TRANSISTOR VCBO 1000V IC 100MA Search Results

pnp transistor 1000v

Abstract: FMMT558 FMMT458 ZTX558 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

pnp transistor 1000v

Abstract: FMMT558 FMMT458 DSA003671
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

transistor VCBO 1000V IC 100mA

Abstract: pnp transistor 1000v FMMT596 DSA003699
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT596 ISSUE 3 - NOVEMBER 1995 FMMT596 ✪ PARTMARKING DETAIL – 596 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C 0.3 0.2 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 0.1 B I+/I*=10 0.3 I+/I*=10 I+/I*=50

NPN Transistor VCEO 1000V

Abstract: transistor VCE 1000V transistor VCBO 1000V IC 100mA BUL810 Halogen lighting transformer transistor VCEO 1000V electronic transformer halogen NPN Transistor 8A 1000v, NPN 8A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL810 DESCRIPTION •High Voltage Capability ·High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. ·Electronic transformer for halogen lamps

pnp transistor 1000v

Abstract: FMMT555 FMMT455 PNP POWER TRANSISTOR SOT23 ZTX554 ZTX555 DSA003698 transistor VCBO 1000V IC 100mA
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)

FMMT455

Abstract: FMMT555 transistor ztx
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 200 1 -1 400 100 -0.01 tr IC - Collector Current Amps

pnp transistor 1000v

Abstract: FMMT455 FMMT555 transistor VCBO 1000V IC 100mA DSA003671
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 1 -0.01 -1 400 100 200 tr IC - Collector Current Amps

Contextual Info: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and

transistor VCEO 1000V

Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
Contextual Info: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and

FZT696B

Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8

BUY69

Abstract: BUY69A NPN Transistor VCEO 1000V
Contextual Info: BUY69A High Voltage Power Transistor High Voltage Power Switch are designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-Emitter Sustaining Voltage-100mA VCEO sus = 400V (Minimum).

BUY69A

Abstract: BUY69 NPN Transistor VCEO 1000V
Contextual Info: 1165903 High voltage power switch. designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-emitter sustaining voltage - 100mA. • VCEO sus = 400V (minimum). • Optimum drive condition curves.

QM50TB-2HB

Abstract: E80276 all transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750

qm150dy-2hk

Abstract: QM150DY-2H Diode B2x E80276
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

Contextual Info: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor

QM75DY-2H

Abstract: QM75DY-2HB E80276
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2HB • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750

E80276

Abstract: QM300DY-2HB
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750

QM50DY-2HB

Abstract: TRANSISTOR TC 100 E80276 transistor VCE 1000V
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750

Contextual Info: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54

Contextual Info: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54

BUL52A

Abstract: semefab NPN Transistor VCEO 1000V
Contextual Info: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54