TRANSISTOR TO-126 OUTLINE DIMENSIONS Search Results

Contextual Info: Darlington Power Transistor Features: • Silicon NPN • Darlington • High DC current gain Fig. 1 Simplified Outline TO-126 and Symbol Pinning Pin Description 1 Emitter 2 Collector; connected to mounting base 3 Base Absolute Maximum Ratings (Ta = 25°C)

toshiba mosfet

Abstract: jeita To-126 transistor to6 trangister TO126 package
Contextual Info: Trangister Outline Package TO-126 Package Outline Dimensions Outline Dimensions Unit: mm 8.3 max 11.0 ±0.3 3.5 φ3.1 ±0.1 1.9 max 0.75 ±0.15 2.3 ±0.1 2 3 0.75 ±0.15 3.4 max 1 1.6 2.3 ±0.1 14.0 min 1.9 max 1.0 max Toshiba package name Toshiba package code

TRANSISTOR nf 842

Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz

TRANSISTOR nf 842

Abstract: D 843 Transistor transistor su 312
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 * EMITTER 3 « COLLECTOR 2.6 2.4 _ 1.02 0.8ST 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS

cd 1191 cb

Abstract: lex m01 001
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS HIGH fT : Units in mm PACKAGE OUTLINE M01 14 G Hz T Y P at 3 V, 10 mA LOW NOISE FIGURE: TOP VIEW IMF = 1 .6 dB TYP at 2 GHz — HIGH GAIN: 2.1 ± 0.1 - -1.25 ± 0 .1 -*

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P -N - P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .14 "Iprüi Pin configuration 1 = BASE 2 » EMITTER 3 * COLLECTOR ABSOLUTE MAXIMUM RATINGS Colleetor-emitter voltage Collector current DC

CMBT4403

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N -P transistor M arking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 _L 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 1.2 2.4 R0.1 .004 "

Contextual Info: MITSUBISHI RF POWER MODULE b 2 4 ci ß 2 ci D017222 13b • _ M57764 806-825MHZ, 12.5V, 20W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm B LO C K DIAGRAM PIN : Pin © VCCI @VCC2 @ VCC3 PO © G ND : RF INPUT : 1st. DC S U P P LY : 2nd. DC S U PPLY

IC 4047

Abstract: bf 695 NE685 NE696M01 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz

nec K 3570

Abstract: bf 695 bjt 522 NE685 NE696M01 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE

NE685

Abstract: NE696M01 NE696M01-T1 S21E lex m01 001
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz

ic CD 4047

Abstract: lex m01 001 ha 431 transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE696M01 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M01 HIG H fT: 14 GHz TYP at 3 V, 10 mA TOP VIEW LOW N O IS E F IG U R E : NF = 1.6 dB TYP at 2 GHz - HIG H G A IN : •— 1.25 + 0.1-»

transistor c 458

Abstract: BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor
Contextual Info: DISCRETE SEMICONDUCTORS BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

F1 J37

Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm

TRANSISTOR BI 243

Abstract: tr/TRANSISTOR BI 243
Contextual Info: E Q SLOTTED OPTICAL SWITCH OP TO E L E CT R ON I CS H21A4/5/6 PACKAGE DIMENSIONS SYMBOL -D1 - ©T — lX 3 | g b! SECTION X - xT~ LEAD PROFILE S T 1339-01 MILLIMETERS M!N. MAX. INCHES MIN. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119

st1143

Abstract: ic st1143 TRANSISTOR BI 243 STI339-02 H21A5 H21A H21A4 H21A6
Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS H21A4/5/6 PACKAGE DIMENSIONS SYMBOL - D i - i D2h- MILLIMETERS MIN. — I »>i i © "t= r p ¿ 5 b! SECTION X - X LEAD PROFILE ST1339-01 T MAX. INCHES MIN. MAX. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 A,

IC 7107

Abstract: IB 6410 NE685 NE696M01 NE696M01-T1 NE696M01-T1-A S21E lex m01 001
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE

LB 1639

Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

TRANSISTOR BI 243

Abstract: ST1318 CNY28 ST1317 ST1609 ST1315 tip 147 TRANSISTOR
Contextual Info: C ? Q SLOTTED OPTICAL SWITCH OPTOELECTRONICS CNY28 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. r -4>p A INCHES MIN. MAX. 10.7 11.0 .422 .433 .125 i b,r L A, 3.0 3.2 .119 bi Aj 3.0 3.2 .119 .125 .024 .030 SECTIO N X - X f LEAD PROFILE @b b, .750 .50 NOM.

2SC1365

Abstract: 2SC1252 NE741 NE74113 2SC*1365 NE74100 NE74114
Contextual Info: N E C / C A L IF O R N I A Sb E NEC D b4S74m ÜGQ547Ö b S l H N E C C NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR T *^ "3 > -0 £ > OUTLINE DIMENSIONS FEATURES Unita In mm NE74100 (CHIP) • H IG H GAIN BAN DW IDTH P R O D U C T : fr = 1.7 GHz

transistor k 265

Abstract: NE64700
Contextual Info: K-BAND BIPOLAR OSCILLATOR TRANSISTOR NE64700 OUTLINE DIMENSIONS Units in jun FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64700 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES Bonding Area ELECTRICAL CHARACTERISTICS ( t a - 25-cj