TRANSISTOR T79 Search Results

Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,

transistor marking T79 ghz

Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz
Contextual Info: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications

transistor marking T79 ghz

Abstract: marking T79 MARKING T79 "NPN Transistor" 2SC5508 2SC5508-T2 C10535E transistor marking T79
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

MJE 15024

Abstract: NE662M04 transistor T79 ghz NA 6884 7011 NPN TRANSISTOR 0411 02 027 000 T79 "NPN Transistor"
Contextual Info: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm • Flat Lead Style for better RF performance

transistor marking T79 ghz

Abstract: MARKING T79 "NPN Transistor" marking T79 transistor marking T79 2SC5508 2SC5508 application transistor 2SC5508 PU10521EJ01V0DS 2SC5508-T2 NEC 1357
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

150J10

Abstract: 7011 NPN TRANSISTOR
Contextual Info: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm

MJE 15024

Abstract: BF111 NE662M04 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884
Contextual Info: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm

MARKING T79

Abstract: transistor marking T79 ghz
Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5508 / NE662M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES •

Contextual Info: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications

MJE 15024

Abstract: NE662M04 TRANSISTOR 9642 2SC550 2SC5508 NE662M04-T2 S21E 0411 02 027 000 007E-9
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm

ic LC 7218

Abstract: NE662M04 LC 7011 NE662M04-T2 3335 2SC5508 S21E TRANSISTOR 9642 LC 7218 SOT 663 footprint
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCH TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm

IC AT 6884

Abstract: T79 SOT 23
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

2SK49

Abstract: JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460
Contextual Info: NEC j m ^ T ix t x J u n c t io n Field E ffe ct T r a n s is t o r A 2SK49 N-Channel Silicon Junction Field Effect Transistor FM Tuner *1- ° i&MM'SLtë.ÿji'P-y V t f í O F M f ^ - B 0 / P A C K A G E DIM ENSIO NS Unit : mm O |yfs| ^ § ^ o I y fs I = 2 . 8 m ü T Y P . ( V d s = 5 . 0 V ,

Contextual Info: ¡0 FUJITSU MICROELECTRONICS 31E D D 37 MT7ti2 Ga iS L >4 0 b HBFMI 010002850201000201000201000201020100 HIGH FREQ UENCY O PE R A TIO N A L A M P L IFIE R The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology.

LM12

Abstract: lm12 op amp ILM12 LM12 OP amp IC LM12CK OF IC 723 linear regulator LM12K
Contextual Info: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic

TELEDYNE 1461

Abstract: TELEDYNE+1461
Contextual Info: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to

LM12K

Abstract: BRIDGE-RECTIFIER 5v 1A BRIDGE-RECTIFIER 15v LM12CK LM12CLK BRIDGE-RECTIFIER 100v 1a op amp 40v 100w LM12C LM12 BRIDGE-RECTIFIER operation
Contextual Info: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic

2 volt zener

Abstract: CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE
Contextual Info: HA RR IS S E M I C O N D S E C T O R H a r r i 4QE ]> • 4302571 0031746 7 BIHAS T-K-IS s C A 3 1 4 0 A C A 3 1 4 0 BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 19 9 1 Features Description • MOSFET input Stage The CA3140A and CA3140 are Integrated-circutt

REGULATOR IC 7915

Abstract: CA3160AS 7915, 15V regulator CA3130S 7915 circuit diagram GA3080
Contextual Info: HARRIS SEfllCOND SECTOR 4DE D 3 H a r r is • 43DS271 0D317ba 2 « H A S CA3160A CA3160 ' BiMOS Operational Amplifiers with MOSFET Input/CMOS Output A u gu st 1 9 9 1 Features Description • MOSFET Input Stage Provides: The CA3160A and CA3160 are Integrated circuit

OF IC 7909

Abstract: IR91308 REGULATOR IC 7909 piezoelectric alarm ic 7909 7909 regulator 7909 voltage regulator IIR91308 BD 144 transistor ic siren
Contextual Info: SHARP ELEK/ MELEC 1SE DIV D I aiflO TTà []GG203fc. T I IR 91308 Program m able Power Operational Am plifier T-79-09 IR91308 Programmable Power Operational Amplifier • Description The IR91308 is an internally compensated medium power operational amplifier, which has the added

SL560AC

Abstract: plessey SL560 SL560 PLESSEY
Contextual Info: 12E D PLESSEY SEMICO NDU CTORS • 7220513 G O 10316 b SL560AC 300MHz LOW NOISE AMPLIFIER CONFORMS TO MIL-STD-883C CLASS B This monolithic integrated circuit contains three very high performance transistors and associated biasing components in an eight-lead TO-5 package forming a 300MHz low noise

TB1238AN

Abstract: IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P
Contextual Info: ASSPs Audio & Video Equipment ICs z 62 Communications Equipment ICs z 85 High-Frequency Power Amp ICs z 88 Automotive ICs z 89 Display Driver ICs z 92 Network & Interface ICs z 95 Peripheral Equipment LSIs z 96 Digital Temperature Compensation ICs z 97 Other Consumer Product ICs & LSIs z 98

SL550G

Abstract: 7520S13 SL550 plessey radar a/plessey sl550
Contextual Info: P L E S S E Y SEMICONDUCTORS 12E D I Üw SPe L ESSIY m ic o n d u c to rs . 7520S13 000771,0 4 | mi. — . . i T - l ° \ - 0 1 - ÌO SL550G LOW NOISE WIDEBAND AMPLIFIER WITH EXTERNAL GAIN CONTROL The SL550 is a silicon integrated circuit designed for use