TRANSISTOR VCE 1000V 30A Search Results
TRANSISTOR VCE 1000V 30A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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TRANSISTOR VCE 1000V 30A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E |
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AP30G100W 30G100W | |
transistor TO-3P Outline DimensionsContextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant |
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AP30G100W Fig11. 30G100W transistor TO-3P Outline Dimensions | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30HY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM30HY-2H 30HY-2H E80276 E80271 | |
E80276
Abstract: QM30TB-2H all transistor
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QM30TB-2H E80276 E80271 E80276 QM30TB-2H all transistor | |
all transistor
Abstract: qm30tb E80276 QM30TB-2HB QM30TB-2H QM30T
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QM30TB-2HB E80276 E80271 all transistor qm30tb E80276 QM30TB-2HB QM30TB-2H QM30T | |
QM30DY-2H
Abstract: E80276 motor 28v dc dc ac power ups circuit diagram
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QM30DY-2H E80276 E80271 QM30DY-2H E80276 motor 28v dc dc ac power ups circuit diagram | |
E80276
Abstract: QM30HY-2H
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QM30HY-2H E80276 E80271 E80276 QM30HY-2H | |
E80276Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75 |
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QM30E2Y/E3Y-2H E80276 E80271 E80276 | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM30TB-2H E80276 E80271 | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30DY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM30DY-2H 30DY-2H E80276 E80271 | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2HB >«8 Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain.750 Insulated Type UL Recognized |
OCR Scan |
QM30TB-2HB E80276 E80271 | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM30E2Y/ E3Y-2H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • lc • V C EX Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75 |
OCR Scan |
QM30E2Y/ QM30E2Y/E3Y-2H E80276 E80271 | |
transistor VCE 1000V
Abstract: 2DI30Z-100 transistor VCEO 1000V Transistor AC 125 transistor transistor VCE 1000V 30A
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2DI30Z-100 transistor VCE 1000V 2DI30Z-100 transistor VCEO 1000V Transistor AC 125 transistor transistor VCE 1000V 30A | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30E 2Y /E3Y-2H Ic Collector current. 30A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain. 75 Insulated Type |
OCR Scan |
QM30E2Y/E3Y-2H E80276 E80271 | |
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QM50TB-2HB
Abstract: E80276 all transistor
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QM50TB-2HB E80276 E80271 100mA QM50TB-2HB E80276 all transistor | |
QM75DY-2H
Abstract: E80276
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QM75DY-2H E80276 E80271 QM75DY-2H E80276 | |
QM50DY-2HB
Abstract: TRANSISTOR TC 100 E80276 transistor VCE 1000V
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QM50DY-2HB E80276 E80271 100mA QM50DY-2HB TRANSISTOR TC 100 E80276 transistor VCE 1000V | |
QM50HY-2H
Abstract: transistor VCE 1000V E80276
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QM50HY-2H E80276 E80271 QM50HY-2H transistor VCE 1000V E80276 | |
EV1277
Abstract: EV-127 transistor VCEO 1000V
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EV1277 25to30k EV1277 EV-127 transistor VCEO 1000V | |
QM50DY-2H
Abstract: E80276
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QM50DY-2H E80276 E80271 QM50DY-2H E80276 | |
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Contextual Info: Advanced Power Electronics Corp. AP30G100W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1000V High Speed Switching C Low Saturation Voltage 30A IC Typical V CE sat = 3.0V at IC=30A G Industry-standard TO-3P C C RoHS-compliant, halogen-free |
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AP30G100W-HF-3 100oC AP30G100 30G100W | |
1000V 20A transistor
Abstract: 2DI30D-100 transistor VCEO 1000V
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2DI30D-100 25to30IC 1000V 20A transistor 2DI30D-100 transistor VCEO 1000V | |
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Contextual Info: fOMEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD221K03 Dual Darlington Transistor Module 30 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature |
OCR Scan |
KD221K03 Amperes/1000 KD221KD3 | |
102 TRANSISTOR
Abstract: KD221 KD221K03 VC80 X1000
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OCR Scan |
KD221 Amperes/1000 EIC20- 102 TRANSISTOR KD221K03 VC80 X1000 | |