TRANSISTOR TO-92 2N5401 Search Results

MARKING G3 Transistor

Abstract: Transistor TO-92 2N5551 2N5401 2N5551
Contextual Info: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.160v)

2n5401 transistor

Abstract: 2n5401TRANSISTOR transistor 2N5401 2N5401 Transistor TO-92 2N5401
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.160v)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5401 TRANSISTOR PNP 1. EMITTER FEATURES z Switching and Amplification in High Voltage z Applications such as Telephony z Low Current z High Voltage 2. BASE

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

2N5401

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TO-92 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM : - 0.6 Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range

2N5401

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5401 TO-92 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM : - 0.6 Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range

2n5401 transistor

Abstract: 2n5401TRANSISTOR 2N5401
Contextual Info: N n n n m TO-92 Piasti -Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE Powe dissipation Pcm : 0.625 W (Tamb=25°C) Collecto cu ent : - 0.6 A Collecto -base voltage Icm 1.EMITTER 2.BASE V ( br)cbo : -160 V Ope ating and storage junction temperature range

Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE

Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE

2N5401

Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE

transistor 2n5401

Abstract: transistor 2N5401L 2n5401l 2N5401 2n5401 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number

TRANSISTOR 2n5401

Abstract: 2N5401
Contextual Info: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number

C2N5401

Abstract: 2N5401 transistor 2N5401 of pnp transistor 2n5401
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L „ ORDERING INFORMATION Order Number

2N5401L-x-T92-B

Abstract: 2N5401L Transistor TO-92 2N5401 of pnp transistor 2n5401
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N5401L-x-AB3-R

transistor 5401

Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

2N5401 fairchild

Abstract: transistor 2N5401 2N5401 2n5401 transistor
Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

Continental Device India Limited 2N5401

Abstract: 2N5401
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5401 TO-92 CBE BC High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified

2N5401

Contextual Info: SAM S U N G SEMICONDUCTOR INC 2N5401 | 7^4142 0Q071Ô5 7 PNP EPITAXIAL SILICON TRANSISTOR T.-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veeo=160V TO-92 • Collector Di*sJpatlon:Pc m«x =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit

vqe 14 display

Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d
Contextual Info: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 TO-92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.

transistor 2n5401

Abstract: 2N5401
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9SA TO- 92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5401 TO-92 CBE BC High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified