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    TRANSISTOR TOSHIBA K4108 Search Results

    TRANSISTOR TOSHIBA K4108 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
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    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
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    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
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    		Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR TOSHIBA K4108 Datasheets Context Search

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    toshiba k4108

    Abstract: K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410
    Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current


    Original     		2SK4108 toshiba k4108 K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410 PDF

    K4108

    Abstract: toshiba k4108 2SK4108 transistor k4108
    Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current


    Original     		2SK4108 K4108 toshiba k4108 2SK4108 transistor k4108 PDF

    toshiba k4108

    Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
    Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK4108 150lled toshiba k4108 k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108 PDF