TRANSISTOR W 4 Search Results

Contextual Info: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties

W05BE

Abstract: 2-32B1C
Contextual Info: TOSHIBA MP4507 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

Contextual Info: MP4513 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP451 3 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: MP4013 TOSHIBA TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP401 3 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING.

Contextual Info: CMPT491E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT491E type is an Enhanced version of the industry standard 491 NPN silicon transistor. This device is manufactured by the

Contextual Info: MP4020 T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4020 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

Contextual Info: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

TRANSISTOR S 838

Abstract: 339 marking code transistor TR13 339 marking code transistor manual
Contextual Info: Package Details DPAK Transistor Case Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Transistor Case Tape Dimensions and Orientation (Dimensions in mm)

Contextual Info: CMPT4209 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT4209 is a PNP Silicon Transistor designed for high speed switching applications. MARKING CODE: 4209 SOT-23 CASE MAXIMUM RATINGS: TA=25°C

Contextual Info: NXP UHF power LDMOS transistor BLF884P S 350 W LDMOS RF power transistor for digital & analog transmitters High efficiency and excellent ruggedness make this 350 W LDMOS power transistor an ideal component for UHF broadcast transmitters and industrial applications.

igbt module bsm 200

Abstract: GB60 igbt module bsm 300 eupec igbt BSM 100 gb
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,17 K/W - - 0,29 K/W Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC

CMPT591E

Abstract: 491 marking transistor CMPT491E
Contextual Info: CMPT491E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT491E type is an Enhanced version of the industry standard 491 NPN silicon transistor. This device is manufactured by the

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

CDM 03

Abstract: AGR19045EF AGR19045XF CDR33BX104AKWS JESD22-C101A
Contextual Info: AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

2N5109

Abstract: high frequency transistor
Contextual Info: 2N5109 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 20 V PDISS 1.0 W @ TA = 25 C O 2.5 W @ TC = 75 C O CHARACTERISTICS

6603 Shenzhen

Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

K 3053 TRANSISTOR

Abstract: K 3053
Contextual Info: 2N 3053 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL General purpose : medium power amplification, commutation Usage généra! : am plificateur moyenne puissance, commutation. V CEO 40 V 'c 0,7 A Ptot 5 W Rth j-c 35°C/W

BFS20

Abstract: C307
Contextual Info: Gestempelt mit: 'W NA Marked w ith: D C Ö O rt D r w fc W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgemein HF-Anwendung in Dick- und Dunnfilmschaltungen Applications: General in RF range in thick and thin film circuits

2N3553 equivalent

Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz

BLF888

Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
Contextual Info: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W

BLF888

Contextual Info: BLF888 UHF power LDMOS transistor Rev. 01 — 16 December 2008 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W

BLF871

Abstract: J1930
Contextual Info: BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The