TRANSISTOR SURFACE MOUNT ND Search Results

JANTXV2N2222AUA

Abstract: transistor s71 2N2222AUA
Contextual Info: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed

Contextual Info: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating

2sc4571

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: Order th is data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor W ith M onolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSH350 HIGH VOLTAGE POWER TRANSISTORS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Form ed fo r Surface M ount Applications No Suffix • Straight Lead (“ -I “ Suffix) ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage

u92 surface mount u92 transistor

Abstract: t2406 MOTOROLA
Contextual Info: Order this data sheet by MMFT2406T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M M FT2406T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSH210 D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • High DC C urrent Gain Low C ollecto r E m itter Saturation Voltage Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

Contextual Info: KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK Load Formed for Surface M ount Application No Suffix Straight Lead (LACK, I” Suffix) E lectrically S im ila r to Popular TIP31 a n d T IP 3 1 C

Contextual Info: ell Stanford Microdevices Product Description SLN-286 Stanford M icrodevices’ SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance

Contextual Info: MOTOROLA Order this document by MSB709-RT1/D SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR 3 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Symbol Value Unit C ollector-B ase Voltage

MTD3055E

Contextual Info: MOTOROLA SC XSTRS/R F bf l E T> • b3h72SM 00^0535 330 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor D PAK for Surface or Insertion Mount

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA I ● Designer’s MTDION08E Data sheet I TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode DPAK for Surface Mount or Insertion This advanced “E” series of TMOS power MOSFETS is designed to withstand high energy in the avalanche and

t6661

Contextual Info: Order this data sheet by MMFT6661T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect TVansistor N-Channel Enhancem ent-Mode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as

Contextual Info: MOTOROLA Order this document by MTDF1N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD F1N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Dual N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M TSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

06vl

Contextual Info: MOTOROLA Order this document by MTB30N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB30N06VL TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

Contextual Info: MOTOROLA O rder this docum ent by M TB52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

Contextual Info: What HEW LETT 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Id eal for High Gain, Low C urrent A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • Typical P erform ance at

Contextual Info: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

Contextual Info: What H E W L E T T 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Id eal for High Gain, Low N oise A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • T ran sition F requ en cy

marking RK sot323

Abstract: N5212 N5211
Contextual Info: Order this data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R esisto r T ra n s is to r NPN Silicon Surface Mount Transistor W ith M onolithic Bias Resistor N etw o rk M U N5211T1 M U N5212T1 M U N5213T1 M U N 5214T1 This new series of digital transistors is designed to replace a single device and

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSH340 HIGH VOLTAGE POWER TRANSISTORS DPAK FOR SURFACE MOUNT APPLICATIONS D -P A K • L e a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s N o S u ffix • S tra ig h t L e a d (“ - I” S u ffix ) ABSOLUTE MAXIMUM RATINGS