TRANSISTOR T5B Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

BUK553-60A

Abstract: BUK553-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D Bl 7110fiSb D0b4aEb T5b • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ G E N E R A L D E S C R IP T IO N N-cnannel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: nw JAN, JANTX, JANTXV 4N47U, 4N48U, 4N49U OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION AVAILABLE THROUGH DISTRIBUTION FEATURES: • High reliability • Base lead provided for conventional transistor biasing • Very high gain, high voltage transistor • Hermetically sealed for reliability and stability

ca3096

Abstract: CA3096AE
Contextual Info: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

100-P

Abstract: BUK553-60A BUK553-60B T0220AB
Contextual Info: P H IL I PS I N T E R N A T I O N A L bSE D HI 7 1 1 0 6 2 b Dab 4 EE b Philips Semiconductors T5b • PHIN Product Specification PowerMOS transistor BUK553-60A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

ha 431 transistor

Abstract: BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 27B2S transistor ag
Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bhSaTai DD27Ô2S RflT Philips S em iconductors Data sheet status Preliminary specification date ol Issue December 1990 Programmable unijunction transistor QUICK REFERENCE DATA DESCRIPTION A planar pnpn trigger device in a TO-72 metal envelope, intended for

BFG235

Contextual Info: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA t<5 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1) High IcMax. IcMax. = 0.5mA 2) Low VcE(sat). O ptim al fo r low v o lt­ age operation. 3) Complements the 2SA1036K/2SA1577 / 2SA854S. •E x te rn a l dimensions (Units: mm)

2n4416 transistor spice

Abstract: 2n4416 transistor 2N4416 2N4416A 2N4416 equivalent MRC167 Transistor 2N4416A uhf vhf spice
Contextual Info: • ^53=131 OOEmCH b'n HIAPX P h ilip s S e m icon d u ctors 1 P rodu ct sp ecification N AUER PHILIPS/DISCRETE b7E N-channel field-effect transistor 2N4416; 2N4416A Q UICK R E F E R E N C E DATA FEATURES • Low noise SYM BOL • Interchangeability of drain and

10DC

Abstract: TPIC6B259
Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 -A P R IL 1994 • Low r D s 0 n • • . 5 £ 2 Typical • Avalanche Energy . . . 30 mJ • Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current • • • • D w OR N p a c k a g e

ff450r12me3

Abstract: C28T sod6 SOT23 transistor R2C t60403-d4615 C-EUC1206 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip
Contextual Info: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-11-02 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.

VAC t60403

Abstract: ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
Contextual Info: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-10-07 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.

Contextual Info: S-813XXHG Series HIGH-PRECISION VOLTAGE REGULATOR T h e S -8 1 3 X X H G Series is a 3-pin positive voltage regulator that uses a C M O S process. T h e output voltage is fixed internally. T h e S -8 1 3 X X H G Series has higher accuracy of output voltage ± 2 . 4 % and n eed s a sm aller input/output

transistor t1W

Abstract: CY2037 CY2037EBWAF-IL transistor t1A 02 Crystal 32 MHz 12 pF
Contextual Info: CY2037 High Accuracy EPROM Programmable PLL Die for Crystal Oscillators igh Accuracy EPROM Programmable PLL Die for Crystal Oscillators Features Functional Description • Erasable programmable read only memory EPROM programmable die for in-package programming of crystal

Contextual Info: HST-5B Product Details Military/Ae rospace High Pe rform an ce Re lays Previous 1 . 16 17 [18] 19 20 Next Not EU RoHS or ELV Compliant Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product

1183C

Contextual Info: FemtoClock Crystal-to-LVDS Clock Generator ICS844071 DATA SHEET General Description Features The ICS844071 is a Serial ATA SATA /Serial Attached SCSI (SAS) Clock Generator. The ICS844071 uses an 18pF parallel resonant crystal over the range of 20.833MHz - 28.3MHz. For SATA/SAS

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Contextual Info: Low Skew, 1-to-6, Differential-toLVDS Fanout Buffer ICS854S006I DATA SHEET GENERAL DESCRIPTION FEATURES The ICS854S006I is a low skew, high perforICS mance 1-to-6 Differential-to-LVDS Fanout Buffer. HiPerClockS The CLK, nCLK pair can accept most standard differential input levels. The ICS854S006I is characterized to operate from either a 2.5V or a 3.3V

ICS854S006AIL

Abstract: is293 ICS854S006AGI ICS854S006I
Contextual Info: Low Skew, 1-to-6, Differential-toLVDS Fanout Buffer ICS854S006I DATA SHEET GENERAL DESCRIPTION FEATURES The ICS854S006I is a low skew, high perforICS mance 1-to-6 Differential-to-LVDS Fanout Buffer. HiPerClockS The CLK, nCLK pair can accept most standard differential input levels. The ICS854S006I is characterized to operate from either a 2.5V or a 3.3V

Contextual Info: Ordering number: EN 5081 Thick Film Hybrid IC STK392-040 No. 5081 SA\YO i 3-Channel Convergence Correction Circuit lc max = 7A) Overview Package Dimensions The ST K 392-040 is a convergence correction circuit IC for video projectors. It incorporates three output amplifiers

049P

Abstract: ICS421004I-01 ICS8421004AGI-01 ICS8421004I-01 ICS42
Contextual Info: FemtoClock Crystal-to-HSTL Frequency Synthesizer ICS8421004I-01 DATA SHEET General Description Features The ICS8421004I-01 is a 4 output HSTL Synthesizer optimized to generate Ethernet reference clock HiPerClockS™ frequencies. Using a 25MHz, 18pF parallel resonant

T3D 62

Abstract: 20MHz Crystal crystal 20Mhz CRYSTAL,20 MHZ ICS843071AGI ICS843071I
Contextual Info: FemtoClock Crystal-to-3.3V, 2.5V LVPECL Clock Generator ICS843071I DATA SHEET General Description Features The ICS843071I is a Serial ATA SATA /Serial Attached SCSI (SAS) Clock Generator. The ICS843071I uses an 18pF parallel resonant crystal over the range of 20.833MHz - 28.3MHz. For SATA/SAS

ICS8422002AGI

Abstract: ICS8422002I
Contextual Info: FemtoClock Crystal-to-LVHSTL Frequency Synthesizer ICS8422002I DATA SHEET General Description Features The ICS8422002I is a 2 output LVHSTL Synthesizer optimized to generate Fibre Channel reference clock HiPerClockS™ frequencies and is a member of the HiPerClocksTM