TRANSISTOR ST2 Search Results

st2222a

Contextual Info: Central Semiconductor Corp. CM ST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general

2SC1213

Contextual Info: 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

Contextual Info: 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

ST2SC

Abstract: 2SC1213 transistor 2SA673 2SA673 2SA673A 2SC1213A ST2SA673
Contextual Info: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

ST2SC

Abstract: 2SC1213 st 120 transistor transistor 2SA673 2SA673 2SA673A 2SC1213A TRANSISTOR 2Sc1213a transistor 2sc1213 st2sa673
Contextual Info: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

ST2SC

Abstract: 2SC1213 2SC1213A st 120 transistor transistor 2sc1213 2sc1213 transistor ST-2Sc transistor 2SA673 2SA673 2SA673A
Contextual Info: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

ST2SC

Abstract: 2SC1213 2sc1213 TRANSISTOR equivalent transistor 2SA673 2SA673 2SC1213A TRANSISTOR 2Sc1213a 2SA673A transistor 2sc1213
Contextual Info: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

Contextual Info: Central semiconductor Corp. CM ST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The C EN TR A L SEM ICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general

DK 53 code transistor

Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS

CMST2222A

Contextual Info: Central" Sem iconductor Corp. CMST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: mmmn mini The CEN TRAL S E M IC O N D U C T O R CM ST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount

ST2907A

Contextual Info: Central Sem iconductor Corp. CM ST2907A SUPER-MINI PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M ST2907A type is an P N P silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mlni surface mount

xl 6009

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 BFT92W transistor Bft92 NT 407 F power transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES

BLV935

Abstract: ferroxcube 4322 ferroxcube tx
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile

2222 031 capacitor philips 2222 424

Abstract: 2222 031 capacitor philips BLF247B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain

2108 npn transistor

Abstract: Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PUMX1 Dual NPN transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual NPN transistor PUMX1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70

xl 6009

Abstract: MLC660 MLC662 L6 PHILIPS 4894 BLV910
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and

film dielectric trimmer PTFE

Abstract: 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV934 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and

"Dual PNP Transistor"

Abstract: Dual PNP Transistor 301 marking code PNP transistor philips 23 BP317 SC70-6 12NC philips PUMT1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PUMT1 Dual PNP transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual PNP transistor PUMT1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70

B.A date sheet karachi

Abstract: BF547W marking code e2 m1b marking BF547 SCD31
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

c39 transistor

Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,

7281660

Abstract: BU506DF
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU506DF High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.

M 9639 transistor

Abstract: application IC 7411 SiS 486
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage