TRANSISTOR TO-92 2N5401 Search Results

TRANSISTOR TO-92 2N5401 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR TO-92 2N5401 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MARKING G3 Transistor Abstract: Transistor TO-92 2N5551 2N5401 2N5551 Contextual Info: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic	OCR Scan	2N5551 2N5401 MIL-STD-202, 2N5551 100MHz 250nA, 10Hzto 300ns, DS11105 MARKING G3 Transistor Transistor TO-92 2N5551	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.160v)	Original	2N5401 600mA) -50mA, 30MHz -10mA	PDF
2n5401 transistor Abstract: 2n5401TRANSISTOR transistor 2N5401 2N5401 Transistor TO-92 2N5401 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.160v)	Original	2N5401 600mA) -50mA, 30MHz -10mA 2n5401 transistor 2n5401TRANSISTOR transistor 2N5401 2N5401 Transistor TO-92 2N5401	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5401 TRANSISTOR PNP 1. EMITTER FEATURES z Switching and Amplification in High Voltage z Applications such as Telephony z Low Current z High Voltage 2. BASE	Original	2N5401	PDF
MJE2955 Abstract: 2N3645 bc557 BC307 BC212 Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer	OCR Scan	O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212	PDF
2N5401 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TO-92 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM : - 0.6 Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range	Original	2N5401 -10mA 30MHz 2N5401	PDF
2N5401 Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5401 TO-92 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM : - 0.6 Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range	Original	2N5401 -10mA 30MHz 2N5401	PDF
2n5401 transistor Abstract: 2n5401TRANSISTOR 2N5401 Contextual Info: N n n n m TO-92 Piasti -Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE Powe dissipation Pcm : 0.625 W (Tamb=25°C) Collecto cu ent : - 0.6 A Collecto -base voltage Icm 1.EMITTER 2.BASE V ( br)cbo : -160 V Ope ating and storage junction temperature range	OCR Scan	2N5401 -50mA -10mA 2n5401 transistor 2n5401TRANSISTOR	PDF
Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-Emitter Voltage: VCEO=-150V Collector Dissipation: Pc max =625mW High current gain 1 APPLICATIONS Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE	Original	2N5401 -150V 625mW QW-R201-001	PDF
Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-Emitter Voltage: VCEO=-150V Collector Dissipation: Pc max =625mW High current gain 1 APPLICATIONS Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE	Original	2N5401 -150V 625mW	PDF
2N5401 Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-Emitter Voltage: VCEO=-150V Collector Dissipation: Pc max =625mW High current gain 1 APPLICATIONS Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE	Original	2N5401 -150V 625mW QW-R201-001 2N5401	PDF
transistor 2n5401 Abstract: transistor 2N5401L 2n5401l 2N5401 2n5401 transistor Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number	Original	2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K transistor 2n5401 transistor 2N5401L 2n5401l 2N5401 2n5401 transistor	PDF
TRANSISTOR 2n5401 Abstract: 2N5401 Contextual Info: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	Original	2N5401 625mW Width300s, -120V, -10mA, -50mA, TRANSISTOR 2n5401 2N5401	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number	Original	2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K	PDF

C2N5401 Abstract: 2N5401 transistor 2N5401 of pnp transistor 2n5401 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number	Original	2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-F-R 2N5401L-x-AB3-F-R 2N5401-x-T92-C-B 2N5401L-x-T92-C-B 2N5401-x-T92-C-K 2N5401L-x-T92-C-K C2N5401 2N5401 transistor 2N5401 of pnp transistor 2n5401	PDF
2N5401L-x-T92-B Abstract: 2N5401L Transistor TO-92 2N5401 of pnp transistor 2n5401 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N5401L-x-AB3-R	Original	2N5401 OT-89 -150V 2N5401L-x-AB3-R 2N5401G-x-AB3-R 2N5401L-x-T92-B 2N5401G-x-T92-B 2N5401L-x-T92-K 2N5401G-x-T92-K 2N5401L-x-T92-R 2N5401L Transistor TO-92 2N5401 of pnp transistor 2n5401	PDF
transistor 5401 Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor	Original	2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application	PDF
2N5401 fairchild Abstract: transistor 2N5401 2N5401 2n5401 transistor Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor	Original	2N5401 625mW 2N5401 fairchild transistor 2N5401 2N5401 2n5401 transistor	PDF
Continental Device India Limited 2N5401 Abstract: 2N5401 Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5401 TO-92 CBE BC High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified	Original	ISO/TS16949 2N5401 25deg C-120 Continental Device India Limited 2N5401 2N5401	PDF
2N5401 Contextual Info: SAM S U N G SEMICONDUCTOR INC 2N5401 \| 7^4142 0Q071Ô5 7 PNP EPITAXIAL SILICON TRANSISTOR T.-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veeo=160V TO-92 • Collector Di*sJpatlon:Pc m«x =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit	OCR Scan	2N5401 Vcco-160V 825mW 100/rA, T-29-21	PDF
vqe 14 display Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d Contextual Info: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim	OCR Scan	2N5551 2N5401 MIL-STD-202, 100MHz 250nA, 300ps, DS11105 2N5551 vqe 14 display vqe 14 e led display vqb 200 d	PDF
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 TO-92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.	Original	2N5401 25deg C-120	PDF
transistor 2n5401 Abstract: 2N5401 Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9SA TO- 92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.	Original	2N5401 25deg C-120 transistor 2n5401 2N5401	PDF
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5401 TO-92 CBE BC High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified	Original	2N5401 25deg C-120	PDF

TRANSISTOR TO-92 2N5401 Search Results

TRANSISTOR TO-92 2N5401 Result Highlights (5)

TRANSISTOR TO-92 2N5401 Datasheets Context Search

MARKING G3 Transistor

2n5401 transistor

MJE2955

2N5401

2N5401

2n5401 transistor

2N5401

transistor 2n5401

TRANSISTOR 2n5401

C2N5401

2N5401L-x-T92-B

transistor 5401

2N5401 fairchild

Continental Device India Limited 2N5401

2N5401

vqe 14 display

transistor 2n5401