pro Baustein/p e r module 0,0200°C/W pro Zweig /p e r arm 0,0400°C/W Transistor Transistor Elektrische Eigenschaften

Contextual Info: FF 150 R 06 KF 3 Therm ische Eigenschaften Transistor Transistor R t h jc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values RthCK 600 V Ic 150 A 0,08 CC/W 0,16 °C/W C/W 0 ,0 3 °C/W 0,0 6 150 - 4 0 / + 150 - 4 0 / + 125

Contextual Info: T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE MP4503 SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4503 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: MP4301 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M PZL 3 n 1 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

FZ 300 R 06 KL

Contextual Info: FF 400 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V cE S Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,0345°C/W DC, pro Z w e ig /p e r arm

Contextual Info: TOSHIBA MP4303 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M P 4 3 fl 3 • v ■ ■ ■ v w mm HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD

Contextual Info: MP4020 T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4020 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

Contextual Info: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

Contextual Info: TOSHIBA MP4305 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M Pa i n ç • V ■ ■ ■ V w MT HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD

TRANSISTOR S 838

Abstract: 339 marking code transistor TR13 339 marking code transistor manual
Contextual Info: Package Details DPAK Transistor Case Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Transistor Case Tape Dimensions and Orientation (Dimensions in mm)

Contextual Info: T O SH IB A MP4507 TOSHIBA PO W ER TRANSISTOR M OD ULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING

Contextual Info: FZ 400 R 12 KL Transistor Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module 0,052 °C/W pro Baustein / per module 0,03 Electrical properties °C/W Maximum rated values V cES 1200 V 400 A Ic

L33 TRANSISTOR

Abstract: transistor L33 FA1A4M 1A4M
Contextual Info: DATA SHEET |\J P C " / SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES » Resistors Built-in TY PE in millimeters W— 2 .8 ± 0.2 1.5 0.651c O— W V Ri -v w -4 * • - B 3- : ÒE