TRANSISTOR SU 110 Search Results

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

ST T8 3580

Abstract: ST T8 3560 2SC5436 st zo 607 ce 2826 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ULTRA SU PER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: T Y P.)

Contextual Info: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)

DDS-60

Abstract: NCQ1004 RL 50B
Contextual Info: NCQ1004 N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY Su r fa c e M o u n t Q u a d • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW Rds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMITS 60 ±20 0.46 0.26 ±2 TBD TBD TBD

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

2N7073

Contextual Info: SILICONIX INC 33E » f i r Si fieo n ix • 0854735 001L.D52 ö ISIX 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 'TAr Id (A) 400 0.55 9.0 1 DRAIN 2 SOURCE 3 GATE Case Isolated

Contextual Info: MITSUBISHI TRANSISTOR M ODULES QM50DY-24B M EDIUM POWER SWITCHING USE j INSULATED TYPE f QM50DY-24B APPLICATION Inverters, Servo drives, UPS, DC m otor controllers, NC equipm ent, W elders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm \ T ! 1 Tab#110. t= 0 5

transistor JE 1090

Abstract: photodiode for CD rw
Contextual Info: W fip l H E W L E T T m Lftm P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject

TH 2190 Transistor

Contextual Info: DG17Eôb E5b • MITSUBISHI RF POWER MODULE M57791 890-915MHz, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm P IN : P in : RF IN P U T V c c i : 1 s t. D C S U P P L Y ®VCC2 : 2nd. D C S U P P L Y ®VCC3 : 3rd. D C S U P P L Y ® Po : RF

TRANSISTOR 8040

Abstract: PPCP transistor su 110 transistor DJ marking
Contextual Info: Proximity Sensors Inductive ABS Housing Types DJ, Ø 50, Ø 77 and EI, Ø 77 • ABS housing, Ø 50 mm, Ø 77 mm • Sensing distance: 25 to 40 mm • Power supply: 8.2 VDC Namur 24 VDC • Output: Namur (DIN 19234) Transistor NPN, make switching (DJ 25 E)

transistor B 764

Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
Contextual Info: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

LB 122 transistor

Abstract: 2N2907A surface mount 2N2907A HCT2907A JAN2N2907A ma131
Contextual Info: OPTEK TEC H NO LO GY INC 4flE » • L^SSaO 000145 1 110 ■ Product Bulletin OTK _ £>j OPTEK M a y 1989 Surface Mount PNP General Purpose Transistor Type HCT2907A Features T 2/7 -Q°i Absolute Maximum Ratings TA = 25°C unless otherwise noted) • Surface mountable on ceramic or printed

transistor BU 102

Abstract: bk 101 transistor SS TRANSISTOR DIN19234
Contextual Info: Proximity Sensors Inductive ABS Housing Type DU, Fork-shaped • Fork-shaped ABS housing • Slot sizes: 3.5, 5, 6, 10 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: NAMUR (DIN 19234) Transistor NPN, make switching • Protection: Reverse polarity

DR40PPO

Abstract: SS TRANSISTOR DR RELAYS
Contextual Info: Proximity Sensors Capacitive ABS Housing Type DR 40, Ø 77 • Ø 77 mm ABS housing • Adjustable sensing distance: 10 to 40 mm • Power supply: 10 to 40 VDC • Output: Transistor NPN/PNP, make switching • Protection: Short-circuit and reverse polarity

MARKING R59

Contextual Info: KSR2109 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, Driver C ircuit • B uilt in bias R esistor (R =4.7Ki2) • C om plem ent to K S R 1109 ABSOLUTE MAXIMUM RATINGS (T a=25°C)

ge-20 transistor

Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
Contextual Info: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching

A 1015GR

Abstract: 1015gr SA 1015GR
Contextual Info: IF DETECT ICs IF DETECTION 1C FOR PAG ER FEATURES • RSSI fun ctio n To p revent in p u t overload, RSSI o u tp u t controls RF atte n u ator • Built-in lo w pass filter LPF and w a ve fo rm sh a p in g circuit e n ab le the extraction o f FSK sign a ls from voice signal

"tape reader"

Abstract: ZM111 ZM100 ZM110 ZMA7130 ZMA760 ZMA9130 ZMA960 ZME60 ZMX130
Contextual Info: OPTO-ELECTRONICS Photo Transistors/Diodes M axim um Ratings Type No. VcBO volts v CEO (volts) v EBO (voltsï •c m (amp.) (rnW) 35 35 35 35 35 35 50 10 10 10 6 0 *2 5 0 -2 5 0 -2 5 0 -2 5 200 200 200 200 ZM 100 ZM 110 ZM111 ZM X130 P to t Characteristics

LAE66A3

Abstract: dissipator LA000A3 LA000A3U
Contextual Info: Ecr,m H H H H H n H H V HEATDISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS LA-A3 Series IAE66A3CB W/TIP-29C TO-220 TRANSISTOR 110 D E S C R IP T IO N b 10 0 90 80 OF CURVES / I 1 / t> / / / //// /y /y /y y /t / ¥ V 1 2 / y / y S y y i A* N .C . Horix, D evice

transistor BF 451

Abstract: transistor BLC
Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 4 2 5 1 U nit in mm TV TUNER, VHF O SCILLATO R APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent

TRANSISTOR k 744

Abstract: BUX24 BUX 24 Transistor 744 transistor et 460
Contextual Info: *B U X 2 4 NPN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M ESA T R A N S IS T O R S IL IC IU M NPN, M E S A T R IP L E D IF F U S E ^Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im