TRANSISTOR T0220 Search Results

wk 2 e transistor

Abstract: transistor BU 705 BUT21
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.

BUT21

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.

TRANSISTOR C 557 B

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effeot power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING-T0220AB

TRANSISTOR C 557 B

Abstract: TRANSISTOR C 557 B W 21
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING - T0220AB

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

MP-25

Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
Contextual Info: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11Al GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

Contextual Info: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11Al GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

TO-220FN

Contextual Info: Magazine T0220FN code Magazine PVC material Polyvinyl chloride Package name Renesas code TO-220FN PRSS0003AB-A Previous code T220FN Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

BUT12

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUJ301A

Abstract: T0220AB
Contextual Info: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

BUJ105A

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ205A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

T77b

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in T0220AB envelope intended for use in nigh frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

NPN Transistor VCEO 1000V

Abstract: LB 137 transistor
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in a T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

BUT12

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,