TRANSISTOR TP 154 Search Results

BC237

Abstract: 2N3819 junction fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN  Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs

transistor 21789

Abstract: 0965 TRANSISTOR ATC 1595
Contextual Info: ERICSSON ^ PTE 10101 60 Watts, HF-1.0 GHz LDMOS Field Effect Transistor Description The 10101 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 60 w a tts m inim um o u tp u t power. N itride surface

transistor 21789

Abstract: ERICSSON 10031 PTF 10031
Contextual Info: ERICSSON í PTF 10031 45 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10031 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 45 w a tts m inim um o u tp u t power. N itride surface

Contextual Info: N AMER PHILIPS/DISCRETE b=lE » b b S S IS l 002^154 HS1 IAPX BLV91 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile

6R099C6

Abstract: 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 IPP60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6

6R099C6

Abstract: CoolMOS TC 6R099C6 6R099 6r099c6 mosfet Diode SMD SJ 36 IPB60R099C6 transistor 6R099C6 IPP60R099C6 IPW60R099C6 6R099* TO220
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6

6R099C6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 0.9, 2009-09-07 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6

TA7341P

Abstract: R/TA7341P
Contextual Info: TOSHIBA-, ELECTRONIC DE D Ë | cI0Iì7a47 DD171S4 S | ~ 02E 17 154 909 72 47 fO'SH IB A. E L É C T R Ò N IC 71 D TA7341P T-77-ZI INTERPROGRAM SENSOR 1C Unit in m m The TA7341P is an interprogram sensor IC designed 25.0 MA X for one-program-skipping Car Stereo or radio cassette

H5052

Abstract: MAX1004
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung

FP20R06KL4

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

FS20R06XL4

Abstract: transistor daten
Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS20R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

FB20R06KL4B1

Abstract: ir igbt
Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung

FP20R06KL4

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

tda8380 power supply

Contextual Info: Preliminary specification Philips Semiconductors Integrated Circuits Control circuit for switched-mode power supplies TDA8380 G E N E R A L D E S C R IP T IO N T he T D A 8 3 8 0 is an integrated c irc u it intended fo r use as a c o n tro l c irc u it in low -cost switched m ode

FS20R06XL4

Abstract: INVERTER 50 kW
Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS20R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung

Gleichrichter

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung

FP20R06KL4

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

FB20R06KL4B1

Abstract: FB20R06KL4
Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung

Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

mb7116

Abstract: MB7115 MB7116E
Contextual Info: FU JITSU PROGRAMMABLE SCHOTTKY 2048-B IT READ ONLY MEMORY MB7115E/H MB7116E/H/Y MB7115L MB7116L N ovem ber 19Ô7 E d itio n 2 .0 SCHOTTKY 2048-BIT DEAP PROM {512 WORDS x 4 BITS The Fujitsu MB 7115 and MB 7116 are high speed S c h o ttk y T T L e lectrically

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET_ _ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for