TRANSISTOR SU 110 Search Results

Contextual Info: S AM SU N G SEMICONDUCTOR INC BCW32 1ME D 7^4145 000?a0b | NPN EPITAXIAL SILICON TRANSISTOR .T-23- I e! GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

ST T8 3580

Abstract: ST T8 3560 2SC5436 st zo 607 ce 2826 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ULTRA SU PER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: T Y P.)

Contextual Info: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

3 pin mini mold transistor

Abstract: R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2sc4226 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor
Contextual Info: DATA SHEET - SILICON TRANSISTOR 2SC4226 H IG H FREQ UENC Y LOW NO ISE A M P L IF IE R NPN SILICO N EPITAXIAL TR A N S IS T O R SU PE R M INI M O LD DESCRIPTION

A12004

Abstract: BA12003 BA12002 BA12004
Contextual Info: BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 High-Voltage, High-Current Darlington Transistor Arrays The B A 1 2001 / B A 1 2 0 0 2 / B A 1 2 0 0 3 / B A 1 2004 are high- voltage, large-current transistor arrays that utilize D arlington transistors. Built-in su rg e a b so rb in g diode,

RO SOT23-5

Contextual Info: ADVANCE INFORMATION A1/XIA1 All Inform ation in this d a ta sheet is prelim inary a nd su b je c t to change. a/97 Low-Noise9 Low-Dropout, 150mA Linear Regulators in SOT-23 T he M A X 8 8 6 7 /M A X 8 8 6 8 u se an in te rn a l P -ch a n n e l MOSFET pass transistor, w hich keeps the su p p ly cu r­

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

TF012

Contextual Info: • Features ■ ft» MOR CHIP PHOTO-TRANSISTOR 1. Developed a s a chip type SM D phot-transistor for both reverse and top su rface mounting U T m m m e iM » 2. 51-ff^aiá3.e L X 1.6(W)X 1.1(H) 2. Sm all and square size , dim ensions : 3 .2 (L )x 1.6(W)X1.1 (H)mm

169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)

MPS2907A EQUIVALENT

Contextual Info: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A | T^IMS 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

DDS-60

Abstract: NCQ1004 RL 50B
Contextual Info: NCQ1004 N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY Su r fa c e M o u n t Q u a d • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW Rds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMITS 60 ±20 0.46 0.26 ±2 TBD TBD TBD

IRFP140

Abstract: Relays 12v 31A TA17421 TB334
Contextual Info: IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU R 0N Data January 2002 T NO IBLE IRFP14 S S PO 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

2N7073

Contextual Info: SILICONIX INC 33E » f i r Si fieo n ix • 0854735 001L.D52 ö ISIX 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 'TAr Id (A) 400 0.55 9.0 1 DRAIN 2 SOURCE 3 GATE Case Isolated

Contextual Info: SIEMENS BF 775A NPN Silicon RF Transistor P relim inary Data F eature • E sp ecially su itable for a m plifiers in T V -sa t tuners E S D : E le ctro static d isch a rg e sensitive device, ob se rve handling precautions! T yp e BF 775 A O rd e rin g C ode

MRF9331

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.

BCV63

Abstract: BCV64 small signal transistor SCHMITT-TRIGGER application BCV64A 700 v power transistor
Contextual Info: ^53^31 D E V E L O P M E N T D ATA DOlSbll 5 BCV64 T h is d a ta sheet c o n ta in s advance in fo rm a tio n a n d sp e c ific a tio n s are su b ject to c hange w it h o u t notice. N AMER PH IL IP S/ DISCR ETE ObE D SILICO N PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications.

C4171

Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10
Contextual Info: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s

so C T Q 150

Abstract: 2N7077 JIS D 4215
Contextual Info: c r S ic a n ix 2N7077 J U r in c o rp o ra te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 400 r,w (A) 0.30 15 •d 1 DRAIN 2 SO U RCE 3 GATE 1 2 3 C ase Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2

c2785

Abstract: 2SK193 transistor 2sk193 2SA1174 2SB811 C 2785 2SD1020 2SD1021 2SC2785 M 2sc2785
Contextual Info: NEC e le c tro n device S S T DESCRIPTION M 0 L Q TRANSISTOR SERIES T h e SST Sm all Size T ra n s fe r M O L D T R A N S IS T O R PACKAGE DIMENSIONS S E R IE S are designed fo r h ig h d e n s ity assem bly o f e q u ip ­ in m illim e te rs m e n t, and these are ve ry su ita b le fo r m in im iz in g and

transistor tt 2222

Abstract: transistor L6 TT 2222 npn BLY89C IEC134 transistor K 1096 33F2
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D • bbSS'ISl D O S A G E A 2 flfc> W A P X BLY89C V.H.F. POWER TRANSISTOR N-P-N s ilic o n planar e p ita xia l tra n sisto r intended fo r use in class-A, B and C operated m obile, in d u stria l and m ilita ry tra n sm itte rs w ith a n om inal su p p ly voltage o f 13,5 V . T he tra n sisto r is resistance stabilized

Contextual Info: MITSUBISHI TRANSISTOR M ODULES QM50DY-24B M EDIUM POWER SWITCHING USE j INSULATED TYPE f QM50DY-24B APPLICATION Inverters, Servo drives, UPS, DC m otor controllers, NC equipm ent, W elders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm \ T ! 1 Tab#110. t= 0 5