TRANSISTOR TC 100 Search Results

ISV50

Contextual Info: DTC125TU/DTC125TK/DTC125TS/DTC125TF DTC125TL/DTC125TA/DTC125TV h -y > v * £ /T ra n s is to rs D TC 125TU /D TC 125TK /D TC 125TS D TC 125TF/D TC 125TL/D TC 125TA DTC125TV suut-7>->'*$ ^ • », 'AM'O.Vvti-r 7 ^/Transistor Switch Digital Transistors Includes Resistors

Contextual Info: DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV h 7 > y ^ ^ / T ransistors D TC 314TK /D TC 314TS /D TC 314TF D TC 314TL/D TC 314TA /D TC 314TV ^ a — t - -f > v £ JU h 7 > V S U a r t i E 7 ^-/Transistor Switch Digital Transistors (Includes Resistors

Contextual Info: DTC363EK/DTC363ES/DTC363EF DTC363EL/DTC363EA/DTC363EV I ' 7 > y X $ /Transistors D TC 363EK /D TC 363ES/D TC 363EF D TC 363EL/D TC 363EA /D TC 363EV 5 l- T < > ? « T - > 'W h 7 > - /X J g j S r t a h 7 > -> ' X 2 ^-/Transistor Switch Digital Transistors (Includes Resistors)

Contextual Info: DTC143XU/DTC143XK/DTC143XS/DTC143XF DTC143XL/DTC143XA/DTC143XV / T ransistors D TC 143X U /D TC 143X K /D TC 143X S D TC 143XF/D TC 143XL/D TC 143X A DTC143XV xi h =7 X 9 X " j -^/Transistor Switch Digital Transistors Includes Resistors • ^•JK '+S ^/'D irfen sion s (U n it: mm)

Contextual Info: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV /T ra n sisto rs D TC 144T U /D TC 144T K /D T C 144TS D TC 144T F/D TC 144TL/D TC 144TA DTC144T V 5s $h t-7 > 7- 9 mtnftM h > v * 9 7 ^/Transistor Switch Digital Transistors Includes Resistors)

Contextual Info: DTC123YU/DTC123YK/DTC123YS/DTC123YF DTC123YL/DTC123YA/DTC123YV N 7 > ' / 7 $ /T ran sisto rs D TC 123Y U /D TC 123Y K /D TC 123Y S D TC 123YF/D TC 123YL/D TC 123Y A DTC123YV 7 ^/Transistor Switch Digital Transistors Includes Resistors • £ W J 7 i£ E I/ D im e n s io n s (Unit : mm)

DTC114WS

Contextual Info: DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV Is ~7 > v 7. $ / T ransistors DTC114W U /D TC 114W K /D TC 114WS D TC 114W F/D TC 114W L/D TC 114WA DTC114W V ^-/Transistor Switch Digital Transistors Includes Resistors • f7 • $\-MT f& H /D im e n s io n s (Unit : mm)

Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch

Contextual Info: DTC363TK/DTC363TS/DTC363TF DTC363TL/DTC363T A / DTC363TV h 7 > y ^ ^ / T ransistors D TC 363TK /D TC 363TS /D TC 363TF DTC363T L/D TC 363T A /D T C 363T V S i M h 7 > y 'X ^ y ^/Transistor Switch Digital Transistors (Includes Resistors) • T triE I/D im e n s io n s ( U n it: mm)

SI-8020

Abstract: str7103 ic 8022 SI 122 D transistor 152 M SI-8021 STR7003 SI-8023 STR7101 SI-8020
Contextual Info: SWITCHING-TYPE 2-PACK TYPE REGULATORS M axim um Ratings (TA=25°C) Type No. Power Transistor Collector Current Power Dissipation W ithstand Voltage (V) Ic (A) 60 (peak 7.5) 60 (peak 15) STR7001 Operating Temperature (Tc=25°C) (Tc) PD (W) Ta (“ C) 100

Contextual Info: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max

Contextual Info: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter

marking tA2

Contextual Info: D TA 144V U A / D TA 144V K A / D TA 144VS A Transistors D TC 144V U A / D TC 144V K A / D TC 144V S A I Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA •F eatures 1 ) Built-in bias resistors enable the configuration of an inverter

Contextual Info: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features •         VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch

Contextual Info: o re TIP31C NPNEXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The U TC TIP31C is a NPN expitaxial planar transistor, designed fo r using in general purpose am plifier and switching applications. FEATURE ‘ C om plem ent to tip32C

D2406 transistor

Abstract: D2406 2SD2406
Contextual Info: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA50JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 25 mΩ 100 A 105 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Contextual Info: GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1700 V 25 mΩ 100 A 95 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area

D2406 transistor

Abstract: 2SD2406 D2406
Contextual Info: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

D2406 transistor

Contextual Info: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 25 mΩ 100 A 95 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area

BUZ172

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 172 • P channel • Enhancement mode • Avalanche rated Type v DS BUZ172 - 100 V —5.5 A ^DS on Package 1> Ordering Code 0.6 TO-220 AB C67078-A1451-A2 n Maximum Ratings Parameter Symbol Tc = 37 "C Tc = 25 "C Continuous drain current,