TRANSISTOR SU 110 Search Results

Contextual Info: S AM SU N G SEMICONDUCTOR INC BCW32 1ME D 7^4145 000?a0b | NPN EPITAXIAL SILICON TRANSISTOR .T-23- I e! GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

ST T8 3580

Abstract: ST T8 3560 2SC5436 st zo 607 ce 2826 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ULTRA SU PER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: T Y P.)

Contextual Info: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

3 pin mini mold transistor

Abstract: R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2sc4226 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor
Contextual Info: DATA SHEET - SILICON TRANSISTOR 2SC4226 H IG H FREQ UENC Y LOW NO ISE A M P L IF IE R NPN SILICO N EPITAXIAL TR A N S IS T O R SU PE R M INI M O LD DESCRIPTION

RO SOT23-5

Contextual Info: ADVANCE INFORMATION A1/XIA1 All Inform ation in this d a ta sheet is prelim inary a nd su b je c t to change. a/97 Low-Noise9 Low-Dropout, 150mA Linear Regulators in SOT-23 T he M A X 8 8 6 7 /M A X 8 8 6 8 u se an in te rn a l P -ch a n n e l MOSFET pass transistor, w hich keeps the su p p ly cu r­

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)

DDS-60

Abstract: NCQ1004 RL 50B
Contextual Info: NCQ1004 N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY Su r fa c e M o u n t Q u a d • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW Rds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMITS 60 ±20 0.46 0.26 ±2 TBD TBD TBD

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

L146 IC

Abstract: l146 ld3p
Contextual Info: O rder this data sheet by BUL146/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL146 BUL146F Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices N PN Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p licatio n s The BUL146/BUL146F have an applications specific state-of-the-art die designed for

2N7073

Contextual Info: SILICONIX INC 33E » f i r Si fieo n ix • 0854735 001L.D52 ö ISIX 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 'TAr Id (A) 400 0.55 9.0 1 DRAIN 2 SOURCE 3 GATE Case Isolated

so C T Q 150

Abstract: 2N7077 JIS D 4215
Contextual Info: c r S ic a n ix 2N7077 J U r in c o rp o ra te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 400 r,w (A) 0.30 15 •d 1 DRAIN 2 SO U RCE 3 GATE 1 2 3 C ase Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: MITSUBISHI TRANSISTOR M ODULES QM50DY-24B M EDIUM POWER SWITCHING USE j INSULATED TYPE f QM50DY-24B APPLICATION Inverters, Servo drives, UPS, DC m otor controllers, NC equipm ent, W elders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm \ T ! 1 Tab#110. t= 0 5

A1T TRANSISTOR

Abstract: TRANSISTOR A1t A1T -13 TRANSISTOR transistor A1t 02
Contextual Info: That HPAEW LETT WLEM CK A RD High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light

Contextual Info: KSC1730 NPN EPITAXIAL SILICON TRANSISTOR TV VHF, UHF TUNER OSCILLATOR TO-92 • High Current Gain Bandwidth Product fT=1100MHz Typ • Output Capacitance Cob=1.5pF (Max) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Colloctor-Base Voltage Collector-Emitter \foltage

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

TH 2190 Transistor

Contextual Info: DG17Eôb E5b • MITSUBISHI RF POWER MODULE M57791 890-915MHz, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm P IN : P in : RF IN P U T V c c i : 1 s t. D C S U P P L Y ®VCC2 : 2nd. D C S U P P L Y ®VCC3 : 3rd. D C S U P P L Y ® Po : RF

TRANSISTOR 8040

Abstract: PPCP transistor su 110 transistor DJ marking
Contextual Info: Proximity Sensors Inductive ABS Housing Types DJ, Ø 50, Ø 77 and EI, Ø 77 • ABS housing, Ø 50 mm, Ø 77 mm • Sensing distance: 25 to 40 mm • Power supply: 8.2 VDC Namur 24 VDC • Output: Namur (DIN 19234) Transistor NPN, make switching (DJ 25 E)

PPCP

Abstract: transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk
Contextual Info: Proximity Sensors Inductive ABS Housing Types DJ, Ø 77 and EI, Ø 77 • ABS housing, Ø 77 mm • Sensing distance: 40 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: Namur (DIN 19234) Transistor NPN or PNP, make or break switching • Protection: Reverse polarity

transistor B 764

Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
Contextual Info: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

LB 122 transistor

Abstract: 2N2907A surface mount 2N2907A HCT2907A JAN2N2907A ma131
Contextual Info: OPTEK TEC H NO LO GY INC 4flE » • L^SSaO 000145 1 110 ■ Product Bulletin OTK _ £>j OPTEK M a y 1989 Surface Mount PNP General Purpose Transistor Type HCT2907A Features T 2/7 -Q°i Absolute Maximum Ratings TA = 25°C unless otherwise noted) • Surface mountable on ceramic or printed

Contextual Info: Data Sheet H W 3B 55B 3 0 0 V In pu t M axi Family DC-DC Converter Module Features • • • • • • • • • • • DC input range: 180 - 375V Input surge withstand: 400V for 100ms DC output: 2V - 48V P rogram m able output: lO to 110% Regulation: ±0.2% no load to full load

Contextual Info: • b S M 'ìflE T 0017114 lfll MITSUBISHI RF POWER MODULE ■ M57706L 135-145MHZ, 12.5V, 8W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm —lhj ^ >—II— PIN : Pin : RF INPUT ®VCC 1 @VCC2 ®PO ®GND : : : : —II—® 1st. DC SUPPLY