TRANSISTOR TYPES FULL Search Results

PNP switching transistor 2N3906 mhz

Abstract: transistor 2N3905 2n3906 2N3906 NPN Transistor 2N3904 CENTRAL
Contextual Info: 2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904.

NPN Transistor 10A 70V

Abstract: CJD3055 dpak code marking 33a on semiconductor npn power transistor ic 400ma CJD2955
Contextual Info: Central CJD2955 PNP CJD3055 NPN TM Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount

Darlington 40A

Abstract: NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary SILICON COMPLEMENTARY transistors darlington CJD112 CJD117 darlington complementary power amplifier NPN Transistor VCEO 80V 100V hfe 100
Contextual Info: CJD112 NPN CJD117 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching

2N3053 NPN transistor

Abstract: 2n3053 SILICON TRANSISTOR 2N3053 transistor 2n3053 2n3053 transistor 2N3053A NPN Transistor 2n3053 2N3053 NPN transistor hfe
Contextual Info: 2N3053 2N3053A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE

2n2222

Abstract: 2n2222 npn 2n2221 2N2221-2N2222 npn 2n2222 transistor 2n2222 npn transistor general purpose 2n2222 npn switching transistor power transistor 2n2222 2N2222 hfe
Contextual Info: 2N2221 2N2222 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221, 2N2222 types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

vce 500v NPN Transistor

Abstract: vbe 10v, vce 500v NPN Transistor marking JC diode dpak code marking JC CJD50 NPN Silicon Power Transistor DPAK CJD47
Contextual Info: Central CJD47 CJD50 TM Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching applications.

BC817

Contextual Info: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound

BC848A

Contextual Info: BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary PNP Types: BC856 – BC858   For switching and AF Amplifier Applications Case: SOT23 Case material: molded plastic, “Green” molding compound

marking P20 SOT23

Abstract: marking code p13 P08 transistor P17 MARKING MARKING P04
Contextual Info: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2

an 7314

Abstract: ULN2803AN ULN2803ADW 500mA-rated ULN2803ADWR
Contextual Info: ULN2803A DARLINGTON TRANSISTOR ARRAY SLRS049E − FEBRUARY1997 − REVISED JULY 2006 D 500-mA Rated Collector Current Single D D D D D DW OR N PACKAGE (TOP VIEW Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of

MARKING CODE n20

Abstract: DDTC144ECAQ-13-F N20 marking transistor marking n20
Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2

1N3064

Abstract: ULN2004AI ULN2004AID ULN2004AIDE4 ULN2004AIDG4 ULN2004AIDR ULN2004AIDRE4 ULN2004AIN ULN2004AINSR
Contextual Info: ULN2004AI HIGHĆVOLTAGE HIGHĆCURRENT DARLINGTON TRANSISTOR ARRAY SLRS055 − APRIL 2004 D 500-mA-Rated Collector Current D D D D D, N, OR NS PACKAGE TOP VIEW (Single Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of

ULN2803ADW

Abstract: automotive relay driver circuit using darlington
Contextual Info: ULN2803A DARLINGTON TRANSISTOR ARRAY SLRS049E − FEBRUARY1997 − REVISED JULY 2006 D 500-mA Rated Collector Current Single D D D D D DW OR N PACKAGE (TOP VIEW Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of

Contextual Info: ULN2803A DARLINGTON TRANSISTOR ARRAY SLRS049E − FEBRUARY1997 − REVISED JULY 2006 D 500-mA Rated Collector Current Single D D D D D DW OR N PACKAGE (TOP VIEW Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of

ic n03

Abstract: transistor Marking code n03
Contextual Info: DDTC R1-ONLY SERIES E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistor, R1 only “Lead Free”, RoHS Compliant (Note 1)

2SK163 spice model

Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
Contextual Info: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed

NDH2415SC

Abstract: ei ferrite core NDH2412SC
Contextual Info: NDH Series www.murata-ps.com Isolated 3W Dual Output DC/DC Converters SELECTION GUIDE FEATURES Output Current Rated Output Voltage Min Load3 Full Load V mA mA Order Code Input Voltage V NOM. Input Current2 mA Efficiency (MIN.) % Isolation Capacitance pF

Contextual Info: NDH Series www.murata-ps.com Isolated 3W Dual Output DC/DC Converters Isolation Capacitance Min Load3 Full Load Efficiency MIN. Order Code Output Current Input Current2 Input Voltage Rated Output Voltage SELECTION GUIDE V (NOM.) V mA mA mA % pF NDH2412SC

ST100

Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
Contextual Info: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.

2N2222

Abstract: 2N2904 BY205-400 D44H11 D45H11 TIPL770 by205
Contextual Info: TIPL770 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 850 Volt Blocking Capability C 2 ● 50 W at 25°C Case Temperature

0.18-um CMOS technology characteristics

Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V
Contextual Info: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low

2S4M

Abstract: 2S2M 2S4M nec scr D1353 inverter grade SCR Nec scr 02
Contextual Info: DATA SHEET THYRISTORS 2S2M, 2S4M 2 A HIGH-SPEED SWITCHING SCR The 2S2M and 2S4M are P-gate fully diffused mold SCRs PACKAGE DRAWING UNIT: mm with an average on-current of 2 A. The repeat peak off-voltages (and reverse voltages) are 200 V and 400 V. FEATURES

circuit diagram 230VAC to 5VDC POWER SUPPLY

Abstract: Selex solenoid valve sensor circuit diagram circuit diagram water level probe sensor liquid level sensor circuit
Contextual Info: LIQUID LEVEL SENSORS CONNECTION DIAGRAM pins viewed from below SELEX 2 (high liquid level sensing) L Power _y-\ Probe 1 (ormetai wal O' —o T E M P “TRO N * Senses liquid presence by detecting free ions * High immunity to probe deposits * Full galvanic isolation

4008B

Abstract: HCC4008B HCC4008BF HCF4008B HCF4008BC1 HCF4008BEY HCF4008BM1 bi 370 transistor
Contextual Info: HCC/HCF4008B 4-BIT FULL ADDER WITH PARALLEL CARRY OUTPUT . . . . . . 4 SUM OUTPUTS PLUS PARALLEL LOOKAHERD CARRY-OUTPUT HIGH-SPEED OPERATION-SUM IN-TO-SUM OUT 160ns typ. : CARRY IN-TO-CARRY OUT 50ns (typ.) AT VDD = 10V, CL = 50pF QUIESCENT CURRENT SPECIFIED TO 20V